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Volume 23
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10.3390/s23136225
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Article

A Comprehensive Characterization of the TI-LGAD Technology

by
Matias Senger
1,*,
Anna Macchiolo
1,
Ben Kilminster
1,
Giovanni Paternoster
2,
Matteo Centis Vignali
2 and
Giacomo Borghi
3
1
Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland
2
Fondazione Bruno Kessler (FBK), 38123 Trento, Italy
3
Campus Leonardo, Politecnico di Milano, 20133 Milan, Italy
*
Author to whom correspondence should be addressed.
Sensors 2023, 23(13), 6225; https://doi.org/10.3390/s23136225
Submission received: 2 June 2023 / Revised: 30 June 2023 / Accepted: 5 July 2023 / Published: 7 July 2023
(This article belongs to the Special Issue Radiation Sensors and Detectors: Materials, Principles and Applications)
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Abstract

Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or fill factor is not sufficient for small pixel sizes. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. In the TI-LGAD process, the p-stop termination structure, typical of LGADs, is replaced by isolating trenches etched in the silicon itself. This modification substantially reduces the size of the no-gain region, thus enabling the implementation of small pixels with an adequate fill factor value. In this article, a systematic characterization of the TI-RD50 production, the first of its kind entirely dedicated to the TI-LGAD technology, is presented. Designs are ranked according to their measured inter-pixel distance, and the time resolution is compared against the regular LGAD technology.
Keywords: TI-LGAD; LGAD; 4D-tracking; time resolution; space resolution; 4D-pixels TI-LGAD; LGAD; 4D-tracking; time resolution; space resolution; 4D-pixels
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MDPI and ACS Style

Senger, M.; Macchiolo, A.; Kilminster, B.; Paternoster, G.; Centis Vignali, M.; Borghi, G. A Comprehensive Characterization of the TI-LGAD Technology. Sensors 2023, 23, 6225. https://doi.org/10.3390/s23136225

AMA Style

Senger M, Macchiolo A, Kilminster B, Paternoster G, Centis Vignali M, Borghi G. A Comprehensive Characterization of the TI-LGAD Technology. Sensors. 2023; 23(13):6225. https://doi.org/10.3390/s23136225

Chicago/Turabian Style

Senger, Matias, Anna Macchiolo, Ben Kilminster, Giovanni Paternoster, Matteo Centis Vignali, and Giacomo Borghi. 2023. "A Comprehensive Characterization of the TI-LGAD Technology" Sensors 23, no. 13: 6225. https://doi.org/10.3390/s23136225

APA Style

Senger, M., Macchiolo, A., Kilminster, B., Paternoster, G., Centis Vignali, M., & Borghi, G. (2023). A Comprehensive Characterization of the TI-LGAD Technology. Sensors, 23(13), 6225. https://doi.org/10.3390/s23136225

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