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Open AccessArticle

Thin Film Encapsulation for RF MEMS in 5G and Modern Telecommunication Systems

1
IMM-CNR, Institute for Microelectronics and Microsystems, National Research Council, Via Monteroni, 73100 Lecce, Italy
2
CMM-FBK, Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo – Trento, Italy
*
Author to whom correspondence should be addressed.
Sensors 2020, 20(7), 2133; https://doi.org/10.3390/s20072133
Received: 27 February 2020 / Revised: 21 March 2020 / Accepted: 2 April 2020 / Published: 10 April 2020
(This article belongs to the Special Issue RF-MEMS Solutions for Advanced Passive Components)
In this work, SiNx/a-Si/SiNx caps on conductive coplanar waveguides (CPWs) are proposed for thin film encapsulation of radio-frequency microelectromechanical systems (RF MEMS), in view of the application of these devices in fifth generation (5G) and modern telecommunication systems. Simplification and cost reduction of the fabrication process were obtained, using two etching processes in the same barrel chamber to create a matrix of holes through the capping layer and to remove the sacrificial layer under the cap. Encapsulating layers with etch holes of different size and density were fabricated to evaluate the removal of the sacrificial layer as a function of the percentage of the cap perforated area. Barrel etching process parameters also varied. Finally, a full three-dimensional finite element method-based simulation model was developed to predict the impact of fabricated thin film encapsulating caps on RF performance of CPWs. View Full-Text
Keywords: 5G; RF MEMS; thin film encapsulation; silicon nitride; oxygen plasma etching 5G; RF MEMS; thin film encapsulation; silicon nitride; oxygen plasma etching
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MDPI and ACS Style

Persano, A.; Quaranta, F.; Taurino, A.; Siciliano, P.A.; Iannacci, J. Thin Film Encapsulation for RF MEMS in 5G and Modern Telecommunication Systems. Sensors 2020, 20, 2133.

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