Next Article in Journal / Special Issue
Towards Integrated Mid-Infrared Gas Sensors
Previous Article in Journal
SPS and DPS: Two New Grid-Based Source Location Privacy Protection Schemes in Wireless Sensor Networks
Previous Article in Special Issue
Sensitivity Enhancement of Silicon-on-Insulator CMOS MEMS Thermal Hot-Film Flow Sensors by Minimizing Membrane Conductive Heat Losses
Open AccessArticle

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

SUMCO Corporation, 1-52 Kubara, Yamashiro-cho, Imari-shi, Saga 849-4256, Japan
*
Author to whom correspondence should be addressed.
Sensors 2019, 19(9), 2073; https://doi.org/10.3390/s19092073
Received: 27 March 2019 / Revised: 24 April 2019 / Accepted: 1 May 2019 / Published: 4 May 2019
(This article belongs to the Special Issue Semiconductor and CMOS-Based Sensors for Environmental Monitoring)
We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors. View Full-Text
Keywords: gettering; CMOS image sensor; metal impurity; white spot defects; dark current; silicon wafer; dark current spectroscopy gettering; CMOS image sensor; metal impurity; white spot defects; dark current; silicon wafer; dark current spectroscopy
Show Figures

Figure 1

MDPI and ACS Style

Kurita, K.; Kadono, T.; Shigematsu, S.; Hirose, R.; Okuyama, R.; Onaka-Masada, A.; Okuda, H.; Koga, Y. Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors. Sensors 2019, 19, 2073.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop