Article Versions Notes

Kurita K, Kadono T, Shigematsu S, Hirose R, Okuyama R, Onaka-Masada A, Okuda H, Koga Y. Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors. Sensors. 2019; 19(9):2073. https://doi.org/10.3390/s19092073

Kurita, Kazunari, Takeshi Kadono, Satoshi Shigematsu, Ryo Hirose, Ryosuke Okuyama, Ayumi Onaka-Masada, Hidehiko Okuda, and Yoshihiro Koga. 2019. "Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors" Sensors 19, no. 9: 2073. https://doi.org/10.3390/s19092073

Kurita, K., Kadono, T., Shigematsu, S., Hirose, R., Okuyama, R., Onaka-Masada, A., Okuda, H., & Koga, Y. (2019). Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors. Sensors, 19(9), 2073. https://doi.org/10.3390/s19092073