Article Versions Notes

Kuo W-C, Sarangadharan I, Pulikkathodi AK, Chen P-H, Wang S-L, Wu C-R, Wang Y-L. Investigation of Electrical Stability and Sensitivity of Electric Double Layer Gated Field-Effect Transistors (FETs) for miRNA Detection. Sensors. 2019; 19(7):1484. https://doi.org/10.3390/s19071484

Kuo, Wen-Che, Indu Sarangadharan, Anil Kumar Pulikkathodi, Po-Hsuan Chen, Shin-Li Wang, Chang-Run Wu, and Yu-Lin Wang. 2019. "Investigation of Electrical Stability and Sensitivity of Electric Double Layer Gated Field-Effect Transistors (FETs) for miRNA Detection" Sensors 19, no. 7: 1484. https://doi.org/10.3390/s19071484

Kuo, W.-C., Sarangadharan, I., Pulikkathodi, A. K., Chen, P.-H., Wang, S.-L., Wu, C.-R., & Wang, Y.-L. (2019). Investigation of Electrical Stability and Sensitivity of Electric Double Layer Gated Field-Effect Transistors (FETs) for miRNA Detection. Sensors, 19(7), 1484. https://doi.org/10.3390/s19071484