Quasi-static Analysis Based on an Equivalent Circuit Model for a CMOS Terahertz Plasmon Detector in the Subthreshold Region
.jpg)
Department of Electronic Engineering, Yeungnam University, Gyeongsan 38541, Korea
*
Author to whom correspondence should be addressed.
Sensors 2019, 19(7), 1508; https://doi.org/10.3390/s19071508
Received: 31 January 2019
/
Revised: 15 March 2019
/
Accepted: 26 March 2019
/
Published: 28 March 2019
(This article belongs to the Special Issue I3S 2018 Selected Papers)
An analytic method for a complementary metal-oxide-semiconductor (CMOS) terahertz plasmon detector operating in the subthreshold region is presented using the equivalent circuit model. With respect to design optimization of the detector, the signal transmission from the antenna port to the output of the detector is described by using the proposed circuit model, which does not include a complicated physical operating principle and mathematical expressions. Characteristics from the antenna port to the input gate node of the detector are analyzed through the superposition method by using the characteristic impedance of transmission lines. The superposition method shows that the effect of interconnection lines at the input is simplified with the optimum bias point. The characteristics of the plasmon detection are expressed by using small-signal analysis of the single transistor at the sub-threshold operation. The results of the small-signal analysis show that the unity gain preamplifier located between the detector core and the main amplifier can improve the detection performances such as the voltage responsivity and the noise equivalent power. The measurement results using the fabricated CMOS plasmon detector at 200 GHz suggest that the unity gain preamplifier improves the detector performances, which are the same results as we received from the proposed analytic method.
View Full-Text
Keywords:
equivalent circuit model; CMOS plasmon detector; terahertz detector; detector optimization; small-signal analysis; sub-threshold operation; quasi-static
▼
Show Figures
Figure 1
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
MDPI and ACS Style
Son, J.-H.; Yang, J.-R. Quasi-static Analysis Based on an Equivalent Circuit Model for a CMOS Terahertz Plasmon Detector in the Subthreshold Region. Sensors 2019, 19, 1508. https://doi.org/10.3390/s19071508
AMA Style
Son J-H, Yang J-R. Quasi-static Analysis Based on an Equivalent Circuit Model for a CMOS Terahertz Plasmon Detector in the Subthreshold Region. Sensors. 2019; 19(7):1508. https://doi.org/10.3390/s19071508
Chicago/Turabian StyleSon, Ju-Hee, and Jong-Ryul Yang. 2019. "Quasi-static Analysis Based on an Equivalent Circuit Model for a CMOS Terahertz Plasmon Detector in the Subthreshold Region" Sensors 19, no. 7: 1508. https://doi.org/10.3390/s19071508
Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.
