Palenskis, V.; Minkevičius, L.; Matukas, J.; Jokubauskis, D.; Pralgauskaitė, S.; Seliuta, D.; Čechavičius, B.; Butkutė, R.; Valušis, G.
InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions. Sensors 2018, 18, 3760.
https://doi.org/10.3390/s18113760
AMA Style
Palenskis V, Minkevičius L, Matukas J, Jokubauskis D, Pralgauskaitė S, Seliuta D, Čechavičius B, Butkutė R, Valušis G.
InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions. Sensors. 2018; 18(11):3760.
https://doi.org/10.3390/s18113760
Chicago/Turabian Style
Palenskis, Vilius, Linas Minkevičius, Jonas Matukas, Domas Jokubauskis, Sandra Pralgauskaitė, Dalius Seliuta, Bronislovas Čechavičius, Renata Butkutė, and Gintaras Valušis.
2018. "InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions" Sensors 18, no. 11: 3760.
https://doi.org/10.3390/s18113760
APA Style
Palenskis, V., Minkevičius, L., Matukas, J., Jokubauskis, D., Pralgauskaitė, S., Seliuta, D., Čechavičius, B., Butkutė, R., & Valušis, G.
(2018). InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions. Sensors, 18(11), 3760.
https://doi.org/10.3390/s18113760