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Sensors 2016, 16(4), 526;

The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
China Gas Turbine Establishment, Jiangyou 621703, China
Author to whom correspondence should be addressed.
Academic Editor: Stephane Evoy
Received: 26 January 2016 / Revised: 1 April 2016 / Accepted: 6 April 2016 / Published: 12 April 2016
(This article belongs to the Section Physical Sensors)
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We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5–3.5 μm. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient (k2) were determined from the measure S11 parameters. The Q-factor and k2 were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems. View Full-Text
Keywords: AlN film; TC4; surface acoustic wave; layered structure; simulation AlN film; TC4; surface acoustic wave; layered structure; simulation

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Shu, L.; Peng, B.; Li, C.; Gong, D.; Yang, Z.; Liu, X.; Zhang, W. The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures. Sensors 2016, 16, 526.

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