Sensors 2014, 14(2), 3493-3505; https://doi.org/10.3390/s140203493
RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System
1
Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia
2
Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, Kuala Lumpur 54100, Malaysia
3
MIMOS Berhad, Technology Park Malaysia, Kuala Lumpur 57000, Malaysia
*
Author to whom correspondence should be addressed.
Received: 2 December 2013 / Revised: 9 February 2014 / Accepted: 11 February 2014 / Published: 20 February 2014
(This article belongs to the Section Physical Sensors)
Abstract
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector. View Full-Text
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Mustafa, F.; Hashim, A.M. RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System. Sensors 2014, 14, 3493-3505.