Design and Implementation of a Micromechanical Silicon Resonant Accelerometer
AbstractThe micromechanical silicon resonant accelerometer has attracted considerable attention in the research and development of high-precision MEMS accelerometers because of its output of quasi-digital signals, high sensitivity, high resolution, wide dynamic range, anti-interference capacity and good stability. Because of the mismatching thermal expansion coefficients of silicon and glass, the micromechanical silicon resonant accelerometer based on the Silicon on Glass (SOG) technique is deeply affected by the temperature during the fabrication, packaging and use processes. The thermal stress caused by temperature changes directly affects the frequency output of the accelerometer. Based on the working principle of the micromechanical resonant accelerometer, a special accelerometer structure that reduces the temperature influence on the accelerometer is designed. The accelerometer can greatly reduce the thermal stress caused by high temperatures in the process of fabrication and packaging. Currently, the closed-loop drive circuit is devised based on a phase-locked loop. The unloaded resonant frequencies of the prototype of the micromechanical silicon resonant accelerometer are approximately 31.4 kHz and 31.5 kHz. The scale factor is 66.24003 Hz/g. The scale factor stability is 14.886 ppm, the scale factor repeatability is 23 ppm, the bias stability is 23 μg, the bias repeatability is 170 μg, and the bias temperature coefficient is 0.0734 Hz/°C. View Full-Text
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Huang, L.; Yang, H.; Gao, Y.; Zhao, L.; Liang, J. Design and Implementation of a Micromechanical Silicon Resonant Accelerometer. Sensors 2013, 13, 15785-15804.
Huang L, Yang H, Gao Y, Zhao L, Liang J. Design and Implementation of a Micromechanical Silicon Resonant Accelerometer. Sensors. 2013; 13(11):15785-15804.Chicago/Turabian Style
Huang, Libin; Yang, Hui; Gao, Yang; Zhao, Liye; Liang, Jinxing. 2013. "Design and Implementation of a Micromechanical Silicon Resonant Accelerometer." Sensors 13, no. 11: 15785-15804.