Next Article in Journal
Ge-Photodetectors for Si-Based Optoelectronic Integration
Next Article in Special Issue
Low-Dimensional Palladium Nanostructures for Fast and Reliable Hydrogen Gas Detection
Previous Article in Journal
Ultrasonic Sensors in Urban Traffic Driving-Aid Systems
Previous Article in Special Issue
Flame-Made Nb-Doped TiO2 Ethanol and Acetone Sensors
Open AccessReview

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Sensors 2011, 11(1), 674-695; https://doi.org/10.3390/s110100674
Received: 21 December 2010 / Accepted: 6 January 2011 / Published: 11 January 2011
(This article belongs to the Special Issue Gas Sensors - 2010)
In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V) characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations. View Full-Text
Keywords: GaN; AlGaN; Schottky barrier diodes; hydrogen sensors GaN; AlGaN; Schottky barrier diodes; hydrogen sensors
MDPI and ACS Style

Irokawa, Y. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces. Sensors 2011, 11, 674-695. https://doi.org/10.3390/s110100674

AMA Style

Irokawa Y. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces. Sensors. 2011; 11(1):674-695. https://doi.org/10.3390/s110100674

Chicago/Turabian Style

Irokawa, Yoshihiro. 2011. "Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces" Sensors 11, no. 1: 674-695. https://doi.org/10.3390/s110100674

Find Other Styles

Article Access Map by Country/Region

1
Only visits after 24 November 2015 are recorded.
Search more from Scilit
 
Search
Back to TopTop