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Keywords = two-photo-mask process

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16 pages, 5703 KiB  
Article
Document Image Shadow Removal Based on Illumination Correction Method
by Depeng Gao, Wenjie Liu, Shuxi Chen, Jianlin Qiu, Xiangxiang Mei and Bingshu Wang
Algorithms 2025, 18(8), 468; https://doi.org/10.3390/a18080468 - 26 Jul 2025
Viewed by 228
Abstract
Due to diverse lighting conditions and photo environments, shadows are almost ubiquitous in images, especially document images captured with mobile devices. Shadows not only seriously affect the visual quality and readability of a document but also significantly hinder image processing. Although shadow removal [...] Read more.
Due to diverse lighting conditions and photo environments, shadows are almost ubiquitous in images, especially document images captured with mobile devices. Shadows not only seriously affect the visual quality and readability of a document but also significantly hinder image processing. Although shadow removal research has achieved good results in natural scenes, specific studies on document images are lacking. To effectively remove shadows in document images, the dark illumination correction network is proposed, which mainly consists of two modules: shadow detection and illumination correction. First, a simplified shadow-corrected attention block is designed to combine spatial and channel attention, which is used to extract the features, detect the shadow mask, and correct the illumination. Then, the shadow detection block detects shadow intensity and outputs a soft shadow mask to determine the probability of each pixel belonging to shadow. Lastly, the illumination correction block corrects dark illumination with a soft shadow mask and outputs a shadow-free document image. Our experiments on five datasets show that the proposed method achieved state-of-the-art results, proving the effectiveness of illumination correction. Full article
(This article belongs to the Section Combinatorial Optimization, Graph, and Network Algorithms)
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12 pages, 1913 KiB  
Article
Optimization of Bulk Heterojunction Organic Photovoltaics
by Alaa Y. Ali, Natalie P. Holmes, Nathan Cooling, John Holdsworth, Warwick Belcher, Paul Dastoor and Xiaojing Zhou
Coatings 2023, 13(7), 1293; https://doi.org/10.3390/coatings13071293 - 24 Jul 2023
Cited by 2 | Viewed by 2338
Abstract
The performance of poly(3-hexylthiophene) (P3HT): phenyl-C61-butyric acid methyl ester (PCBM) organic photovoltaic (OPV) devices was found to be strongly influenced by environmental during preparation, thermal annealing conditions, and the material blend composition. We optimized laboratory fabricated devices for these variables. Humidity [...] Read more.
The performance of poly(3-hexylthiophene) (P3HT): phenyl-C61-butyric acid methyl ester (PCBM) organic photovoltaic (OPV) devices was found to be strongly influenced by environmental during preparation, thermal annealing conditions, and the material blend composition. We optimized laboratory fabricated devices for these variables. Humidity during the fabrication process can cause electrode oxidation and photo-oxidation in the active layer of the OPV. Thermal annealing of the device structure modifies the morphology of the active layer, resulting in changes in material domain sizes and percolation pathways which can enhance the performance of devices. Thermal annealing of the blended organic materials in the active layer also leads to the growth of crystalline for P3HT domains due to a more arrangement packing of chains in the polymer. Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) acts as a hole transport layer in these P3HT:PCBM devices. Two commercially materials of PEDOT:PSS were utilizing in the optimization of the OPV in this research; high conductivity PEDOT:PSS-PH1000 and PEDOT:PSS-Al4083, which is specifically designed for OPV interfaces. It was demonstrated that OPVs were prepared with PEDOT:PSS-PH1000 have a less than the average performance of PEDOT:PSS-Al4083. The power conversion efficiency (PCE) decreased clearly with a reducing in masking area devices from 5 mm2 to 3.8 mm2 for OPVs based on PH1000 almost absolutely due to the reduced short circuit current (Jsc). This work provides a roadmap to understanding P3HT:PCBM OPV performance and outlines the preparation issues which need to be resolved for efficient device fabrication Full article
(This article belongs to the Special Issue Advanced Polymer and Thin Film for Sustainable Energy Harvesting)
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23 pages, 7459 KiB  
Article
Novel Techniques for Void Filling in Glacier Elevation Change Data Sets
by Thorsten Seehaus, Veniamin I. Morgenshtern, Fabian Hübner, Eberhard Bänsch and Matthias H. Braun
Remote Sens. 2020, 12(23), 3917; https://doi.org/10.3390/rs12233917 - 29 Nov 2020
Cited by 8 | Viewed by 4702
Abstract
The increasing availability of digital elevation models (DEMs) facilitates the monitoring of glacier mass balances on local and regional scales. Geodetic glacier mass balances are obtained by differentiating DEMs. However, these computations are usually affected by voids in the derived elevation change data [...] Read more.
The increasing availability of digital elevation models (DEMs) facilitates the monitoring of glacier mass balances on local and regional scales. Geodetic glacier mass balances are obtained by differentiating DEMs. However, these computations are usually affected by voids in the derived elevation change data sets. Different approaches, using spatial statistics or interpolation techniques, were developed to account for these voids in glacier mass balance estimations. In this study, we apply novel void filling techniques, which are typically used for the reconstruction and retouche of images and photos, for the first time on elevation change maps. We selected 6210 km2 of glacier area in southeast Alaska, USA, covered by two void-free DEMs as the study site to test different inpainting methods. Different artificially voided setups were generated using manually defined voids and a correlation mask based on stereoscopic processing of Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) acquisition. Three “novel” (Telea, Navier–Stokes and shearlet) as well as three “classical” (bilinear interpolation, local and global hypsometric methods) void filling approaches for glacier elevation data sets were implemented and evaluated. The hypsometric approaches showed, in general, the worst performance, leading to high average and local offsets. Telea and Navier–Stokes void filling showed an overall stable and reasonable quality. The best results are obtained for shearlet and bilinear void filling, if certain criteria are met. Considering also computational costs and feasibility, we recommend using the bilinear void filling method in glacier volume change analyses. Moreover, we propose and validate a formula to estimate the uncertainties caused by void filling in glacier volume change computations. The formula is transferable to other study sites, where no ground truth data on the void areas exist, and leads to higher accuracy of the error estimates on void-filled areas. In the spirit of reproducible research, we publish a software repository with the implementation of the novel void filling algorithms and the code reproducing the statistical analysis of the data, along with the data sets themselves. Full article
(This article belongs to the Special Issue Applications of Remote Sensing in Glaciology)
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10 pages, 895 KiB  
Article
Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process
by Ching-Lin Fan, Ming-Chi Shang, Bo-Jyun Li, Yu-Zuo Lin, Shea-Jue Wang, Win-Der Lee and Bohr-Ran Hung
Materials 2015, 8(4), 1704-1713; https://doi.org/10.3390/ma8041704 - 13 Apr 2015
Cited by 22 | Viewed by 10032
Abstract
This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer [...] Read more.
This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity. Full article
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8 pages, 1044 KiB  
Article
A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
by Ching-Lin Fan, Ming-Chi Shang, Bo-Jyun Li, Yu-Zuo Lin, Shea-Jue Wang and Win-Der Lee
Materials 2014, 7(8), 5761-5768; https://doi.org/10.3390/ma7085761 - 11 Aug 2014
Cited by 13 | Viewed by 12700
Abstract
Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off [...] Read more.
Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm2/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased. Full article
(This article belongs to the Special Issue Compound Semiconductor Materials 2014)
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20 pages, 1999 KiB  
Article
A Micro Dynamically Tuned Gyroscope with Adjustable Static Capacitance
by Dunzhu Xia, Cheng Yu and Lun Kong
Sensors 2013, 13(2), 2176-2195; https://doi.org/10.3390/s130202176 - 6 Feb 2013
Cited by 18 | Viewed by 8689
Abstract
This paper presents a novel micro dynamically tuned gyroscope (MDTG) with adjustable static capacitance. First, the principle of MDTG is theoretically analyzed. Next, some simulations under the optimized structure parameters are given as a reference for the mask design of the rotor wafer [...] Read more.
This paper presents a novel micro dynamically tuned gyroscope (MDTG) with adjustable static capacitance. First, the principle of MDTG is theoretically analyzed. Next, some simulations under the optimized structure parameters are given as a reference for the mask design of the rotor wafer and electrode plates. As two key components, the process flows of the rotor wafer and electrode plates are described in detail. All the scanning electron microscopy (SEM) photos show that the fabrication process is effective and optimized. Then, an assembly model is designed for the static capacitance adjustable MDTG, whose static capacitance can be changed by rotating the lower electrode plate support and substituting gasket rings of different thicknesses. Thus, the scale factor is easily changeable. Afterwards, the digitalized closed-loop measurement circuit is simulated. The discrete correction and decoupling modules are designed to make the closed-loop stable and cross-coupling effect small. The dual axis closed-loop system bandwidths can reach more than 60 Hz and the dual axis scale factors are completely symmetrical. All the simulation results demonstrate the proposed fabrication of the MDTG can meet the application requirements. Finally, the paper presents the test results of static and dynamic capacitance values which are consistent with the simulation values. Full article
(This article belongs to the Section Physical Sensors)
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