Search Results (103)

We describe the output characteristics of a compact, passively Q-switched, diode-end-pumped (Er/Yb):Glass laser operating in a multi-pulse burst mode. Such operation enables much higher optical efficiency and larger output of total energy than possible with conventional solitary pulse emissions. The laser generated a 15-pulse burst of pulses at 1.5 μm with a combined energy of 5.8 mJ. Measurements of pulse energies, spatial mode characteristics, output beam divergence, and impact of thermal effects in the (Er/Yb):Glass are described. These results are compared to predictions of a numerical simulation using a finite-difference beam propagation method (FD-BPM) that incorporates thermal effects caused by distributed local heating in the glass. We show good agreement between the measured and simulated laser output characteristics. Full article

Photodetectors are critical components in modern optoelectronic systems due to their extensive applications in information conversion and image storage. Selenium (Se), an element with a low melting point, a broad spectral response, and rapid response speed, exhibits a disadvantage of high optical reflectivity, which leads to a reduction in response. Spiro-MeOTAD, featuring controllable energy bands and facile processing, has its practical application limited by inadequate thermal and environmental stability. In this study, Spiro-MeOTAD-1 with enhanced stability was prepared through the optimization of dopants (Zn(TFSI)₂ and CNT:TiO₂) within Spiro-MeOTAD, to create a Se-F/Spiro-MeOTAD-1 heterojunction photodetector by subsequently compositing with selenium foam (Se-F). The self-powered device demonstrates exceptional photovoltaic performance within the wavelength range of 350–800 nm at 0 V bias, exhibiting a maximum responsivity of 108 mA W⁻¹, a switching ratio of 5 × 10³, a specific detectivity of 2.96 × 10¹² Jones, and a response time of 20 ms/50 ms. The device also demonstrates elevated environmental stability pretreatment at 140 °C following a one-month period. The photodetection stability of the Se-F/Spiro-MeOTAD-1 flexible PD was demonstrated by its capacity to retain 76.3% of its initial light current when subjected to 70 bending cycles at 30°. This finding further substantiates the photodetection stability of the material under various bending conditions. Further verification of the applicability of Spiro-MeOTAD-1 in Se-based devices establishes a novel paradigm for designing photodetectors with enhanced performance and stability. Full article

Vanadium dioxide (VO₂) is a well-known phase-change material that exhibits a thermally driven insulator-to-metal transition (IMT) near 68 °C, leading to significant changes in its electrical and optical properties. This transition is governed by structural modifications in the VO₂ crystal lattice, enabling dynamic control over absorption, reflection, and transmission. Despite its promising tunability, VO₂-based optical absorbers face challenges such as a narrow IMT temperature window, intrinsic optical losses, and fabrication complexities associated with multilayer designs. In this work, we propose and numerically investigate a single-layer VO₂-based optical absorber for the visible spectrum using full-wave electromagnetic simulations. The proposed absorber achieves nearly 95% absorption at 25 °C (insulating phase), which drops below 5% at 80 °C (metallic phase), demonstrating exceptional optical tunability. This behavior is attributed to VO₂’s high refractive index in the insulating state, which enhances resonant light trapping. Unlike conventional multilayer absorbers, our single-layer VO₂ design eliminates structural complexity, simplifying fabrication and reducing material costs. These findings highlight the potential of VO₂-based crystalline materials for tunable and energy-efficient optical absorption, making them suitable for adaptive optics, smart windows, and optical switching applications. The numerical results presented in this study contribute to the ongoing development of crystal-based phase-transition materials for next-generation reconfigurable photonic and optoelectronic devices. Full article

In this paper, we present the analysis of functional alloy samples containing metals aluminum (Al), copper (Cu), lead (Pb), silicon (Si), tin (Sn), and zinc (Zn) using a Q-switched Nd laser operating at a wavelength of 532 nm with a pulse duration of 5 ns. Nine pelletized alloy samples were prepared, each containing varying chemical concentrations (wt.%) of Al, Cu, Pb, Si, Sn, and Zn—elements commonly used in electrotechnical and thermal functional materials. The laser beam is focused on the target surface, and the resulting emission spectrum is captured within the temperature interval of $9.0\times {10}^3$ to $1.1\times {10}^4$ K using a set of compact Avantes spectrometers. Each spectrometer is equipped with a linear charged-coupled device (CCD) array set at a 2 μs gate delay for spectrum recording. The quantitative analysis was performed using calibration-free laser-induced breakdown spectroscopy (CF-LIBS) under the assumptions of optically thin plasma and self-absorption-free conditions, as well as local thermodynamic equilibrium (LTE). The net normalized integrated intensities of the selected emission lines were utilized for the analysis. The intensities were normalized by dividing the net integrated intensity of each line by that of the aluminum emission line (Al II) at 281.62 nm. The results obtained using CF-LIBS were compared with those from the laser ablation time-of-flight mass spectrometer (LA-TOF-MS), showing good agreement between the two techniques. Furthermore, a random forest technique (RFT) was employed using LIBS spectral data for sample classification. The RFT technique achieves the highest accuracy of ~98.89% using out-of-bag (OOB) estimation for grouping, while a 10-fold cross-validation technique, implemented for comparison, yields a mean accuracy of ~99.12%. The integrated use of LIBS, LA-TOF-MS, and machine learning (e.g., RFT) enables fast, preparation-free analysis and classification of functional metallic materials, highlighting the synergy between quantitative techniques and data-driven methods. Full article

WO₃ electrochromic films have emerged as potential candidates for smart windows due to their cost-effectiveness, fast switching speed, and strong chemical stability. However, the inherent contradiction between the high coloring efficiency of amorphous WO₃ and the cycling durability of crystalline WO₃ remains a critical challenge in practical applications. This study proposes an innovative heterostructure engineering strategy, achieving precise control of the amorphous/crystalline bilayer WO₃ heterointerface (148 nm a-WO₃/115 nm c-WO₃) for the first time through phase boundary regulation, using well-controlled magnetron sputtering and post-deposition thermal annealing processes. Multimodal characterization using XRD, XPS, and SEM indicates that the heterointerface optimizes performance through a dynamic charge transfer mechanism and structural synergistic effects: the optimized bilayer structure achieves 76.57% optical modulation (at 630 nm) under −1.0 V and maintains a ΔT retention rate of 45.02% after 600 cycles, significantly outperforming single amorphous (8.34%) and crystalline films (14.34%). XPS analysis reveals a dynamic equilibrium mechanism involving W⁵⁺/Li⁺ at the interface, and the Li⁺ diffusion coefficient (D₀ = 4.29 × 10⁻¹⁰ cm²/s) confirms that the amorphous layer dominates rapid ion transport, while the crystalline matrix enhances structural stability through its ordered crystalline structure. This study offers a new paradigm for balancing the efficiency and longevity of electrochromic devices, with the compatibility of magnetic sputtering promoting the industrialization process of large-area smart windows. Full article

Two-terminal optoelectronic synaptic devices based on ZnO nanoparticles (NPs) were fabricated to investigate the effects of thermal annealing control (200 °C–500 °C) in nitrogen and oxygen atmospheres on surface morphology, optical response, and synaptic functionality. Atomic force microscopy (AFM) analysis revealed improved grain growth and reduced surface roughness. At the same time, UV–visible spectroscopy and photoluminescence confirmed a blue shift in the absorption edge and enhanced near-band-edge emission, particularly in nitrogen-annealed devices due to increased oxygen vacancies. X-ray photoelectron spectroscopy (XPS) analysis of the O 1s spectra confirmed that oxygen vacancies were more pronounced in nitrogen-annealed devices than in oxygen-annealed ones at 500 °C. Optical resistive switching was observed, where 365 nm ultraviolet (UV) irradiation induced a transition from a high-resistance state (HRS) to a low-resistance state (LRS), attributed to electron–hole pair generation and oxygen desorption. The electrical reset process, achieved by applying −1.0 V to −5.0 V, restored the initial HRS, demonstrating stable switching behavior. Nitrogen-annealed devices with higher oxygen vacancies exhibited superior synaptic performance, including higher excitatory postsynaptic currents, stronger paired-pulse facilitation, and extended persistent photoconductivity (PPC) duration, enabling long-term memory retention. By systematically varying UV exposure time, intensity, pulse number, and frequency, ZnO NPs-based devices demonstrated the transition from short-term to long-term memory, mimicking biological synaptic behavior. Learning and forgetting simulations showed faster learning and slower decay in nitrogen-annealed devices, emphasizing their potential for next-generation neuromorphic computing and energy-efficient artificial synapses. Full article

Photonic integrated circuits (PICs) are crucial for advanced applications in telecommunications, quantum computing, and biomedical fields. Silicon nitride (SiN)-based platforms are promising for PICs due to their transparency, low optical loss, and thermal stability. However, achieving efficient thermo-optic (TO) modulation on SiN remains challenging due to limited reconfigurability and high power requirements. This study aims to optimize TO phase shifters on SiN platforms to enhance power efficiency, reduce device footprint, and minimize insertion losses. We introduce a CMOS-compatible plasmo-photonic TO phase shifter using a SiOC material layer with a high TO coefficient combined with aluminum heaters on a SiN platform. We evaluate four interferometer architectures—symmetric and asymmetric Mach–Zehnder Interferometers (MZIs), an MZI with a ring resonator, and a single-arm design—through opto-thermal simulations to refine performance across power, losses, footprint, and switching speed metrics. The asymmetric MZI with ring resonator (A-MZI-RR) architecture demonstrated superior performance, with minimal power consumption (1.6 mW), low insertion loss (2.8 dB), and reduced length (14.4 μm), showing a favorable figure of merit compared to existing solutions. The optimized SiN-based TO switches show enhanced efficiency and compactness, supporting their potential for scalable, energy-efficient PICs suited to high-performance photonic applications. Full article

Direct wide-bandgap III-Ns and II-Os have recently gained considerable attention due to their unique electrical and chemical properties. These novel semiconductors are being explored to design short-wavelength light-emitting diodes, sensors/biosensors, photodetectors for integration into flexible transparent nanoelectronics/photonics to achieve high-power radio-frequency modules, and heat-resistant optical switches for communication networks. Knowledge of the elastic constants structural and mechanical properties has played crucial roles both in the basic understanding and assessing materials’ use in thermal management applications. In the absence of experimental structural, elastic constants, and mechanical traits, many theoretical simulations have yielded inconsistent results. This work aims to investigate the basic characteristics of tetrahedrally coordinated, partially ionic BeO, MgO, ZnO, and CdO, and partially covalent BN, AlN, GaN, and InN materials. By incorporating a bond-orbital and a valance force field model, we have reported comparative results of our systematic calculations for the bond length $\mathrm{d}$, bond polarity ${\mathsf{\alpha }}_{\mathrm{P}}$, covalency ${\mathsf{\alpha }}_{\mathrm{C}}$, bulk modulus $\mathrm{B}$, elastic stiffness $\mathrm{C}(={\displaystyle \frac{\left[{\mathrm{c}}_{11}-{\mathrm{c}}_{12}\right]}{2}})$, bond-stretching $\mathsf{\alpha }$ and bond-bending $\mathsf{\beta }$ force constants, Kleinmann’s internal displacement ζ, and Born’s transverse effective charge ${\mathrm{e}}_{\mathrm{T}}^{*}$. Correlations between $\mathrm{C}/\mathrm{B}$, $\mathsf{\beta }$/$\mathsf{\alpha }$, ${\displaystyle \frac{{\mathrm{c}}_{12}}{{\mathrm{c}}_{11}}},$ ζ, $\mathrm{a}\mathrm{n}\mathrm{d}$ ${\mathsf{\alpha }}_{\mathrm{C}}$revealed valuable trends of structural, elastic, and bonding characteristics. The study noticed AlN and GaN (MgO and ZnO) showing nearly comparable features, while BN (BeO) is much harder compared to InN (CdO) material, with drastically softer bonding. Calculations of microhardness $\mathrm{H}$, shear modulus $\mathrm{G},$ and Young’s modulus $\mathrm{Y}$ have predicted BN (BeO) satisfying a criterion of super hardness. III-Ns (II-Os) could be vital in electronics, aerospace, defense, nuclear reactors, and automotive industries, providing integrity and performance at high temperature in high-power applications, ranging from heat sinks to electronic substrates to insulators in high-power devices. Full article

This paper presents an innovative approach to modelling the fiber optic fusion effect using the Network Simulation Method (NSM). An analogy between the heat conduction equations and electrical circuits is developed, allowing a complex physical problem to be transformed into an equivalent electrical system. Using NGSpice, thermal interactions in an anisotropic optical fiber under high optical power conditions are simulated. The methodology addresses the distribution of the temperature in the system, considering thermal variations and temperature-dependent material characteristics. In an NSM equivalent circuit, the effect of applying the spark is modelled by a switch that switches the spark-generating source on and off. It can be seen that temperature variation with time, or temperature rise rate (K/s), depends on the applied power. In addition, the mathematical method of nondimensionalization is used to study the real influence of each parameter of the problem on the solution and the relationship between the variables. Four optical fiber cases are analysed, each characterised by different areas and refractive indices, revealing how these variables affect the propagation of the melting phenomenon. The results highlight the effectiveness of the NSM in solving nonlinear and coupled problems in thermal engineering, providing a solid framework for future research in the optimisation of optical communication systems. Full article

Using liquid crystals in near-infrared applications suffers from effects related to processes like parasitic absorption and high sensitivity to UV-light exposure. One way of managing these disadvantages is to use deuterated systems. The combined ¹H and ²H nuclear magnetic resonance relaxometry method (FFC NMR), dielectric spectroscopy (DS), optical microscopy (POM), and differential scanning calorimetry (DSC) approach was applied to investigate the influence of selective deuteration on the molecular dynamics, thermal properties, self-organization, and electric-field responsiveness to a 4′-pentyl-4-biphenylcarbonitrile (5CB) liquid crystal. The NMR relaxation dispersion (NMRD) profiles were analyzed using theoretical models for the description of dynamics processes in different mesophases. Obtained optical textures of selectively deuterated 5CB showed the occurrence of the domain structure close to the I/N phase transition. The dielectric measurements showed a substantial difference in switching fields between fully protonated/deuterated 5CB and selectively deuterated molecules. The DSC thermograms showed a more complex phase transition sequence for partially deuterated 5CB with respect to fully protonated/deuterated molecules. Full article

The geometric shape, symmetry, and topology of colloidal particles often allow for controlling colloidal phase behavior and physical properties of these soft matter systems. In liquid crystalline dispersions, colloidal particles with low symmetry and nontrivial topology of surface confinement are of particular interest, including surfaces shaped as handlebodies, spirals, knots, multi-component links, and so on. These types of colloidal surfaces induce topologically nontrivial three-dimensional director field configurations and topological defects. Director switching by electric fields, laser tweezing of defects, and local photo-thermal melting of the liquid crystal host medium promote transformations among many stable and metastable particle-induced director configurations that can be revealed by means of direct label-free three-dimensional nonlinear optical imaging. The interplay between topologies of colloidal surfaces, director fields, and defects is found to show a number of unexpected features, such as knotting and linking of line defects, often uniquely arising from the nonpolar nature of the nematic director field. This review article highlights fascinating examples of new physical behavior arising from the interplay of nematic molecular order and both chiral symmetry and topology of colloidal inclusions within the nematic host. Furthermore, the article concludes with a brief discussion of how these findings may lay the groundwork for new types of topology-dictated self-assembly in soft condensed matter leading to novel mesostructured composite materials, as well as for experimental insights into the pure-math aspects of low-dimensional topology. Full article

We propose and experimentally demonstrate an efficient on-chip thermo-optic (TO) switch based on a photonic crystal nanobeam cavity (PCNC) and a hydrogen-doped indium oxide (IHO) microheater. The small mode volume of the PCNC and the close-range heating through the transparent conductive oxide IHO greatly enhance the coupling between the thermal field and the optical field, increasing the TO tuning efficiency. The experimental results show that the TO tuning efficiency can reach 1.326 nm/mW. And the rise time and fall time are measured to be 3.90 and 2.65 μs, respectively. In addition, compared with the conventional metal microheater, the measured extinction ratios of the switches are close (25.8 dB and 27.6 dB, respectively), indicating that the IHO microheater does not introduce obvious insertion loss. Our demonstration showcases the immense potential of this TO switch as a unit device for on-chip large-scale integrated arrays. Full article

The utilization of optical antennas for active control of far-field radiation at the subwavelength scale is crucial in various scientific and technological applications. We propose a thermally tunable disk design of indium tin oxide (ITO) and aluminum gallium nitride (${\mathrm{Al}}_{0.18}{\mathrm{Ga}}_{0.82}\mathrm{As}$), enabling a switch between absorption and scattering. Furthermore, the control of far-field radiation pattern can be easily realized by combining ITO and ${\mathrm{Al}}_{0.18}{\mathrm{Ga}}_{0.82}\mathrm{As}$ to enhance or suppress emission. Our results demonstrate that hybrid structures can be dynamically tuned with temperature variations. In the proposed design, a frequency is achieved at the wavelength of 1240 nm. The thermal tunability of hybrid structures introduces new multifunctional possibilities for light manipulation, thereby enhancing the potential applications of new devices in the near-infrared range. Full article

For the first time, the Z₁ and Z₂ defects with closely spaced energy levels having negative-U properties are revealed in high-purity semi-insulating (HPSI) 4H-SiC using Laplace-transform photoinduced transient spectroscopy (LPITS). In this material, after switching off the optical trap-filling pulse, either the one-electron or the two-electron thermally stimulated emission from these defects is observed at temperatures 300–400 K. It is found that the former corresponds to the Z₁^0/+ and Z₂^0/+ transitions with the activation energies of 514 and 432 meV, respectively, and the latter is associated with the Z₁^−/+ and Z₂^−/+ transitions with the activation energies of 592 meV and 650 meV, respectively. The Z₁ and Z₂ defect concentrations are found to increase from 2.1 × 10¹³ to 2.2 × 10¹⁴ cm⁻³ and from 1.2 × 10¹³ to 2.7 × 10¹⁴ cm⁻³, respectively, after the heat treatment of HPSI 4H-SiC samples at 1400 °C for 3 h in Ar ambience. Using the electrical trap-filling pulse, only the thermal two-electron emission from each defect was observed in the epitaxial 4H-SiC through Laplace-transform deep level transient spectroscopy (LDLTS). The activation energies for this process from the Z₁ and Z₂ defects are 587 and 645 meV, respectively, and the defect concentrations are found to be 6.03 × 10¹¹ and 2.64 × 10¹² cm⁻³, respectively. It is postulated that the Z₁ and Z₂ defects are the nearest-neighbor divacancies involving the carbon and silicon vacancies located at mixed, hexagonal (h), and quasi-cubic (k) lattice sites. Full article

In this study, a KrF excimer laser with a high-absorption coefficient in metal oxide films and a wavelength of 248 nm was selected for the post-processing of a film and metal oxide thin film transistor (MOTFT). Due to the poor negative bias illumination stress (NBIS) stability of indium gallium zinc oxide thin film transistor (IGZO-TFT) devices, terbium-doped Tb:In₂O₃ material was selected as the target of this study. The XPS test revealed the presence of both Tb³⁺ and Tb⁴⁺ ions in the Tb:In₂O₃ film. It was hypothesized that the peak of the laser thermal effect was reduced and the action time was prolonged by the f-f jump of Tb³⁺ ions and the C-T jump of Tb⁴⁺ ions during the laser treatment. Studies related to the treatment of Tb:In₂O₃ films with different laser energy densities have been carried out. It is shown that as the laser energy density increases, the film density increases, the thickness decreases, the carrier concentration increases, and the optical band gap widens. Terbium has a low electronegativity (1.1 eV) and a high Tb-O dissociation energy (707 kJ/mol), which brings about a large lattice distortion. The Tb:In₂O₃ films did not show significant crystallization even under laser energy density treatment of up to 250 mJ/cm². Compared with pure In₂O₃-TFT, the doping of Tb ions effectively reduces the off-state current (1.16 × 10⁻¹¹ A vs. 1.66 × 10⁻¹² A), improves the switching current ratio (1.63 × 10⁶ vs. 1.34 × 10⁷) and improves the NBIS stability (ΔV_ON = −10.4 V vs. 6.4 V) and positive bias illumination stress (PBIS) stability (ΔV_ON = 8 V vs. 1.6 V). Full article