Search Results (43)

Impedance-based biosensing has emerged as a critical technology for high-sensitivity biomolecular detection, yet traditional approaches often rely on bulky, costly impedance analyzers, limiting their portability and usability in point-of-care applications. Addressing these limitations, this paper proposes an advanced biosensing system integrating a Silicon Nanowire Field-Effect Transistor (SiNW-FET) biosensor with a high-gain amplification circuit and a 1D Convolutional Neural Network (CNN) implemented on FPGA hardware. This attempt combines SiNW-FET biosensing technology with FPGA-implemented deep learning noise reduction, creating a compact system capable of real-time viral detection with minimal computational latency. The integration of a 1D CNN model on FPGA hardware for adaptive, non-linear noise filtering sets this design apart from conventional filtering approaches by achieving high accuracy and low power consumption in a portable format. This integration of SiNW-FET with FPGA-based CNN noise reduction offers a unique approach, as prior noise reduction techniques for biosensors typically rely on linear filtering or digital smoothing, which lack adaptive capabilities for complex, non-linear noise patterns. By introducing the 1D CNN on FPGA, this architecture enables real-time, high-fidelity noise reduction, preserving critical signal characteristics without compromising processing speed. Notably, the findings presented in this work are based exclusively on comprehensive simulations using COMSOL and MATLAB, as no physical prototypes or biomarker detection experiments were conducted. The SiNW-FET biosensor, functionalized with antibodies specific to viral antigens, detects impedance shifts caused by antibody–antigen interactions, providing a highly sensitive platform for viral detection. A high-gain folded-cascade amplifier enhances the Signal-to-Noise Ratio (SNR) to approximately 70 dB, verified through COMSOL and MATLAB simulations. Additionally, a 1D CNN model is employed for adaptive noise reduction, filtering out non-linear noise patterns and achieving an approximate 75% noise reduction across a broad frequency range. The CNN model, implemented on an Altera DE2 FPGA, enables high-throughput, low-latency signal processing, making the system viable for real-time applications. Performance evaluations confirmed the proposed system’s capability to enhance the SNR significantly while maintaining a compact and energy-efficient design suitable for portable diagnostics. This integrated architecture thus provides a powerful solution for high-precision, real-time viral detection, and continuous health monitoring, advancing the role of biosensors in accessible point-of-care diagnostics. Full article

Silicon qubits based on specific SOI FinFETs and nanowire (NW) transistors have demonstrated promising quantum properties and the potential application of advanced Si CMOS devices for future quantum computing. In this paper, for the first time, the quantum transport characteristics for the next-generation transistor structure of a stack nanosheet (NS) FET and the innovative structure of a fishbone FET are explored. Clear structures are observed by TEM, and their low-temperature characteristics are also measured down to 6 K. Consistent with theoretical predictions, greatly enhanced switching behavior characterized by the reduction of off-state leakage current by one order of magnitude at 6 K and a linear decrease in the threshold voltage with decreasing temperature is observed. A quantum ballistic transport, particularly notable at shorter gate lengths and lower temperatures, is also observed, as well as an additional bias of about 1.3 mV at zero bias due to the asymmetric barrier. Additionally, fishbone FETs, produced by the incomplete nanosheet release in NSFETs, exhibit similar electrical characteristics but with degraded quantum transport due to additional SiGe channels. These can be improved by adjusting the ratio of the channel cross-sectional areas to match the dielectric constants. Full article

Silicon nanowire field effect (SiNW-FET) biosensors have been successfully used in the detection of nucleic acids, proteins and other molecules owing to their advantages of ultra-high sensitivity, high specificity, and label-free and immediate response. However, the presence of the Debye shielding effect in semiconductor devices severely reduces their detection sensitivity. In this paper, a three-dimensional stacked silicon nanosheet FET (3D-SiNS-FET) biosensor was studied for the high-sensitivity detection of nucleic acids. Based on the mainstream Gate-All-Around (GAA) fenestration process, a three-dimensional stacked structure with an 8 nm cavity spacing was designed and prepared, allowing modification of probe molecules within the stacked cavities. Furthermore, the advantage of the three-dimensional space can realize the upper and lower complementary detection, which can overcome the Debye shielding effect and realize high-sensitivity Point of Care Testing (POCT) at high ionic strength. The experimental results show that the minimum detection limit for 12-base DNA (4 nM) at 1 × PBS is less than 10 zM, and at a high concentration of 1 µM DNA, the sensitivity of the 3D-SiNS-FET is approximately 10 times higher than that of the planar devices. This indicates that our device provides distinct advantages for detection, showing promise for future biosensor applications in clinical settings. Full article

As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with high sensitivity and target selectivity in real-time and label-free. Recently, SiNW-FETs have received more attention in fields of biomedical detection. Here, we give a critical review of the progress of SiNW-FETs, in particular, about the reversible surface modification methods. Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and microbial detection. We also discuss the related working principle and technical approaches. Our review provides an extensive discussion for studying the challenges in the future development of SiNW-FETs. Full article

Calcium ions (Ca²⁺) are abundantly present in the human body; they perform essential roles in various biological functions. In this study, we propose a highly sensitive and selective biosensor platform for Ca²⁺ detection, which comprises a dual-gate (DG) field-effect transistor (FET) with a high-k engineered gate dielectric, silicon nanowire (SiNW) random network channel, and Ca²⁺-selective extended gate. The SiNW channel device, which was fabricated via the template transfer method, exhibits superior Ca²⁺ sensing characteristics compared to conventional film channel devices. An exceptionally high Ca²⁺ sensitivity of 208.25 mV/dec was achieved through the self-amplification of capacitively coupled DG operation and an enhanced amplification ratio resulting from the high surface-to-volume ratio of the SiNW channel. The SiNW channel device demonstrated stable and reliable sensing characteristics, as evidenced by minimal hysteresis and drift effects, with the hysteresis voltage and drift rate measuring less than 6.53% of the Ca²⁺ sensitivity. Furthermore, the Ca²⁺-selective characteristics of the biosensor platform were elucidated through experiments with pH buffer, NaCl, and KCl solutions, wherein the sensitivities of the interfering ions were below 7.82% compared to the Ca²⁺ sensitivity. The proposed Ca²⁺-selective biosensor platform exhibits exceptional performance and holds great potential in various biosensing fields. Full article

Acute kidney injury (AKI) is a frequently occurring severe disease with high mortality. Cystatin C (Cys-C), as a biomarker of early kidney failure, can be used to detect and prevent acute renal injury. In this paper, a biosensor based on a silicon nanowire field-effect transistor (SiNW FET) was studied for the quantitative detection of Cys-C. Based on the spacer image transfer (SIT) processes and channel doping optimization for higher sensitivity, a wafer-scale, highly controllable SiNW FET was designed and fabricated with a 13.5 nm SiNW. In order to improve the specificity, Cys-C antibodies were modified on the oxide layer of the SiNW surface by oxygen plasma treatment and silanization. Furthermore, a polydimethylsiloxane (PDMS) microchannel was involved in improving the effectiveness and stability of detection. The experimental results show that the SiNW FET sensors realize the lower limit of detection (LOD) of 0.25 ag/mL and have a good linear correlation in the range of Cys-C concentration from 1 ag/mL to 1 pg/mL, exhibiting its great potential in the future real-time application. Full article

Nanowire or nanobelt sensors based on silicon-on-insulator field-effect transistors (SOI-FETs) are one of the leading directions of label-free biosensors. An essential issue in this device construction type is obtaining reproducible results from electrochemical measurements. It is affected by many factors, including the measuring solution and the design parameters of the sensor. The biosensor surface should be charged minimally for the highest sensitivity and maximum effect from interaction with other charged molecules. Therefore, the pH value should be chosen so that the surface has a minimum charge. Here, we studied the SOI-FET sensor containing 12 nanobelt elements concatenated on a single substrate. Two types of sensing elements of similar design and different widths (0.2 or 3 μm) were located in the chips. The drain-gate measurements of wires with a width of 3 µm are sufficiently reproducible for the entire chip to obtain measurement statistics in air and deionized water. For the pH values from 3 to 12, we found significant changes in source-drain characteristics of nanobelts, which reach the plateau at pH values of 7 and higher. High pH sensitivity (ca. 1500 and 970 mV/pH) was observed in sensors of 3 μm and 0.2 μm in width in the range of pH values from 3 to 7. We found a higher “on” current to “off” current ratio for wide wires. At all studied pH values, I_on/I_off was up to 4600 and 30,800 for 0.2 and 3 μm wires, respectively. In the scheme on the source-drain current measurements at fixed gate voltages, the highest sensitivity to the pH changes reaches a gate voltage of 13 and 19 V for 0.2 μm and 3 μm sensors, respectively. In summary, the most suitable is 3 μm nanobelt sensing elements for the reliable analysis of biomolecules and measurements at pH over 7. Full article

High-sensitivity sensors applied in various diagnostic systems are considered to be a promising technology in the era of the fourth industrial revolution. Biosensors that can quickly detect the presence and concentration of specific biomaterials are receiving research attention owing to the breakthroughs in detection technology. In particular, the latest technologies involving the miniaturization of biosensors using nanomaterials, such as nanowires, carbon nanotubes, and nanometals, have been widely studied. Nano-sized biosensors applied in food assessment and in in vivo measurements have the advantages of rapid diagnosis, high sensitivity and selectivity. Nanomaterial-based biosensors are inexpensive and can be applied to various fields. In the present society, where people are paying attention to health and wellness, high-technology food assessment is becoming essential as the consumer demand for healthy food increases. Thus, biosensor technology is required in the food and medical fields. Carbon nanotubes (CNTs) are widely studied for use in electrochemical biosensors. The sensitive electrical characteristics of CNTs allow them to act as electron transfer mediators in electrochemical biosensors. CNT-based biosensors require novel technologies for immobilizing CNTs on electrodes, such as silicon wafers, to use as biosensor templates. CNT-based electrochemical biosensors that serve as field-effect transistors (FET) increase sensitivity. In this review, we critically discuss the recent advances in CNT-based electrochemical biosensors applied with various receptors (antibodies, DNA fragments, and other nanomaterials) for food evaluation, including pathogens, food allergens, and other food-based substances. Full article

Interleukin 6 (IL-6) has been regarded as a biomarker that can be applied as a predictor for the severity of COVID-19-infected patients. The IL-6 level also correlates well with respiratory dysfunction and mortality risk. In this work, three silanization approaches and two types of biorecognition elements were used on the silicon nanowire field-effect transistors (SiNW-FETs) to investigate and compare the sensing performance on the detection of IL-6. Experimental data revealed that the mixed-SAMs-modified silica surface could have superior surface morphology to APTES-modified and APS-modified silica surfaces. According to the data on detecting various concentrations of IL-6, the detection range of the aptamer-functionalized SiNW-FET was broader than that of the antibody-functionalized SiNW-FET. In addition, the lowest concentration of valid detection for the aptamer-functionalized SiNW-FET was 2.1 pg/mL, two orders of magnitude lower than the antibody-functionalized SiNW-FET. The detection range of the aptamer-functionalized SiNW-FET covered the concentration of IL-6, which could be used to predict fatal outcomes of COVID-19. The detection results in the buffer showed that the anti-IL-6 aptamer could produce better detection results on the SiNW-FETs, indicating its great opportunity in applications for sensing clinical samples. Full article

In this study, we explored the potential of applying biosensors based on silicon nanowire field-effect transistors (bio–NWFETs) as molecular absorption sensors. Using quercetin and Copper (Cu²⁺) ion as an example, we demonstrated the use of an opto–FET approach for the detection of molecular interactions. We found that photons with wavelengths of 450 nm were absorbed by the molecular complex, with the absorbance level depending on the Cu²⁺ concentration. Quantitative detection of the molecular absorption of metal complexes was performed for Cu²⁺ concentrations ranging between 0.1 μM and 100 μM, in which the photon response increased linearly with the copper concentration under optimized bias parameters. Our opto–FET approach showed an improved absorbance compared with that of a commercial ultraviolet-visible spectrophotometry. Full article

Silicon nanowire sensors have demonstrated outstanding utility in biosensing, especially for small biomolecules at extremely low concentrations. However, the sensor is less commonly applied in whole-cell monitoring, such as CAR T-cell counting during cancer treatment. The patient’s T-cells are modified to express chimeric antigen receptors (CAR), targeting specific tumor cells in CAR T-cell treatment. Therefore, the CAR T-cell level in blood is an essential parameter when it comes to determining the immune system’s reactivity to fight cancer cells. Although nanosensors are typically beneficial for early cancer diagnosis and detection, we want to expand their application and explore their usage in cancer treatment monitoring and development. Our previous works showed promising results of using nanosensors to find the most effective immunotherapy. In this work, we study the response of silicon nanowire field-effect transistors (SiNW FET) to the binding of CAR T-cells and discuss the benefits and limitations of the sensors in cell monitoring. The SiNW FETs fabricated in a top-down manner showed superior sensitivity to IgG antibodies sensing in our previous study. A peptide with a high affinity to the designed CAR T-cells immobilized on SiNW FETs to detect the cell binding. We observed distinguished signals following the number of cells binding to the sensing area. The results pave the way for using nanosensors in monitoring cancer treatment, yet they suggest some room for improvement. Full article

Biomolecular detection methods have evolved from simple chemical processes to laboratory sensors capable of acquiring accurate measurements of various biological components. Recently, silicon nanowire field-effect transistors (SiNW-FETs) have been drawing enormous interest due to their potential in the biomolecular sensing field. SiNW-FETs exhibit capabilities such as providing real-time, label-free, highly selective, and sensitive detection. It is highly critical to diagnose infectious diseases accurately to reduce the illness and death spread rate. In this work, a novel SiNW-FET sensor is designed using a semiempirical approach, and the electronic transport properties are studied to detect the COVID-19 spike protein. Various electronic transport properties such as transmission spectrum, conductance, and electronic current are investigated by a semiempirical modeling that is combined with a nonequilibrium Green’s function. Moreover, the developed sensor selectivity is tested by studying the electronic transport properties for other viruses including influenza, rotavirus, and HIV. The results indicate that SiNW-FET can be utilized for accurate COVID-19 identification with high sensitivity and selectivity. Full article

In this study, we report a pH-responsive hydrogel-modified silicon nanowire field-effect transistor for pH sensing, whose modification is operated by spin coating, and whose performance is characterized by the electrical curve of field-effect transistors. The results show that the hydrogel sensor can measure buffer pH in a repeatable and stable manner in the pH range of 3–13, with a high pH sensitivity of 100 mV/pH. It is considered that the swelling of hydrogel occurring in an aqueous solution varies the dielectric properties of acrylamide hydrogels, causing the abrupt increase in the source-drain current. It is believed that the design of the sensor can provide a promising direction for future biosensing applications utilizing the excellent biocompatibility of hydrogels. Full article

In this paper, a potentiometric method is used for monitoring the concentration of glutamine in the bioprocess by employing silicon nanowire biosensors. Just one hydrolyzation reaction was used, which is much more convenient compared with the two-stage reactions in the published papers. For the silicon nanowire biosensor, the Al₂O₃ sensing layer provides a highly sensitive to solution-pH, which has near-Nernstian sensitivity. The sensitive region to detect glutamine is from ≤40 μM to 20 mM. The Sigmoidal function was used to model the pH-signal variation versus the glutamine concentration. Compared with the amperometric methods, a consistent result from different devices could be directly obtained. It is a fast and direct method achieved with our real-time setup. Also, it is a label-free method because just the pH variation of the solution is monitored. The obtained results show the feasibility of the potentiometric method for monitoring the glutamine concentrations in fermentation processes. Our approach in this paper can be applied to various analytes. Full article

This work performs a detailed comparison of the channel width folding effectiveness of the FinFET, vertically stacked nanosheet transistor (VNSFET), and vertically stacked nanowire transistor (VNWFET) under the constraints of the same vertical (fin) height and layout footprint size (fin width) defined by the same lithography and dry etching capabilities of a foundry. The results show that the nanosheet structure has advantages only when the intersheet spacing or vertical sheet pitch is less than the sheet width. Additionally, for the nanowire transistors, the wire spacing should be less than 57% of the wire diameter in order to have a folding ratio better than a FinFET with the same total height and footprint. Considering the technological constraints for the gate oxide and metal gate thicknesses, the minimum intersheet/interwire spacing should be in the range of 7 to 8 nm. Then, the VNSFET structure has the advantage of boosting the chip density over the FinFET ones only when the sheet width is wider than 8 nm. On the other hand, the VNWFET structure may have a better footprint sizing than the FinFET ones only when the nanowire diameter is larger than 14 nm. In addition, considering the different channel mobilities along the different surface directions of the silicon channel and also some other unfavorable natures such as more complicated processes, more significant surface roughness scattering, and parasitic capacitance effects, the nanosheet transistor does not show superior scaling capability than the FinFET counterpart when approaching the ultimate technology node. Full article