Search Results (45)

Integrated light-emitting diodes (LEDs) with waveguides play an important role in applications such as augmented reality (AR) displays, particularly regarding coupling efficiency optimization. Quantum dot light-emitting diodes (QLEDs), an emerging high-performance optoelectronic device, demonstrate substantial potential for next-generation display technologies. This study investigates the influence of microcavity modulation on the output of QLEDs coupled with a silicon nitride (SiNx) waveguide by simulating a white light QLED (W-QLED) with a broad spectrum and mixed RGB QDs (RGB-QLED) with a comparatively narrower spectrum. The microcavity converts both W-QLED and RGB-QLED emissions from broadband white-light emissions into narrowband single-wavelength outputs. Specifically, both of them have demonstrated wavelength tuning and full-width at half-maximum (FWHM) narrowing across the visible spectrum from 400 nm to 750 nm due to the microcavity modulation. The resulting RGB-QLED achieves a FWHM of 11.24 nm and reaches 110.76% of the National Television System Committee 1953 (NTSC 1953) standard color gamut, which is a 20.95% improvement over W-QLED. Meanwhile, due to the Purcell effect of the microcavity, the output efficiency of the QLED coupled with a SiNx waveguide is also significantly improved by optimizing the thickness of the Ag anode and introducing a tilted reflective mirror into the SiNx waveguide. Moreover, the optimal output efficiency of RGB-QLED with the tilted Ag mirror is 10.13%, representing a tenfold increase compared to the sample without the tilted Ag mirror. This design demonstrates an efficient and compact approach for the near-eye full-color display technology. Full article

Quantum dot light-emitting diodes (QLEDs) based on high-color-purity blue quantum dots (QDs) are crucial for the development of next-generation displays. I-III-VI type QDs have been recognized as eco-friendly luminescent materials for QLED applications due to their tunable band gap and high-stable properties. However, efficient blue-emitting I-III-VI QDs remain rare owing to the high densities of the intrinsic defects and the surface defects. Herein, narrow-band blue-emissive CuAlSe₂/Ga₂S₃/ZnS QDs is synthesized via a facile strategy. The resulting QDs exhibit a sharp blue emission peak at 450 nm with a full width at half maximum (FWHM) of 35 nm, achieved by coating a double-shell structure of Ga₂S₃ and ZnS, which is associated with the near-complete passivation of Cu-related defects (e.g., Cu vacancies) that enhances the band-edge emission, accompanied by an improvment in photoluminescence quantum yield up to 69%. QLEDs based on CuAlSe₂/Ga₂S₃/ZnS QDs are fabricated, exhibiting an electroluminescence peak at 453 nm with a FWHM of 39 nm, a current efficiency of 3.16 cd A⁻¹, and an external quantum efficiency of 0.35%. This research paves the way for the development of high-efficiency eco-friendly blue QLEDs. Full article

We developed inverted red quantum dot light-emitting diodes (QLEDs) with ZnO nanoparticles synthesized in open and closed systems. Wurtzite-structured ZnO nanoparticles were synthesized using potassium hydroxide and zinc acetate dihydrate at various temperatures in the open and closed systems. The particle size increases with increasing synthesis temperature. The ZnO nanoparticles synthesized at 50, 60, and 70 °C in the closed system have an average particle size of 3.2, 4.0, and 5.4 nm, respectively. The particle size is larger in the open system compared to the closed system as the methanol solvent evaporates during the synthesis process. The surface defect-induced emission in ZnO nanoparticles shifts to a longer wavelength and the emission intensity decreases as the synthesis temperature increases. The inverted red QLEDs were fabricated with a synthesized ZnO nanoparticle electron transport layer. The driving voltage of the inverted QLEDs decreases as the synthesis temperature increases. The current efficiency is higher in the inverted red QLEDs with the ZnO nanoparticles synthesized in the closed system compared to the devices with the nanoparticles synthesized in the open system. The device with the ZnO nanoparticles synthesized at 60 °C in the closed system exhibits the maximum current efficiency of 5.8 cd/A. Full article

Quantum dot light-emitting diodes (QLEDs) have potential application prospects in new-type display fields due to their wide color gamut, high energy efficiency, as well as low-cost mass production. Research on lead-free and cadmium-free blue quantum dots (QDs) is urgently needed for the development of QLED technology. For I-III-VI QDs, multiple luminescent centers generated by imbalanced local charge distribution have a detrimental effect on the emission performance. Regulating the chemical composition is one of the effective methods to control the defect type of blue-emitting QDs. In this work, narrow-bandwidth (with a full width at half maximum of 53 nm) blue CuAlSe₂ QDs are achieved by altering the Cu/Al ratio. As the Cu/Al ratio increases from 0.2 to 1, the photoluminescence (PL) emission peak is red-shifted from 450 to 460 nm, with PL quantum yield up to 56%. The PL spectra are deconvoluted into three emission peaks by Gaussian fitting analysis, demonstrating the main luminescent contribution coming from the radiative recombination of electrons residing in the aluminum–copper antisite (Al_Cu) defect level with the holes in the valence band. This work provides a new approach for preparing eco-friendly and high-efficient blue-emitting QDs. Full article

One of the major challenges in QLED research is improving the stability of the devices. In this study, we fabricated all inorganic quantum-dot light emitting diodes (QLEDs) using hafnium oxide (HfO_x) as the hole transport layer (HTL), a material commonly used for insulator. Oxygen vacancies in HfO_x create defect states below the Fermi level, providing a pathway for hole injection. The concentration of these oxygen vacancies can be controlled by the annealing temperature. We optimized the all-inorganic QLEDs with HfO_x as the HTL by changing the annealing temperature. The optimized QLEDs with HfO_x as the HTL showed a maximum luminance and current efficiency of 66,258 cd/m² and 9.7 cd/A, respectively. The fabricated all-inorganic QLEDs exhibited remarkable stability, particularly when compared to devices using organic materials for the HTL. Under extended storage in ambient conditions, the all-inorganic device demonstrated a significantly enhanced operating lifetime (T₅₀) of 5.5 h, which is 11 times longer than that of QLEDs using an organic HTL. These results indicate that the all-inorganic QLEDs structure, with ITO/MoO₃/HfO_x/QDs/ZnMgO/Al, exhibits superior stability compared to organic-inorganic hybrid QLEDs. Full article

Quantum dot light-emitting diodes (QLEDs) hold great promise for next-generation display applications owing to their exceptional optical properties and versatile tunability. In this study, we investigate the effects of quantum dot (QD) shell thickness, polyethylenimine (PEI) concentration, and PEI layer position on the performance of inverted QLED devices. Two types of alloyed-core/shell QDs with varying shell thicknesses were synthesized using a one-pot method with mean particle sizes of 8.0 ± 0.9 nm and 10.3 ± 1.3 nm for thin- and thick-shelled QDs, respectively. Thick-shelled QDs exhibited a higher photoluminescence quantum yield (PLQY) and a narrower emission linewidth compared to their thin-shelled counterparts. Next, QLEDs employing these QDs were fabricated. The incorporation of PEI layers on either side of the QD emissive layer significantly enhanced device performance. Using PEI on the hole transport side resulted in greater improvement than on the electron injection side. Sandwiching the QD layer between two PEI layers led to the best performance, with a maximum external quantum efficiency (EQE) of 17% and a peak luminance of 91,174 cd/m² achieved using an optimized PEI concentration of 0.025 wt% on both electron injection and hole injection sides. This study highlights the critical role of QD shell engineering and interfacial modification in achieving high-performance QLEDs for display applications. Full article

The growing demand for wearable and attachable displays has sparked significant interest in flexible quantum-dot light-emitting diodes (QLEDs). However, the challenges of fabricating and operating QLEDs on flexible substrates persist due to the lack of stable and low-temperature processable charge-injection/-transporting layers with aligned energy levels. In this study, we utilized NiO_x nanoparticles that are compatible with flexible substrates as a hole-injection layer (HIL). To enhance the work function of the NiO_x HIL, we introduced a self-assembled dipole modifier called 4-(trifluoromethyl)benzoic acid (4–CF₃–BA) onto the surface of the NiO_x nanoparticles. The incorporation of the dipole molecules through adsorption treatment has significantly changed the wettability and electronic characteristics of NiO_x nanoparticles, resulting in the formation of NiO(OH) at the interface and a shift in vacuum level. The alteration of surface electronic states of the NiO_x nanoparticles not only improves the carrier balance by reducing the hole injection barrier but also prevents exciton quenching by passivating defects in the film. Consequently, the NiO_x-based red QLEDs with interfacial modification demonstrate a maximum current efficiency of 16.1 cd/A and a peak external quantum efficiency of 10.3%. This represents a nearly twofold efficiency enhancement compared to control devices. The mild fabrication requirements and low annealing temperatures suggest potential applications of dipole molecule-modified NiO_x nanoparticles in flexible optoelectronic devices. Full article

At present, heavy-metal-free quantum dot light-emitting diodes (QLEDs) have shown great potential as a research hotspot in the field of optoelectronic devices. This article reviews the research on heavy-metal-free quantum dot (QD) materials and light-emitting diode (LED) devices. In the first section, we discussed the hazards of heavy-metal-containing quantum dots (QDs), such as environmental pollution and human health risks. Next, the main representatives of heavy-metal-free QDs were introduced, such as InP, ZnE (E=S, Se and Te), CuInS₂, Ag₂S, and so on. In the next section, we discussed the synthesis methods of heavy-metal-free QDs, including the hot injection (HI) method, the heat up (HU) method, the cation exchange (CE) method, the successful ionic layer adsorption and reaction (SILAR) method, and so on. Finally, important progress in the development of heavy-metal-free QLEDs was summarized in three aspects (QD emitter layer, hole transport layer, and electron transport layer). Full article

Many quantum dot light-emitting diodes (QLEDs) utilize ZnO nanoparticles (NPs) as an electron injection layer (EIL). However, the use of the ZnO NP EIL material often results in a charge imbalance within the quantum dot (QD) emitting layer (EML) and exciton quenching at the interface of the QD EML and ZnO NP EIL. To overcome these challenges, we introduced an arginine (Arg) interlayer (IL) onto the ZnO NP EIL. The Arg IL elevated the work function of ZnO NPs, thereby suppressing electron injection into the QD, leading to an improved charge balance within the QDs. Additionally, the inherent insulating nature of the Arg IL prevented direct contact between QDs and ZnO NPs, reducing exciton quenching and consequently improving device efficiency. An inverted QLED (IQLED) utilizing a 20 nm-thick Arg IL on the ZnO NP EIL exhibited a 2.22-fold increase in current efficiency and a 2.28-fold increase in external quantum efficiency (EQE) compared to an IQLED without an IL. Likewise, the IQLED with a 20 nm-thick Arg IL on the ZnO NP EIL demonstrated a 1.34-fold improvement in current efficiency and a 1.36-fold increase in EQE compared to the IQLED with a 5 nm-thick polyethylenimine IL on ZnO NPs. Full article

The energy level offset at inorganic layer–organic layer interfaces and the mismatch of hole/electron mobilities of the individual layers greatly limit the establishment of balanced charge carrier injection inside the emissive layer of halide perovskite light-emitting diodes (PeQLEDs). In contrast with other types of light-emitting devices, namely OLEDs and QLEDs, various techniques such as inserting an electron suppression layer between the emissive and electron transport layer have been employed as a means of establishing charge carrier injection into their respective emissive layers. Hence, in this study, we report the use of a thin layer of Poly(4-vinylpyridine) (PVPy) (an electron suppression material) placed between the emissive and electron transport layer of a halide PeQLEDs fabricated with an inverted configuration. With ZnO as the electron transport material, devices fabricated with a thin PVPy interlayer between the ZnO ETL and CsPbBr₃ -based green QDs emissive layer yielded a 4.5-fold increase in the maximum observed luminance and about a 10-fold increase in external quantum efficiency (EQE) when compared to ones fabricated without PVPy. Furthermore, the concentration and coating process conditions of CsPbBr₃ QDs were altered to produce various thicknesses and film properties which resulted in improved EQE values for devices fabricated with QDs thin films of lower surface root-mean-square (RMS) values. These results show that inhibiting the excessive injection of electrons and adjusting QDs layer thickness in perovskite-inverted QLEDs is an effective way to improve device luminescence and efficiency, thereby improving the carrier injection balance. Full article

Vertical light-emitting transistors (VLETs) consisting of vertically stacked unipolar transistors and organic light-emitting diodes (OLEDs) have been proposed as a prospective building block for display technologies. In addition to OLEDs, quantum-dot (QD) LEDs (QLEDs) with high brightness and high color purity have also become attractive light-emitting devices for display applications. However, few studies have attempted to integrate QLEDs into VLETs, as this not only involves technical issues such as compatible solution process of QDs and fine patterning of electrodes in multilayer stacked geometries but also requires a high driving current that is demanding on transistor design. Here we show that these integration issues of QLEDs can be addressed by using inorganic transistors with robust processability and high mobility, such as the studied ZnO transistor, which facilitates simple fabrication of QD VLETs (QVLETs) with efficient emission in the patterned channel area, suitable for high-resolution display applications. We perform a detailed optimization of QVLET by modifying ZnO:polyethylenimine nanocomposite as the electron injection layer (EIL) between the integrated ZnO transistor/QLED, and achieve the highest external quantum efficiency of ~3% and uniform emission in the patterned transistor channel. Furthermore, combined with a systematic study of corresponding QLEDs, electron-only diodes, and electroluminescence images, we provide a deeper understanding of the effect of EIL modification on current balance and distribution, and thus on QVLET performance. Full article

Quantum dots (QDs) have attracted a lot of attention over the past decades due to their sharp emission spectrum and color, which can be tuned by changing just the particle size and chromophoric stability. All these advantages of QDs make quantum dot light-emitting diodes (QLEDs) promising candidates for display and light-source applications. This paper demonstrates a large-emitting-area QLED fabricated by a full-solution process. This QLED is composed of indium tin oxide (ITO) as the anode, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) as the hole injection layer (HIL), and poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine (poly-TPD) as the hole-transport layer (HTL). The light-emitting layer (EML) is composed of green CdSe/ZnS quantum dots. By applying the ZnO nanoparticles as the electron-injection/transport layer, QLED devices are prepared under a full-solution process. The large-emitting-area QLED exhibits a low turn-on voltage of around 2~3 V, and the International Commission on Illumination (CIE) 1931 coordinate value of the emission spectrum was (0.31, 0.66). The large emitting area and the unique QLED structure of the device make it possible to apply these features to inkjet printing quantum dot light sources and quantum dot display applications. Full article

PEDOT:PSS (polyethylene dioxythiophene:polystyrenesulfonate) is a commonly used hole injection layer (HIL) in optoelectronic devices due to its high conductive properties and work function. However, the acidic and hygroscopic nature of PEDOT:PSS can be problematic for device stability over time. To address this issue, in this study we demonstrated the potential of an organic–inorganic hybrid HIL by incorporating solution-processed WOx nanoparticles (WOx NPs) into the PEDOT:PSS mixture. This hybrid solution was found to have a superior hole transport ability and low Ohmic contact resistance contributing to higher brightness (~62,000 cd m⁻²) and current efficiency (13.1 cd A⁻¹) in the manufactured quantum-dot-based light-emitting diodes (QLEDs). In addition, the resulting devices achieved a relative operational lifetime of 7071 h, or approximately twice that of traditional QLEDs with PEDOT:PSS HILs. The proposed method is an uncomplicated, reliable, and low-cost way to achieve long operational lifetimes without sacrificing efficiency in optoelectronic devices. Full article

The purpose of this study was to investigate the effect of substrate characteristics on the performance of quantum-dot light-emitting diodes (QLEDs) with the aim of developing high-performance flexible QLEDs. Specifically, we compared QLEDs made with a flexible polyethylene naphthalate (PEN) substrate to those made with a rigid glass substrate, using the same materials and structure except for the substrates. Our findings indicate that the PEN QLED had a 3.3 nm wider full width at half maximum and a 6 nm redshifted spectrum in comparison to the glass QLED. Additionally, the PEN QLED exhibited a 6% higher current efficiency, a flatter current efficiency curve, and a 2.25-V lower turn-on voltage, indicating superior overall characteristics. We attribute the spectral difference to the optical properties of the PEN substrate, such as light transmittance and refractive index. Our study also revealed that the electro-optical properties of the QLEDs were consistent with the electron-only device and transient electroluminescence results, which suggests that the improved charge injection properties of the PEN QLED were responsible. Overall, our study provides valuable insights into the relationship between substrate characteristics and QLED performance, which can be used to develop high-performance QLEDs. Full article

We present a study on the potential use of sulfuric acid-treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as a viable alternative to indium tin oxide (ITO) electrodes in quantum dot light-emitting diodes (QLEDs). ITO, despite its high conductivity and transparency, is known for its disadvantages of being brittle, fragile, and expensive. Furthermore, due to the high hole injection barrier of quantum dots, the need for electrodes with a higher work function is becoming more significant. In this report, we present solution-processed, sulfuric acid-treated PEDOT:PSS electrodes for highly efficient QLEDs. The high work function of the PEDOT:PSS electrodes improved the performance of the QLEDs by facilitating hole injection. We demonstrated the recrystallization and conductivity enhancement of PEDOT:PSS upon sulfuric acid treatment using X-ray photoelectron spectroscopy and Hall measurement. Ultraviolet photoelectron spectroscopy (UPS) analysis of QLEDs showed that sulfuric acid-treated PEDOT:PSS exhibited a higher work function than ITO. The maximum current efficiency and external quantum efficiency based on the PEDOT:PSS electrode QLEDs were measured as 46.53 cd/A and 11.01%, which were three times greater than ITO electrode QLEDs. These findings suggest that PEDOT:PSS can serve as a promising replacement for ITO electrodes in the development of ITO-free QLED devices. Full article