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Search Results (3)

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Keywords = oxidation scanning probe lithography

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7 pages, 1856 KB  
Communication
Machinability of MoS2 after Oxygen Plasma Treatment under Mechanical Scanning Probe Lithography
by Yang He, Xing Su and Kuo Hai
Crystals 2024, 14(3), 280; https://doi.org/10.3390/cryst14030280 - 15 Mar 2024
Cited by 5 | Viewed by 2720
Abstract
The surface of molybdenum disulfide (MoS2) underwent oxygen plasma treatment to enhance its machinability and mitigate the tearing effects commonly associated with mechanical forces on 2D materials. This treatment led to the oxidation of the atoms on the top 1–3 layers [...] Read more.
The surface of molybdenum disulfide (MoS2) underwent oxygen plasma treatment to enhance its machinability and mitigate the tearing effects commonly associated with mechanical forces on 2D materials. This treatment led to the oxidation of the atoms on the top 1–3 layers of MoS2, resulting in the formation of MoO3 on the surface. During mechanical scanning probe lithography (m-SPL), only the surface oxide layer was uniformly removed, with material accumulation occurring predominantly on one side of the machined area. The resolution of the machining process was significantly enhanced via dynamic lithography while maintaining atomic-level smoothness in the machined area. Importantly, these techniques only removed the surface oxide layer, preserving the integrity of the underlying MoS2 surface, which was pivotal in avoiding damage to the original material structure. This study provided valuable insights and practical guidance for the nanofabrication of transition metal dichalcogenides (TMDCs) nanodevices, demonstrating a method to finely tune the machining of these materials. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
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11 pages, 2311 KB  
Article
Molecular Recognition by Silicon Nanowire Field-Effect Transistor and Single-Molecule Force Spectroscopy
by Francisco M. Espinosa, Manuel R. Uhlig and Ricardo Garcia
Micromachines 2022, 13(1), 97; https://doi.org/10.3390/mi13010097 - 8 Jan 2022
Cited by 7 | Viewed by 3943
Abstract
Silicon nanowire (SiNW) field-effect transistors (FETs) have been developed as very sensitive and label-free biomolecular sensors. The detection principle operating in a SiNW biosensor is indirect. The biomolecules are detected by measuring the changes in the current through the transistor. Those changes are [...] Read more.
Silicon nanowire (SiNW) field-effect transistors (FETs) have been developed as very sensitive and label-free biomolecular sensors. The detection principle operating in a SiNW biosensor is indirect. The biomolecules are detected by measuring the changes in the current through the transistor. Those changes are produced by the electrical field created by the biomolecule. Here, we have combined nanolithography, chemical functionalization, electrical measurements and molecular recognition methods to correlate the current measured by the SiNW transistor with the presence of specific molecular recognition events on the surface of the SiNW. Oxidation scanning probe lithography (o-SPL) was applied to fabricate sub-12 nm SiNW field-effect transistors. The devices were applied to detect very small concentrations of proteins (500 pM). Atomic force microscopy (AFM) single-molecule force spectroscopy (SMFS) experiments allowed the identification of the protein adsorption sites on the surface of the nanowire. We detected specific interactions between the biotin-functionalized AFM tip and individual avidin molecules adsorbed to the SiNW. The measurements confirmed that electrical current changes measured by the device were associated with the deposition of avidin molecules. Full article
(This article belongs to the Special Issue Nanolithography: A Theme Issue in Honor of Professor José María De Teresa on the Occasion of His 50th Birthday)
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12 pages, 4619 KB  
Article
Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces
by Elena Pinilla-Cienfuegos, Samuel Mañas-Valero, Efrén Navarro-Moratalla, Sergio Tatay, Alicia Forment-Aliaga and Eugenio Coronado
Appl. Sci. 2016, 6(9), 250; https://doi.org/10.3390/app6090250 - 8 Sep 2016
Cited by 16 | Viewed by 9104
Abstract
The integration of atomically-thin layers of two dimensional (2D) materials in nanodevices demands for precise techniques at the nanoscale permitting their local modification, structuration or resettlement. Here, we present the use of Local Oxidation Nanolithography (LON) performed with an Atomic Force Microscope (AFM) [...] Read more.
The integration of atomically-thin layers of two dimensional (2D) materials in nanodevices demands for precise techniques at the nanoscale permitting their local modification, structuration or resettlement. Here, we present the use of Local Oxidation Nanolithography (LON) performed with an Atomic Force Microscope (AFM) for the patterning of nanometric motifs on different metallic Transition Metal Dichalcogenides (TMDCs). We show the results of a systematic study of the parameters that affect the LON process as well as the use of two different modes of lithographic operation: dynamic and static. The application of this kind of lithography in different types of TMDCs demonstrates the versatility of the LON for the creation of accurate and reproducible nanopatterns in exfoliated 2D-crystals and reveals the influence of the chemical composition and crystalline structure of the systems on the morphology of the resultant oxide motifs. Full article
(This article belongs to the Special Issue Two-Dimensional Transition Metal Dichalcogenides)
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