Search Results (8)

The prototype misfit layer compound (SnS)_1.17NbS₂ consists alternatingly of a metallic triatomic NbS₂ layer, in which Nb atoms are sandwiched by S atoms, and an insulating SnS double layer featuring a NaCl-type structure. Here we investigate the effect of lattice misfit on the stability and chemical bonding in the misfit layer compound using a first-principles density functional theory approach. The calculations show that for the (SnS)_1+xNbS₂ approximants, the most stable one has x = 0.167, close to the experimental observations. Charge analysis finds a moderate charge transfer from SnS to NbS₂. Sn or S vacancies in the SnS part affect the electronic properties and interlayer interactions. The obtained information here helps in understanding the mechanism of formation and stability of misfit layer compounds and ferecrystals and further contributes to the design of novel multilayer compounds and emerging van der Waals heterostructures. Full article

The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substrate under a compressive misfit strain. An addition of a small atomic fraction of 1% Bi atoms, substituting As atoms in the layer, predominantly enhances the spin–orbit coupling strength in its valence band. The presence of bismuth results in a small decrease in the ferromagnetic Curie temperature and a distinct increase in the coercive fields. On the other hand, the Bi incorporation into the layer strongly enhances the magnitude of negative magnetoresistance without affecting the hole concentration in the layer. The negative magnetoresistance is interpreted in terms of the suppression of weak localization in a magnetic field. Application of the weak-localization theory for two-dimensional ferromagnets by Dugaev et al. to the experimental magnetoresistance results indicates that the decrease in spin–orbit scattering length accounts for the enhanced magnetoresistance in (Ga,Mn)(Bi,As). Full article

During solidification of metallic materials, heterogeneous nucleation occurs on substrates, either endogenous or exogenous. The potency of the substrates for nucleation is mainly dependent upon the atomic arrangements on the substrate surface, which are affected by the lattice misfit between the substrate and the nucleated solid, the surface roughness at atomic scale, and the chemical interaction between the substrates and the melt. Extensive examinations on metal/substrate (M/S) interfaces at atomic scale by the state-of-the-art aberration (Cs) corrected STEM and associated EDS and EELS have shown that alloying elements in liquid melts tend to segregate at the interfaces, leading to the formation of various 2-dimensional compounds (2DCs) or 2-dimensional solutions (2DSs), depending upon segregation behavior of the elements. For instance, Al₃Ti 2DC and Ti₂Zr 2DC at the Al/TiB₂ interface, Y₂O₃ 2DC at the Mg/MgO interface, and a Si-rich 2DS layer at Al-Si/TiB₂ interface have been identified. Such interfacial segregations significantly affect nucleation potency of the substrates, resulting in either promoting or impeding the heterogeneous nucleation process during solidification. In this paper, we present an overview of the current studies of interfacial segregation behavior, the structure and chemistry of interfaces, and their impacts on the subsequent heterogeneous nucleation and grain initiation processes. Our focus is on the advances made in the understanding of the mechanisms for nucleation and grain refinement. It is demonstrated that it is feasible to manipulate heterogeneous nucleation by modifying nucleation potency of a substrate through deliberate interfacial segregation of desirable elements, achieving effective control of the grain structure of cast metallic materials. Full article

We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount of heavy Bi atoms to the prototype dilute ferromagnetic semiconductor (Ga,Mn)As enhances significantly the spin–orbit coupling strength in its valence band, which essentially modifies certain magnetoelectric properties of the material. Our investigations demonstrate that an addition of just 1% Bi atomic fraction, substituting As atoms in the (Ga,Mn)As crystal lattice, causes an increase in the PHE magnitude by a factor of 2.5. Moreover, Bi incorporation into the layers strongly enhances their coercive fields and uniaxial magneto-crystalline anisotropy between the in-plane ⟨110⟩ crystallographic directions in the layers grown under a compressive misfit strain. The displayed two-state behaviour of the PHE resistivity at zero magnetic field, which may be tuned by the control of applied field orientation, could be useful for application in spintronic devices, such as nonvolatile memory elements. Full article

Misfit layered compounds (MLCs) have been studied in the literature for the last 40 years. They are generally made of an alternating sequence of two monolayers, a distorted rocksalt structure, and a hexagonal layered compound. In a typical MLC, the c-axis is common to the two monolayers and so is one of the axes in the layer plan. However, the two compounds are non-commensurate along at least one axis, and the ratio between the two axes is an irrational number making the MLC a non-stoichiometric compound. The two main families of MLC are those based on metal dichalcogenides and CoO₂ as the hexagonal layered compound. Traditionally, ternary MLCs were prepared and studied, but some quaternary and multinary MLC minerals have been known for many years. Over the last few years, interest in MLCs with four and even larger number of atoms has grown. Doping or alloying of a ternary MLC permits precise control of the charge carrier density and hence the electrical, thermoelectric, catalytic, and optical properties of such compounds. In this short review, some of these developments will be discussed with the main emphasis put on quaternary MLC nanotubes belonging to the chalcogenide series. The synthesis, structural characterization, and some of their properties are considered. Some recent developments in quaternary cobaltite MLCs and recent studies on exfoliated MLCs are discussed as well. Full article

The GaInAsSb material has been conventionally grown on lattice-matched GaSb substrates. In this work, we transplanted this material onto the GaAs substrates in molecular beam epitaxy (MBE). The threading dislocations (TDs) originating from the large lattice mismatch were efficiently suppressed by a novel metamorphic buffer layer design, which included the interfacial misfit (IMF) arrays at the GaSb/GaAs interface and strained GaInSb/GaSb multi-quantum wells (MQWs) acting as dislocation filtering layers (DFLs). Cross-sectional transmission electron microscopy (TEM) images revealed that a large part of the dislocations was bonded on the GaAs/GaSb interface due to the IMF arrays, and the four repetitions of the DFL regions can block most of the remaining threading dislocations. Etch pit density (EPD) measurements indicated that the dislocation density in the GaInAsSb material on top of the buffer layer was reduced to the order of 10⁶ /cm², which was among the lowest for this compound material grown on GaAs. The light emitting diodes (LEDs) based on the GaInAsSb P-N structures on GaAs exhibited strong electro-luminescence (EL) in the 2.0–2.5 µm range. The successful metamorphic growth of GaInAsSb on GaAs with low dislocation densities paved the way for the integration of various GaInAsSb based light emitting devices on the more cost-effective GaAs platform. Full article

A basic summary of thermoelectric principles is presented in a historical context, following the evolution of the field from initial discovery to modern day high-zT materials. A specific focus is placed on nanocomposite materials as a means to solve the challenges presented by the contradictory material requirements necessary for efficient thermal energy harvest. Misfit layer compounds are highlighted as an example of a highly ordered anisotropic nanocomposite system. Their layered structure provides the opportunity to use multiple constituents for improved thermoelectric performance, through both enhanced phonon scattering at interfaces and through electronic interactions between the constituents. Recently, a class of metastable, turbostratically-disordered misfit layer compounds has been synthesized using a kinetically controlled approach with low reaction temperatures. The kinetically stabilized structures can be prepared with a variety of constituent ratios and layering schemes, providing an avenue to systematically understand structure-function relationships not possible in the thermodynamic compounds. We summarize the work that has been done to date on these materials. The observed turbostratic disorder has been shown to result in extremely low cross plane thermal conductivity and in plane thermal conductivities that are also very small, suggesting the structural motif could be attractive as thermoelectric materials if the power factor could be improved. The first 10 compounds in the [(PbSe)1+δ]m(TiSe2)n family (m, n ≤ 3) are reported as a case study. As n increases, the magnitude of the Seebeck coefficient is significantly increased without a simultaneous decrease in the in-plane electrical conductivity, resulting in an improved thermoelectric power factor. Full article

A series of (MS)_1+x(TiS₂)₂ (M = Pb, Bi, Sn) misfit layer compounds are proposed as bulk thermoelectric materials. They are composed of alternating rock-salt-type MS layers and paired trigonal anti-prismatic TiS₂ layers with a van der Waals gap. This naturally modulated structure shows low lattice thermal conductivity close to or even lower than the predicted minimum thermal conductivity. Measurement of sound velocities shows that the ultra-low thermal conductivity partially originates from the softening of the transverse modes of lattice wave due to weak interlayer bonding. Combined with a high power factor, the misfit layer compounds show a relatively high ZT value of 0.28~0.37 at 700 K. Full article