Search Results (10)

Metal-assisted catalyzed etching (MACE) technology is convenient and efficient for fabricating large-area silicon nanowires at room temperature. However, the mechanism requires further exploration, particularly the dynamic effect of various ions in the acid-etching solution. This paper investigated the MACE of silicon wafers predeposited with metal nanofilms in an HF-M(NO₃)x-H₂O etching solution (where M(NO₃)x is the nitrate of the fourth-period elements of the periodic table). The oxidizing ability of Fe³⁺ and NO₃⁻ was demonstrated, and the dynamic influence of metal ions on the etching process was discussed. The results show that the MACE of silicon can be realized in various HF-M(NO₃)_x-H₂O etching solutions, such as KNO₃, Al(NO₃)₃, Cr(NO₃)₃, Mn(NO₃)₂, Ni(NO₃)₂, Co(NO₃)₂, HNO₃, and Ca(NO₃)₂. It is confirmed that the concentration and type of cations in the etching solution affect the etching rate and morphology of silicon. Fe³⁺ and NO₃⁻ act as oxidants in catalytic etching. The fastest etching rate is about 5~6 μm/h in Ni(NO₃)₂, Co(NO₃)₂, and Ca(NO₃)₂ etching solutions. However, a high concentration of K⁺ hinders silicon etching. This study expands the application of MACE etching solution systems. Full article

The development of multifunctional biomimetic nanozymes with high catalytic activity and sensitive response is rapidly advancing. The hollow nanostructures, including metal hydroxides, metal-organic frameworks, and metallic oxides, possess excellent loading capacity and a high surface area-to-mass ratio. This characteristic allows for the exposure of more active sites and reaction channels, resulting in enhanced catalytic activity of nanozymes. In this work, based on the coordinating etching principle, a facile template-assisted strategy for synthesizing Fe(OH)₃ nanocages by using Cu₂O nanocubes as the precursors was proposed. The unique three-dimensional structure of Fe(OH)₃ nanocages endows it with excellent catalytic activity. Herein, in the light of Fe(OH)₃-induced biomimetic nanozyme catalyzed reactions, a self-tuning dual-mode fluorescence and colorimetric immunoassay was successfully constructed for ochratoxin A (OTA) detection. For the colorimetric signal, 2,2′-azino-bis (3-ethylbenzothiazoline-6-sulfonic acid) diammonium salt (ABTS) can be oxidized by Fe(OH)₃ nanocages to form a color response that can be preliminarily identified by the human eye. For the fluorescence signal, the fluorescence intensity of 4-chloro-1-naphthol (4-CN) can be quantitatively quenched by the valence transition of Ferric ion in Fe(OH)₃ nanocages. Due to the significant self-calibration, the performance of the self-tuning strategy for OTA detection was substantially enhanced. Under the optimized conditions, the developed dual-mode platform accomplishes a wide range of 1 ng/L to 5 μg/L with a detection limit of 0.68 ng/L (S/N = 3). This work not only develops a facile strategy for the synthesis of highly active peroxidase-like nanozyme but also achieves promising sensing platform for OTA detection in actual samples. Full article

In this study, we investigated the use of porous silicon (PSi) fabricated using metal-assisted chemical etching (MACE) as a substrate for the deposition of Au nanoparticles (NPs) for the reduction of nitroaromatic compounds. PSi provides a high surface area for the deposition of Au NPs, and MACE allows for the fabrication of a well-defined porous structure in a single step. We used the reduction of p-nitroaniline as a model reaction to evaluate the catalytic activity of Au NPs on PSi. The results indicate that the Au NPs on the PSi exhibited excellent catalytic activity, which was affected by the etching time. Overall, our results highlighted the potential of PSi fabricated using MACE as a substrate for the deposition of metal NPs for catalytic applications. Full article

Silicon structures with ultra-high aspect ratios have great potential applications in the fields of optoelectronics and biomedicine. However, the slope and increased roughness of the sidewalls inevitably introduced during the use of conventional etching processes (e.g., Bosch and DRIE) remain an obstacle to their application. In this paper, 4-inch wafer-scale, ultra-high aspect ratio (>140:1) microscale silicon structures with smooth sidewalls are successfully prepared using metal-assisted chemical etching (MacEtch). Here, we clarify the impact of the size from the metal catalytic structure on the sidewall roughness. By optimizing the etchant ratio to accelerate the etch rate of the metal-catalyzed structure and employing thermal oxidation, the sidewall roughness can be significantly reduced (average root mean square (RMS) from 42.3 nm to 15.8 nm). Simulations show that a maximum exciton production rate (G_max) of 1.21 × 10²⁶ and a maximum theoretical short-circuit current density (J_sc) of 39.78 mA/cm² can be obtained for the micropillar array with smooth sidewalls, which have potential applications in high-performance microscale photovoltaic devices. Full article

The morphology and mesoporosity of zeolite are two vital properties to determine its performance in diverse applications involving adsorption and catalysis; while it remains a big challenge for the synthesis and regulation of zeolites with exceptional morphology/porosity only through inorganic-ions-based modification. Herein, by simply optimizing the alkali metal type (K⁺ or Na⁺), as well as alkali/water ratio and crystallization temperature, the zeolite ZSM-5 mesocrystals with diverse mesostructures are simply and controllably prepared via fine-tuning the crystallization mechanism in an organotemplate-free, ions-mediated seed-assisted system. Moreover, the impacts of these key parameters on the evolution of seed crystals, the development and assembly behavior of aluminosilicate species and the solution-phase process during zeolite crystallization are investigated by means of directional etching in NH₄F or NaOH solutions. Except for the morphology/mesoporosity modulation, their physical and chemical properties, such as particle size, microporosity, Si/Al ratio and acidity, can be well maintained at a similar level. As such, the p/o-xylene adsorption and catalytic performance of o-xylene isomerization are used to exhaustively evaluate the synergistically enhanced catalytic activity and shape selectivity of the obtained products. This work demonstrates the possibility of effectively constructing novel zeolite mesostructures by simply altering parameters on simple ions-controlled crystallization and provides good models to inspect the impacts of mesoporosity or morphology on their catalytic performances. Full article

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO₄ and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication. Full article

Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst by lithographic techniques facilitated the patterning of crystalline and polycrystalline wafer substrates. Galvanic deposition of metals on semiconductors has a natural tendency to produce nanoparticles rather than flat uniform films. This characteristic makes possible the etching of wafers and particles with arbitrary shape and size. While it has been widely recognized that spontaneous deposition of metal nanoparticles can be used in connection with etching to porosify wafers, it is also possible to produced nanostructured powders. Metal-assisted catalytic etching (MACE) can be controlled to produce (1) etch track pores with shapes and sizes closely related to the shape and size of the metal nanoparticle, (2) hierarchically porosified substrates exhibiting combinations of large etch track pores and mesopores, and (3) nanowires with either solid or mesoporous cores. This review discussed the mechanisms of porosification, processing advances, and the properties of the etch product with special emphasis on the etching of silicon powders. Full article

Structural and electronic properties of silicon nanowires with pre-designed structures are investigated. Wires with distinct structure were investigated via advanced spectroscopic techniques such as X-ray absorption spectroscopy and Raman scattering as well as transport measurements. We show that wire structures can be engineered with metal assisted etching fabrication process via the catalytic solution ratios as well as changing doping type and level. In this way unique well-defined electronic configurations and density of states are obtained in the synthesized wires leading to different charge carrier and phonon dynamics in addition to photoluminescence modulations. We demonstrate that the electronic properties of these structures depend by the final geometry of these systems as determined by the synthesis process. These wires are characterized by a large internal surface and a modulated DOS with a significantly high number of surface states within the band structure. The results improve the understanding of the different electronic structures of these semiconducting nanowires opening new possibilities of future advanced device designs. Full article

Electrocatalysts are becoming increasingly important for both energy conversion and environmental catalysis. Plasma technology can realize surface etching and heteroatom doping, and generate highly dispersed components and redox species to increase the exposure of the active edge sites so as to improve the surface utilization and catalytic activity. This review summarizes the recent plasma-assisted preparation methods of noble metal catalysts, non-noble metal catalysts, non-metal catalysts, and other electrochemical catalysts, with emphasis on the characteristics of plasma-assisted methods. The influence of the morphology, structure, defect, dopant, and other factors on the catalytic performance of electrocatalysts is discussed. Full article

We introduce a non-lithographical and vacuum-free method to pattern silicon. The method combines inkjet printing and metal assisted chemical etching (MaCE); we call this method “INKMAC”. A commercial silver ink is printed on top of a silicon surface to create the catalytic patterns for MaCE. The MaCE process leaves behind a set of silicon nanowires in the shape of the inkjet printed micrometer scale pattern. We further show how a potassium hydroxide (KOH) wet etching process can be used to rapidly etch away the nanowires, producing fully opened cavities and channels in the shape of the original printed pattern. We show how the printed lines (width 50–100 µm) can be etched into functional silicon microfluidic channels with different depths (10–40 µm) with aspect ratios close to one. We also used individual droplets (minimum diameter 30 µm) to produce cavities with a depth of 60 µm and an aspect ratio of two. Further, we discuss using the structured silicon substrate as a template for polymer replication to produce superhydrophobic surfaces. Full article