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Engineering Porous Silicon Nanowires with Tuneable Electronic Properties

School of science and technology, Physics division, University of Camerino, Via Madonna delle Carceri 9, 62032 Camerino, Italy
Istituto Nazionale di Fisica Nucleare - Laboratori Nazionali di Fisica Nucleare, Via Enrico Fermi 54, 00044 Frascati, Italy
Consiglio Nazionale delle Ricerche (IOM), Edificio Q2, Area Science Park, Strada Statale 14, km 163,5, 34149 Basovizza, Italy
International Centre for Material Science Superstripes, RICMASS, via dei Sabelli 119A, 00185 Rome, Italy
Author to whom correspondence should be addressed.
Condens. Matter 2020, 5(4), 57;
Received: 4 August 2020 / Revised: 23 September 2020 / Accepted: 24 September 2020 / Published: 28 September 2020
(This article belongs to the Special Issue Quantum Complex Matter 2020)
Structural and electronic properties of silicon nanowires with pre-designed structures are investigated. Wires with distinct structure were investigated via advanced spectroscopic techniques such as X-ray absorption spectroscopy and Raman scattering as well as transport measurements. We show that wire structures can be engineered with metal assisted etching fabrication process via the catalytic solution ratios as well as changing doping type and level. In this way unique well-defined electronic configurations and density of states are obtained in the synthesized wires leading to different charge carrier and phonon dynamics in addition to photoluminescence modulations. We demonstrate that the electronic properties of these structures depend by the final geometry of these systems as determined by the synthesis process. These wires are characterized by a large internal surface and a modulated DOS with a significantly high number of surface states within the band structure. The results improve the understanding of the different electronic structures of these semiconducting nanowires opening new possibilities of future advanced device designs. View Full-Text
Keywords: nanowires; semiconductors; Raman; electronic structure; X-ray absorption spectroscopy nanowires; semiconductors; Raman; electronic structure; X-ray absorption spectroscopy
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MDPI and ACS Style

Rezvani, S.J.; Pinto, N.; Gunnella, R.; D’Elia, A.; Marcelli, A.; Di Cicco, A. Engineering Porous Silicon Nanowires with Tuneable Electronic Properties. Condens. Matter 2020, 5, 57.

AMA Style

Rezvani SJ, Pinto N, Gunnella R, D’Elia A, Marcelli A, Di Cicco A. Engineering Porous Silicon Nanowires with Tuneable Electronic Properties. Condensed Matter. 2020; 5(4):57.

Chicago/Turabian Style

Rezvani, S. J., Nicola Pinto, Roberto Gunnella, Alessandro D’Elia, Augusto Marcelli, and Andrea Di Cicco. 2020. "Engineering Porous Silicon Nanowires with Tuneable Electronic Properties" Condensed Matter 5, no. 4: 57.

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