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Keywords = ion-sensitive field-effect transistors (ISFETs)

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15 pages, 3579 KiB  
Article
Dual-Control-Gate Reconfigurable Ion-Sensitive Field-Effect Transistor with Nickel-Silicide Contacts for Adaptive and High-Sensitivity Chemical Sensing Beyond the Nernst Limit
by Seung-Jin Lee, Seung-Hyun Lee, Seung-Hwa Choi and Won-Ju Cho
Chemosensors 2025, 13(8), 281; https://doi.org/10.3390/chemosensors13080281 - 2 Aug 2025
Viewed by 176
Abstract
In this study, we propose a bidirectional chemical sensor platform based on a reconfigurable ion-sensitive field-effect transistor (R-ISFET) architecture. The device incorporates Ni-silicide Schottky barrier source/drain (S/D) contacts, enabling ambipolar conduction and bidirectional turn-on behavior for both p-type and n-type configurations. Channel polarity [...] Read more.
In this study, we propose a bidirectional chemical sensor platform based on a reconfigurable ion-sensitive field-effect transistor (R-ISFET) architecture. The device incorporates Ni-silicide Schottky barrier source/drain (S/D) contacts, enabling ambipolar conduction and bidirectional turn-on behavior for both p-type and n-type configurations. Channel polarity is dynamically controlled via the program gate (PG), while the control gate (CG) suppresses leakage current, enhancing operational stability and energy efficiency. A dual-control-gate (DCG) structure enhances capacitive coupling, enabling sensitivity beyond the Nernst limit without external amplification. The extended-gate (EG) architecture physically separates the transistor and sensing regions, improving durability and long-term reliability. Electrical characteristics were evaluated through transfer and output curves, and carrier transport mechanisms were analyzed using band diagrams. Sensor performance—including sensitivity, hysteresis, and drift—was assessed under various pH conditions and external noise up to 5 Vpp (i.e., peak-to-peak voltage). The n-type configuration exhibited high mobility and fast response, while the p-type configuration demonstrated excellent noise immunity and low drift. Both modes showed consistent sensitivity trends, confirming the feasibility of complementary sensing. These results indicate that the proposed R-ISFET sensor enables selective mode switching for high sensitivity and robust operation, offering strong potential for next-generation biosensing and chemical detection. Full article
(This article belongs to the Section Electrochemical Devices and Sensors)
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20 pages, 7435 KiB  
Article
Portable Impedance Analyzer for FET-Based Biosensors with Embedded Analysis of Randles Circuits’ Spectra
by Norman Pfeiffer, Martin Bach, Alice Steiner, Anna-Elisabeth Gerhardt, Joan Bausells, Abdelhamid Errachid and Albert Heuberger
Sensors 2025, 25(11), 3497; https://doi.org/10.3390/s25113497 - 31 May 2025
Viewed by 810
Abstract
The electrochemical impedance spectroscopy (EIS) is a measurement method for characterizing bio-recognition events of a sensor, such as field-effect transistor-based biosensors (BioFETs). Due to the lack of portable impedance spectroscopes, EIS applies mainly in laboratories preventing application-oriented use in the field. This work [...] Read more.
The electrochemical impedance spectroscopy (EIS) is a measurement method for characterizing bio-recognition events of a sensor, such as field-effect transistor-based biosensors (BioFETs). Due to the lack of portable impedance spectroscopes, EIS applies mainly in laboratories preventing application-oriented use in the field. This work presents a portable impedance analyzer (PIA) providing a 4-channel EIS of BioFETs. It performs the analysis of the recorded spectra by determining the charge transfer resistance Rct with a power-saving algorithm. Therefore, a circle is fitted into the Nyquist representation of the Randles circuit, from whose zero crossings Rct can be determined. The introduced algorithm was evaluated on 100 simulated spectra of Randles circuits. To analyze the overall system, an adjustable reference circuit was developed that simulates configurable Randles circuits. Additional measurements with pH-sensitive ion-sensitive field-effect transistors (ISFETs) demonstrate the application of the measurement system with electrochemical sensors. Using simulated spectra, the circular fitting is able to detect Rct with a median accuracy of 1.2% at an average nominal power of 40 mW and 3054 µs computing time. The PIA with the embedded implementation of the circuit fitting achieves a median error for Rct of 4.2% using the introduced Randles circuit simulator (RCS). Measurements with ISFETs show deviations of 6.5 ± 2.8% compared to the complex non-linear least squares (CNLS), but is significantly faster and more efficient. The presented system allows a portable, power-saving performance of EIS. Future optimizations for a specific applications can improve the presented system and enable novel low-power and automated measurements of biosensors outside the laboratory. Full article
(This article belongs to the Section Biosensors)
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33 pages, 8045 KiB  
Review
A Review of Readout Circuit Schemes Using Silicon Nanowire Ion-Sensitive Field-Effect Transistors for pH-Sensing Applications
by Jungho Joo, Hyunsun Mo, Seungguk Kim, Seonho Shin, Ickhyun Song and Dae Hwan Kim
Biosensors 2025, 15(4), 206; https://doi.org/10.3390/bios15040206 - 22 Mar 2025
Viewed by 801
Abstract
This paper reviews various design approaches for sensing schemes that utilize silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs) for pH-sensing applications. SiNW ISFETs offer advantageous characteristics, including a high surface-to-volume ratio, fast response time, and suitability for integration with complementary metal oxide semiconductor [...] Read more.
This paper reviews various design approaches for sensing schemes that utilize silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs) for pH-sensing applications. SiNW ISFETs offer advantageous characteristics, including a high surface-to-volume ratio, fast response time, and suitability for integration with complementary metal oxide semiconductor (CMOS) technology. This review focuses on SiNW ISFET-based biosensors in three key aspects: (1) major fabrication processes and device structures; (2) theoretical analysis of key performance parameters in readout circuits such as sensitivity, linearity, noise immunity, and output range in different system configurations; and (3) an overview of existing readout circuits with quantitative evaluations of N-type and P-type current-mirror-based circuits, highlighting their strengths and limitations. Finally, this paper proposes a modified N-type readout scheme integrating an operational amplifier with a negative feedback network to overcome the low sensitivity of conventional N-type circuits. This design enhances gain control, linearity, and noise immunity while maintaining stability. These advancements are expected to contribute to the advancement of the current state-of-the-art SiNW ISFET-based readout circuits. Full article
(This article belongs to the Special Issue Biosensors Based on Transistors)
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13 pages, 2958 KiB  
Article
ISFET Biosensor with Loop-Mediated Isothermal Amplification for Electronic Rapid Detection of Mycoplasma Pneumoniae
by Jie Zou, Jie Hu, Yan Shen, Limei Zhang, Weiyi Bai, Lei Wang, Jianlong Li, Lin Yan, Zhifeng Zhang, Hao Bai and Wenchuang Hu
Sensors 2025, 25(5), 1562; https://doi.org/10.3390/s25051562 - 4 Mar 2025
Cited by 1 | Viewed by 1376
Abstract
Mycoplasma pneumoniae (MP) is the main culprit of community-acquired pneumonia. Commonly used laboratory testing methods have many shortcomings. Serological diagnosis has low sensitivity, causing false negatives, while a quantitative real-time polymerase chain reaction (qPCR) requires large equipment and professional staff. To make up [...] Read more.
Mycoplasma pneumoniae (MP) is the main culprit of community-acquired pneumonia. Commonly used laboratory testing methods have many shortcomings. Serological diagnosis has low sensitivity, causing false negatives, while a quantitative real-time polymerase chain reaction (qPCR) requires large equipment and professional staff. To make up for these shortcomings, we proposed a label-free, low-cost, and small-sized ion-sensitive field-effect transistor (ISFET) array based on a low-buffered loop-mediated isothermal amplification (LAMP) assay. A complementary metal oxide semiconductor (CMOS)-based ISFET array with 512 × 512 sensors was used in this system, which responds specifically to H+ with a sensitivity of 365.7 mV/pH. For on-chip amplification, a low-buffered LAMP system designed for the conserved sequences of two genes, CARDS and gyrB, was applied. The rapid release of large amounts of H+ in the low-buffered LAMP solution led to a speedy increase in electrical signals captured by the ISFET array, eliminating the need for a sophisticated temperature cycling and optical system. The on-chip results showed that the device can accurately complete MP detection with a detection limit of about 103 copies/mL (approximately 1 copy per reaction). In the final clinical validation, the detection results of eight throat swab samples using the ISFET sensors were fully consistent with the clinical laboratory diagnostic outcomes, confirming the accuracy and reliability of the ISFET sensors for use in clinical settings. And the entire process from sample lysis to result interpretation takes about 60 min. This platform has potential to be used for the point-of-care testing (POCT) of pathogen infections, providing a basis for the timely adjustment of diagnosis and treatment plans. Full article
(This article belongs to the Section Biosensors)
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21 pages, 8007 KiB  
Article
Machine Learning-Based Modeling of pH-Sensitive Silicon Nanowire (SiNW) for Ion Sensitive Field Effect Transistor (ISFET)
by Nabil Ayadi, Ahmet Lale, Bekkay Hajji, Jérôme Launay and Pierre Temple-Boyer
Sensors 2024, 24(24), 8091; https://doi.org/10.3390/s24248091 - 18 Dec 2024
Cited by 1 | Viewed by 1164
Abstract
The development of ion-sensitive field-effect transistor (ISFET) sensors based on silicon nanowires (SiNW) has recently seen significant progress, due to their many advantages such as compact size, low cost, robustness and real-time portability. However, little work has been done to predict the performance [...] Read more.
The development of ion-sensitive field-effect transistor (ISFET) sensors based on silicon nanowires (SiNW) has recently seen significant progress, due to their many advantages such as compact size, low cost, robustness and real-time portability. However, little work has been done to predict the performance of SiNW-ISFET sensors. The present study focuses on predicting the performance of the silicon nanowire (SiNW)-based ISFET sensor using four machine learning techniques, namely multilayer perceptron (MLP), nonlinear regression (NLR), support vector regression (SVR) and extra tree regression (ETR). The proposed ML algorithms are trained and validated using experimental measurements of the SiNW-ISFET sensor. The results obtained show a better predictive ability of extra tree regression (ETR) compared to other techniques, with a low RMSE of 1 × 10−3 mA and an R2 value of 0.9999725. This prediction study corrects the problems associated with SiNW -ISFET sensors. Full article
(This article belongs to the Section Electronic Sensors)
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13 pages, 2759 KiB  
Article
Monitoring of Ammonium and Nitrate Ions in Soil Using Ion-Sensitive Potentiometric Microsensors
by Matthieu Joly, Maurane Marlet, David Barreau, Arnaud Jourdan, Céline Durieu, Jérôme Launay and Pierre Temple-Boyer
Sensors 2024, 24(22), 7143; https://doi.org/10.3390/s24227143 - 6 Nov 2024
Cited by 2 | Viewed by 1469
Abstract
Focusing on the ChemFET (chemical field-effect transistor) technology, the development of a multi-microsensor platform for soil analysis is described in this work. Thus, different FET-based microdevices (i.e., pH-ChemFET pNH4-ISFET and pNO3-ISFET sensors) were realized with the aim of monitoring [...] Read more.
Focusing on the ChemFET (chemical field-effect transistor) technology, the development of a multi-microsensor platform for soil analysis is described in this work. Thus, different FET-based microdevices (i.e., pH-ChemFET pNH4-ISFET and pNO3-ISFET sensors) were realized with the aim of monitoring nitrogen-based ionic species in soil, evidencing quasi-Nernstian detection properties (>50 mV/decade) in appropriate concentration ranges for agricultural applications. Using a specific test bench adapted to important earth samples (mass: ~50 kg), first experiments were done in a lab, mimicking rainy periods as well as nitrogen-based fertilizer inputs. By monitoring pH, pNH4, and pNO3 in an acidic (pH ≈ 4.7) clay-silt soil matrix, different processes associated to the nitrogen cycle were characterized over a fortnight, demonstrating comprehensive results for ammonium nitrate NH4NO3 inputs at different concentrations, water additions, nitrification phenomena, and ammonium NH4+ ion trapping. Even if the ChemFET-based measurement system should be improved according to the soil(electrolyte)/sensor contact, such realizations and results show the ChemFET technology potentials for long-term analysis in soil, paving the way for future “in situ” approaches in the frame of modern farming. Full article
(This article belongs to the Section Chemical Sensors)
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32 pages, 8768 KiB  
Review
Sensing with Molecularly Imprinted Membranes on Two-Dimensional Solid-Supported Substrates
by Lishuang Wang, Nan Li, Xiaoyan Zhang, Ivan Bobrinetskiy, Ivana Gadjanski and Wangyang Fu
Sensors 2024, 24(16), 5119; https://doi.org/10.3390/s24165119 - 7 Aug 2024
Viewed by 1975
Abstract
Molecularly imprinted membranes (MIMs) have been a focal research interest since 1990, representing a breakthrough in the integration of target molecules into membrane structures for cutting-edge sensing applications. This paper traces the developmental history of MIMs, elucidating the diverse methodologies employed in their [...] Read more.
Molecularly imprinted membranes (MIMs) have been a focal research interest since 1990, representing a breakthrough in the integration of target molecules into membrane structures for cutting-edge sensing applications. This paper traces the developmental history of MIMs, elucidating the diverse methodologies employed in their preparation and characterization on two-dimensional solid-supported substrates. We then explore the principles and diverse applications of MIMs, particularly in the context of emerging technologies encompassing electrochemistry, surface-enhanced Raman scattering (SERS), surface plasmon resonance (SPR), and the quartz crystal microbalance (QCM). Furthermore, we shed light on the unique features of ion-sensitive field-effect transistor (ISFET) biosensors that rely on MIMs, with the notable advancements and challenges of point-of-care biochemical sensors highlighted. By providing a comprehensive overview of the latest innovations and future trajectories, this paper aims to inspire further exploration and progress in the field of MIM-driven sensing technologies. Full article
(This article belongs to the Special Issue Biosensors for Point-of-Care Diagnostics)
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13 pages, 2616 KiB  
Article
Enhancement of Ion-Sensitive Field-Effect Transistors through Sol-Gel Processed Lead Zirconate Titanate Ferroelectric Film Integration and Coplanar Gate Sensing Paradigm
by Dong-Gyun Mah, Seong-Moo Oh, Jongwan Jung and Won-Ju Cho
Chemosensors 2024, 12(7), 134; https://doi.org/10.3390/chemosensors12070134 - 9 Jul 2024
Cited by 2 | Viewed by 1714
Abstract
To facilitate the utility of field effect transistor (FET)-type sensors, achieving sensitivity enhancement beyond the Nernst limit is crucial. Thus, this study proposed a novel approach for the development of ferroelectric FETs (FeFETs) using lead zirconate titanate (PZT) ferroelectric films integrated with indium–tungsten [...] Read more.
To facilitate the utility of field effect transistor (FET)-type sensors, achieving sensitivity enhancement beyond the Nernst limit is crucial. Thus, this study proposed a novel approach for the development of ferroelectric FETs (FeFETs) using lead zirconate titanate (PZT) ferroelectric films integrated with indium–tungsten oxide (IWO) channels synthesized via a cost-effective sol-gel process. The electrical properties of PZT-IWO FeFET devices were significantly enhanced through the strategic implementation of PZT film treatment by employing intentional annealing procedures. Consequently, key performance metrics, including the transfer curve on/off ratio and subthreshold swings, were improved. Moreover, unprecedented electrical stability was realized by eliminating the hysteresis effect during double sweeps. By leveraging a single-gate configuration as an FeFET transformation element, extended-gate (EG) detection methodologies for pH sensing were explored, thereby introducing a pioneering dimension to sensor architecture. A measurement paradigm inspired by plane gate work was adopted, and the proposed device exhibited significant resistive coupling, consequently surpassing the sensitivity thresholds of conventional ion-sensitive field-effect transistors. This achievement represents a substantial paradigm shift in the landscape of ion-sensing methodologies, surpassing the established Nernst limit (59.14 mV/pH). Furthermore, this study advances FeFET technology and paves the way for the realization of highly sensitive and reliable ion sensing modalities. Full article
(This article belongs to the Collection pH Sensors, Biosensors and Systems)
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12 pages, 3735 KiB  
Article
Detection of α-Galactosidase A Reaction in Samples Extracted from Dried Blood Spots Using Ion-Sensitive Field Effect Transistors
by Alexander Kuznetsov, Andrey Sheshil, Eugene Smolin, Vitaliy Grudtsov, Dmitriy Ryazantsev, Mark Shustinskiy, Tatiana Tikhonova, Irakli Kitiashvili, Valerii Vechorko and Natalia Komarova
Sensors 2024, 24(11), 3681; https://doi.org/10.3390/s24113681 - 6 Jun 2024
Cited by 3 | Viewed by 1533
Abstract
Fabry disease is a lysosomal storage disorder caused by a significant decrease in the activity or absence of the enzyme α-galactosidase A. The diagnostics of Fabry disease during newborn screening are reasonable, due to the availability of enzyme replacement therapy. This paper presents [...] Read more.
Fabry disease is a lysosomal storage disorder caused by a significant decrease in the activity or absence of the enzyme α-galactosidase A. The diagnostics of Fabry disease during newborn screening are reasonable, due to the availability of enzyme replacement therapy. This paper presents an electrochemical method using complementary metal-oxide semiconductor (CMOS)-compatible ion-sensitive field effect transistors (ISFETs) with hafnium oxide-sensitive surfaces for the detection of α-galactosidase A activity in dried blood spot extracts. The capability of ISFETs to detect the reaction catalyzed by α-galactosidase A was demonstrated. The buffer composition was optimized to provide suitable conditions for both enzyme and ISFET performance. The use of ISFET structures as sensor elements allowed for the label-free detection of enzymatic reactions with melibiose, a natural substrate of α-galactosidase A, instead of a synthetic fluorogenic one. ISFET chips were packaged with printed circuit boards and microfluidic reaction chambers to enable long-term signal measurement using a custom device. The packaged sensors were demonstrated to discriminate between normal and inhibited GLA activity in dried blood spots extracts. The described method offers a promising solution for increasing the widespread distribution of newborn screening of Fabry disease. Full article
(This article belongs to the Special Issue Advances in Electrochemical Sensors for Bioanalysis)
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16 pages, 3714 KiB  
Article
A Portable Readout System for Biomarker Detection with Aptamer-Modified CMOS ISFET Array
by Dmitriy Ryazantsev, Mark Shustinskiy, Andrey Sheshil, Alexey Titov, Vitaliy Grudtsov, Valerii Vechorko, Irakli Kitiashvili, Kirill Puchnin, Alexander Kuznetsov and Natalia Komarova
Sensors 2024, 24(10), 3008; https://doi.org/10.3390/s24103008 - 9 May 2024
Cited by 4 | Viewed by 1831
Abstract
Biosensors based on ion-sensitive field effect transistors (ISFETs) combined with aptamers offer a promising and convenient solution for point-of-care testing applications due to the ability for fast and label-free detection of a wide range of biomarkers. Mobile and easy-to-use readout devices for the [...] Read more.
Biosensors based on ion-sensitive field effect transistors (ISFETs) combined with aptamers offer a promising and convenient solution for point-of-care testing applications due to the ability for fast and label-free detection of a wide range of biomarkers. Mobile and easy-to-use readout devices for the ISFET aptasensors would contribute to further development of the field. In this paper, the development of a portable PC-controlled device for detecting aptamer-target interactions using ISFETs is described. The device assembly allows selective modification of individual ISFETs with different oligonucleotides. Ta2O5-gated ISFET structures were optimized to minimize trapped charge and capacitive attenuation. Integrated CMOS readout circuits with linear transfer function were used to minimize the distortion of the original ISFET signal. An external analog signal digitizer with constant voltage and superimposed high-frequency sine wave reference voltage capabilities was designed to increase sensitivity when reading ISFET signals. The device performance was demonstrated with the aptamer-driven detection of troponin I in both reference voltage setting modes. The sine wave reference voltage measurement method reduced the level of drift over time and enabled a lowering of the minimum detectable analyte concentration. In this mode (constant voltage 2.4 V and 10 kHz 0.1Vp-p), the device allowed the detection of troponin I with a limit of detection of 3.27 ng/mL. Discrimination of acute myocardial infarction was demonstrated with the developed device. The ISFET device provides a platform for the multiplexed detection of different biomarkers in point-of-care testing. Full article
(This article belongs to the Special Issue Micro/Nano Biosensors and Devices)
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3 pages, 794 KiB  
Abstract
New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing
by Olfa Karker, Konstantinos Zekentes, Nicolaos Makris, Edwige Bano and Valérie Stambouli
Proceedings 2024, 97(1), 98; https://doi.org/10.3390/proceedings2024097098 - 26 Mar 2024
Viewed by 818
Abstract
For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for [...] Read more.
For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for biochemical sensing due to the lack of long-term stability of Si NWs in aqueous solutions. More particularly, we fabricated a micro/nanowire SiC-based ion-sensitive junction field-effect transistor (SiC-ISJFET) and studied its sensitivity to pH variations. The obtained sensitivity reaches 500 mV/pH, making it the first SiC pH sensor with performance equaling that of the latest NWFET Si-based pH sensors. Full article
(This article belongs to the Proceedings of XXXV EUROSENSORS Conference)
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3 pages, 1347 KiB  
Abstract
Multi-Micro-Sensor Platform for Monitoring Toxic Algal Blooms and Pollution in Coastal Marine Waters: Transducer Integration in Micro-Technology
by Pierre Groc, Guy Cathébras, Vincent Kerzerho, Adrian Laborde, Fabien Soulier, Pierre Temple-Boyer, Jérôme Launay and Serge Bernard
Proceedings 2024, 97(1), 94; https://doi.org/10.3390/proceedings2024097094 - 25 Mar 2024
Viewed by 872
Abstract
This work presents the design of a multisensor platform for the in situ monitoring of physico-chemical parameters in seawater. As a result, we propose an 8.5 × 8.5 mm2 silicon chip that integrates a MOSFET and two ISFETs (Metal Oxide Semiconductor and [...] Read more.
This work presents the design of a multisensor platform for the in situ monitoring of physico-chemical parameters in seawater. As a result, we propose an 8.5 × 8.5 mm2 silicon chip that integrates a MOSFET and two ISFETs (Metal Oxide Semiconductor and Ion-Sensitive Field-Effect Transistor) and four microelectrodes (two Ag electrodes and two Pt electrodes). The device allows measurements to be taken in liquid phase of temperature, pH, nitrate concentrations and conductivity. These silicon transducers could be integrated with conditioning electronics to achieve an autonomous environmental sensor device. Full article
(This article belongs to the Proceedings of XXXV EUROSENSORS Conference)
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14 pages, 2596 KiB  
Article
Enhanced BSA Detection Precision: Leveraging High-Performance Dual-Gate Ion-Sensitive Field-Effect-Transistor Scheme and Surface-Treated Sensing Membranes
by Yeong-Ung Kim and Won-Ju Cho
Biosensors 2024, 14(3), 141; https://doi.org/10.3390/bios14030141 - 13 Mar 2024
Cited by 4 | Viewed by 2348
Abstract
Bovine serum albumin (BSA) is commonly incorporated in vaccines to improve stability. However, owing to potential allergic reactions in humans, the World Health Organization (WHO) mandates strict adherence to a BSA limit (≤50 ng/vaccine). BSA detection with conventional techniques is time-consuming and requires [...] Read more.
Bovine serum albumin (BSA) is commonly incorporated in vaccines to improve stability. However, owing to potential allergic reactions in humans, the World Health Organization (WHO) mandates strict adherence to a BSA limit (≤50 ng/vaccine). BSA detection with conventional techniques is time-consuming and requires specialized equipment. Efficient alternatives such as the ion-sensitive field-effect transistor (ISFET), despite rapid detection, affordability, and portability, do not detect BSA at low concentrations because of inherent sensitivity limitations. This study proposes a silicon-on-insulator (SOI) substrate-based dual-gate (DG) ISFET platform to overcome these limitations. The capacitive coupling DG structure significantly enhances sensitivity without requiring external circuits, owing to its inherent amplification effect. The extended-gate (EG) structure separates the transducer unit for electrical signal processing from the sensing unit for biological detection, preventing chemical damage to the transducer, accommodating a variety of biological analytes, and affording easy replaceability. Vapor-phase surface treatment with (3-Aminopropyl) triethoxysilane (APTES) and the incorporation of a SnO2 sensing membrane ensure high BSA detection efficiency and sensitivity (144.19 mV/log [BSA]). This DG-FET-based biosensor possesses a simple structure and detects BSA at low concentrations rapidly. Envisioned as an effective on-site diagnostic tool for various analytes including BSA, this platform addresses prior limitations in biosensing and shows promise for practical applications. Full article
(This article belongs to the Special Issue Transistor‐Based Biosensors: From Theory to Real Devices)
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13 pages, 3307 KiB  
Article
Smart pH Sensing: A Self-Sensitivity Programmable Platform with Multi-Functional Charge-Trap-Flash ISFET Technology
by Yeong-Ung Kim and Won-Ju Cho
Sensors 2024, 24(3), 1017; https://doi.org/10.3390/s24031017 - 4 Feb 2024
Cited by 1 | Viewed by 2146
Abstract
This study presents a novel pH sensor platform utilizing charge-trap-flash-type metal oxide semiconductor field-effect transistors (CTF-type MOSFETs) for enhanced sensitivity and self-amplification. Traditional ion-sensitive field-effect transistors (ISFETs) face challenges in commercialization due to low sensitivity at room temperature, known as the Nernst limit. [...] Read more.
This study presents a novel pH sensor platform utilizing charge-trap-flash-type metal oxide semiconductor field-effect transistors (CTF-type MOSFETs) for enhanced sensitivity and self-amplification. Traditional ion-sensitive field-effect transistors (ISFETs) face challenges in commercialization due to low sensitivity at room temperature, known as the Nernst limit. To overcome this limitation, we explore resistive coupling effects and CTF-type MOSFETs, allowing for flexible adjustment of the amplification ratio. The platform adopts a unique approach, employing CTF-type MOSFETs as both transducers and resistors, ensuring efficient sensitivity control. An extended-gate (EG) structure is implemented to enhance cost-effectiveness and increase the overall lifespan of the sensor platform by preventing direct contact between analytes and the transducer. The proposed pH sensor platform demonstrates effective sensitivity control at various amplification ratios. Stability and reliability are validated by investigating non-ideal effects, including hysteresis and drift. The CTF-type MOSFETs’ electrical characteristics, energy band diagrams, and programmable resistance modulation are thoroughly characterized. The results showcase remarkable stability, even under prolonged and repetitive operations, indicating the platform’s potential for accurate pH detection in diverse environments. This study contributes a robust and stable alternative for detecting micro-potential analytes, with promising applications in health management and point-of-care settings. Full article
(This article belongs to the Special Issue Biosensors and Electrochemical Sensors)
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12 pages, 7695 KiB  
Article
pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach
by Yann Sprunger, Luca Capua, Thomas Ernst, Sylvain Barraud, Didier Locca, Adrian Ionescu and Ali Saeidi
Biosensors 2023, 13(10), 908; https://doi.org/10.3390/bios13100908 - 27 Sep 2023
Cited by 7 | Viewed by 2913
Abstract
In this paper, we propose a novel approach to utilize silicon nanowires as high-sensitivity pH sensors. Our approach works based on fixing the current bias of silicon nanowires Ion Sensitive Field Effect Transistors (ISFETs) and monitor the resulting drain voltage as the sensing [...] Read more.
In this paper, we propose a novel approach to utilize silicon nanowires as high-sensitivity pH sensors. Our approach works based on fixing the current bias of silicon nanowires Ion Sensitive Field Effect Transistors (ISFETs) and monitor the resulting drain voltage as the sensing signal. By fine tuning the injected current levels, we can optimize the sensing conditions according to different sensor requirements. This method proves to be highly suitable for real-time and continuous measurements of biomarkers in human biofluids. To validate our approach, we conducted experiments, with real human sera samples to simulate the composition of human interstitial fluid (ISF), using both the conventional top-gate approach and the optimized constant current method. We successfully demonstrated pH sensing within the physiopathological range of 6.5 to 8, achieving an exceptional level of accuracy in this complex matrix. Specifically, we obtained a maximum error as low as 0.92% (equivalent to 0.07 pH unit) using the constant-current method at the optimal current levels (1.71% for top-gate). Moreover, by utilizing different pools of human sera with varying total protein content, we demonstrated that the protein content among patients does not impact the sensors’ performance in pH sensing. Furthermore, we tested real-human ISF samples collected from volunteers. The obtained accuracy in this scenario was also outstanding, with an error as low as 0.015 pH unit using the constant-current method and 0.178 pH unit in traditional top-gate configuration. Full article
(This article belongs to the Special Issue Construction of Biosensors Using Nano- and Microtechnology)
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