Search Results (48)

The nanostructural features of a mechanically alloyed Sb-doped (Ti_0.4Zr_0.6)_0.7Hf_0.3NiSn thermoelectric (TE) Half-Heusler (HH) compound were addressed using Transmission Electron Microscopy (TEM) coupled with Energy Dispersive Spectroscopy measurements and Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy. The EXAFS measurements at the Ni-K, Sn-K, Zr-K, and Hf-L₃-edge were implemented in an effort to reveal the influence of Hf and Zr incorporation into the crystal with respect to their previously measured TE properties. The substitution of Ti by Hf and Zr is expected to yield local lattice distortions due to the different atomic sizes of the dopants or/and electronic charge redistribution amongst the cations. However, the material is characterised by a high degree of crystallinity in both the short and long-range order, on average, and the nominal stoichiometry is identified as (Zr_0.42Hf_0.30Ti_0.28)NiSn_0.98Sb_0.02. The synergistic effect of minimization of extended structural defects or lattice distortions and considerable alloying-induced point defect population contributes to the improved TE properties and leads to the previously reported enhancement of the figure of merit of the mixed HHs. Full article

Heusler compounds and alloys constitute a burgeoning class of materials with exceptional properties, holding immense promise for advanced technologies. Electronic band structure calculations are instrumental in driving research in this field. Nowotny–Juza compounds are similar to Semi-Heusler compounds containing one instead of two transition metal atoms in their chemical formula. Recently, they have been widely referred to as “$p^0$-d or $d^0$-d Semi-Heusler compounds”. Building upon our previous studies on $p^0$-d or $d^0$-d Semi-Heusler compounds featuring Li or K, we now explore a new class of $d^0$-d compounds incorporating alkaline earth metals and more specifically Mg which is well-known to occupy all possible sites in Heusler compounds. These compounds, with the general formula MgZ(Ga, Ge, or As), where Z is a transition metal, are investigated for their structural, electronic, and magnetic properties, specifically within the context of the three possible $C{1}_{\mathrm{b}}$ structures including also the effect of tetragonalization which is shown not to affect the equilibrium cubic type. Our findings demonstrate that a significant number of these compounds exhibit magnetic behavior, with several displaying half-metallicity, making them highly attractive for spintronic applications. This research provides a crucial foundation for future experimental investigations into these promising materials. Full article

This research aimed to explore the structural, electronic, mechanical, and vibrational properties of double half Heusler compounds with the generic formula Ti₂Pt₂ZSb (Z = Al, Ga, and In), using density functional theory calculations. The generalized gradient approximation within the PBE functional was employed for structural relaxation and for calculations of vibrational and mechanical properties and thermal conductivity, while the hybrid HSE06 functional was employed for calculations of the electronic properties. Our results demonstrate that these compounds are energetically favorable and dynamically and mechanically stable. Our electronic structure calculations revealed that the Ti₂Pt₂AlSb double half Heusler compound is a non-magnetic semiconductor with an indirect band gap of 1.49 eV, while Ti₂Pt₂GaSb and Ti₂Pt₂InSb are non-magnetic semiconductors with direct band gaps of 1.40 eV. Further analysis, including phonon dispersion curves, the electron localization function (ELF), and Bader charge analysis, provided insights into the bonding character and vibrational properties of these materials. These findings suggest that double half Heusler compounds are promising candidates for thermoelectric device applications and energy-conversion devices, due to their favorable properties. Full article

Half-Heusler alloys are promising materials for thermoelectric applications, yet the impact of the compositional disorder on their lattice dynamics remains incompletely understood. This study investigates the effect of systematic Zr substitution on the lattice dynamics and thermal properties of Ti_xZr_1-xNiSn half-Heusler alloys using first-principles calculations. Through careful analysis of phonon dispersions, density of states, and thermodynamic properties, it is revealed that Zr substitution (25%, 50%, and 75%) introduces minimal structural distortion while enhancing system stability. It is shown that increasing Zr content systematically modifies the phonons, particularly affecting the high-frequency optical modes above 5 THz. Notably, with Zr content, these findings provide valuable insights for tailoring the thermal properties of half-Heusler alloys for high-temperature applications in thermoelectric devices and components. Full article

Heusler compounds and alloys represent a rapidly expanding family of materials that exhibit novel properties of significant interest for advanced technological applications. Electronic band structure calculations play a pivotal role in advancing research in this area. In an earlier study, we explored the properties of a new class of Heusler compounds based on Li, referred to as “$p^0$-d semi-Heusler Compounds”. In this study, we take the research a step further by focusing on “$d^0$-d semi-Heusler Compounds”, with the chemical formula KZ(Ga, Ge, As, or Se), where Z represents a transition metal. Our investigation centers on the structural, electronic, and magnetic properties of these compounds, particularly in relation to the three possible $C{1}_{\mathrm{b}}$ structures. Most of these compounds are found to be magnetic and, notably, several among them exhibit half-metallicity making them appealing for applications in spintronics. Our findings provide a foundation for future experimental research on these materials. Full article

The possibility of directly growing carbon nanofibers (CNFs) and carbon nanotubes (CNTs) on half-Heusler alloys by Chemical Vapour Deposition (CVD) is investigated for the first time, without using additional catalysts, since the half-Heusler alloys per se may function as catalytic substrates, according to the findings of the current study. As a carbon source, acetylene is used in the temperature range of 700–750 °C. The n-type half-Heusler compound ${\left({\mathrm{Z}\mathrm{r}}_{0.4}{\mathrm{T}\mathrm{i}}_{0.6}\right)}_{0.33}{\mathrm{N}\mathrm{i}}_{0.33}{\left({\mathrm{S}\mathrm{n}}_{0.98}{\mathrm{S}\mathrm{b}}_{0.02}\right)}_{0.33}$ is utilized as the catalytic substrate. At first, a computational model is developed for the CVD reactor, aiming to optimize the experimental process design and setup. The experimental process conditions are simulated to investigate the reactive species concentrations within the reactor chamber and the activation of certain reactions. SEM analysis confirms the growth of CNFs with diameters ranging from 450 nm to 1 μm. Raman spectroscopy implies that the formed carbon structures resemble CNFs rather than CNTs, and that amorphous carbon also co-exists in the deposited samples. From the characterization results, it may be concluded that a short reaction time and a low acetylene flow rate lead to the formation of a uniform CNF coating on the surface of half-Heusler alloys. The purpose of depositing carbon nanostructures onto half-Heusler alloys is to improve the current transfer, generated from these thermoelectric compounds, by forming a conductive coating on their surface. Full article

A support vector regression model for predictions of the thermoelectric power factor of half-Heusler phases was implemented based on elemental features of ions. The training subset was composed of 53 hH phases with 18 valence electrons. The target values were calculated within the density functional theory and Boltzmann equation. The best predictors out of over 2000 combinations regarded for the p-type power factor at room temperature are: electronegativity, the first ionization energy, and the valence electron count of constituent ions. The final results of support vector regression for 70 hH phases are compared with data available in the literature, revealing good ability to determine favorable thermoelectric materials, i.e., VRhGe, TaRhGe, VRuSb, NbRuAs, NbRuBi, LuNiAs, LuNiBi, TaFeBi, YNiAs, YNiBi, TaRuSb and NbFeSb. The results and discussion presented in this work should encourage further fusion of ab initio investigations and machine learning support, in which the elemental features of ions may be a sufficient input for reasonable predictions of intermetallics with promising thermoelectric performance. Full article

In the wide group of thermoelectric compounds, the half-Heusler ZrNiSn alloy is one of the most promising materials thanks to its thermal stability and narrow band gap, which open it to the possibility of mid-temperature applications. A large variety of defects and doping can be introduced in the ZrNiSn crystalline structure, thus allowing researchers to tune the electronic band structure and enhance the thermoelectric performance. Within this picture, theoretical studies of the electronic properties of perfect and defective ZrNiSn structures can help with the comprehension of the relation between the topology of defects and the thermoelectric features. In this work, a half-Heusler ZrNiSn alloy is studied using different defective models by means of an accurate Density Functional Theory supercell approach. In particular, we decided to model the most common defects related to Ni, which are certainly present in the experimental samples, i.e., interstitial and antisite Ni and a substitutional defect consisting of the replacement of Sn with Sb atoms using concentrations of 3% and 6%. First of all, a comprehensive characterization of the one-electron properties is performed in order to gain deeper insight into the relationship between structural, topological and electronic properties. Then, the effects of the modeled defects on the band structure are analyzed, with particular attention paid to the region between the valence and the conduction bands, where the defective models introduce in-gap states with respect to the perfect ZrNiSn crystal. Finally, the electronic transport properties of perfect and defective structures are computed using semi-classical approximation in the framework of the Boltzmann transport theory as implemented in the Crystal code. The dependence obtained of the Seebeck coefficient and the power factor on the temperature and the carrier concentration shows reasonable agreement with respect to the experimental counterpart, allowing possible rationalization of the effect of the modeled defects on the thermoelectric performance of the synthesized samples. As a general conclusion, defect-free ZrNiSn crystal appears to be the best candidate for thermoelectric applications when compared to interstitial and antisite Ni defective models, and substitutional defects of Sn with Sb atoms (using concentrations of 3% and 6%) do not appreciably improve electronic transport properties. Full article

The structural, dynamical, electrical, magnetic, and thermoelectric properties of CoMRhSi (M = Cr, Mn) quaternary Heusler alloys (QHAs) were investigated using density functional theory (DFT). The Y-type-II crystal structure was found to be the most stable configuration for these QHAs. Both CoCrRhSi and CoMnRhSi alloys possess a half-metallic behavior with a 100% spin-polarization as the majority spin channel is metallic. On the other hand, the minority spin channel is semiconducting with narrow indirect band gaps of 0.54 eV and 0.57 eV, respectively, along the $\mathsf{\Gamma }-X$ high symmetry line. In addition, both CoCrRhSi and CoMnRhSi alloys possess a ferromagnetic structure with total magnetic moments of 4 μ_B, and 5 μ_B, respectively, which are prominent for spintronics applications. The thermoelectric properties of the subject QHAs were calculated by using Boltzmann transport theory within the constant relaxation time approximation. The lattice thermal conductivities were also evaluated by Slack’s equation. The predicted values of the figure-of-merit (ZT) for CoCrRhSi and CoMnRhSi were found to be 0.84 and 2.04 at 800 K, respectively, making them ideal candidates for thermoelectric applications. Full article

Machine learning models (Support Vector Regression) were applied for predictions of several targets for 18-electron half-Heusler phases: a lattice parameter, a bulk modulus, a band gap, and a lattice thermal conductivity. The training subset, which consisted of 47 stable phases, was studied with the use of Density Functional Theory calculations with two Exchange-Correlation Functionals employed (GGA, MBJGGA). The predictors for machine learning models were defined among the basic properties of the elements. The most optimal combinations of predictors for each target were proposed and discussed. Root Mean Squared Errors obtained for the best combinations of predictors for the particular targets are as follows: 0.1 Å (lattice parameters), 11–12 GPa (bulk modulus), 0.22 eV (band gaps, GGA and MBJGGA), and 9–9.5 W/mK (lattice thermal conductivity). The final results of the predictions for a large set of 74 semiconducting half-Heusler compounds were disclosed and compared to the available literature and experimental data. The findings presented in this work encourage further studies with the use of combined machine learning and ab initio calculations. Full article

As a result of the high-throughput ab initiocalculations, the set of 34 stable and novel half-Heusler phases was revealed. The electronic structure and the elastic, transport, and thermoelectric properties of these systems were carefully investigated, providing some promising candidates for thermoelectric materials. The complementary nature of the research is enhanced by the deformation potential theory applied for the relaxation time of carriers (for power factor, PF) and the Slack formula for the lattice thermal conductivity (for figure of merit, ZT). Moreover, two exchange-correlation parametrizations were used (GGA and MBJGGA), and a complete investigation was provided for both p- and n-type carriers. The distribution of the maximum PF and ZT for optimal doping at 300 K in all systems was disclosed. Some chemical trends in electronic and transport properties were discussed. The results suggest TaFeAs, TaFeSb, VFeAs, and TiRuAs as potentially valuable thermoelectric materials. TaFeAs revealed the highest values of both PF and ZT at 300 K (PF${}_p$ = 1.67 mW/K${}^2$m, ZT${}_p$ = 0.024, PF${}_n$ = 2.01 mW/K${}^2$m, and ZT${}_p$ = 0.025). The findings presented in this work encourage further studies on the novel phases, TaFeAs in particular. Full article

Pseudo-ternary half-Heusler thermoelectric materials, which are formed by filling the B sites of traditional ternary half-Heusler thermoelectric materials of ABX with equal atomic proportions of various elements, have attracted more and more attention due to their lower intrinsic lattice thermal conductivity. High-purity and relatively dense Ti_1−xNb_x(FeCoNi)Sb (x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1) alloys were prepared via microwave synthesis combined with rapid hot-pressing sintering, and their thermoelectric properties are investigated in this work. The Seebeck coefficient was markedly increased via Nb substitution at Ti sites, which resulted in the optimized power factor of 1.45 μWcm⁻¹K⁻² for n-type Ti_0.93Nb_0.07(FeCoNi)Sb at 750 K. In addition, the lattice thermal conductivity was largely decreased due to the increase in phonon scattering caused by point defects, mass fluctuation and strain fluctuation introduced by Nb-doping. At 750 K, the lattice thermal conductivity of Ti_0.97Nb_0.03(FeCoNi)Sb is 2.37 Wm⁻¹K⁻¹, which is 55% and 23% lower than that of TiCoSb and Ti(FeCoNi)Sb, respectively. Compared with TiCoSb, the ZT of the Ti_1−xNb_x(FeCoNi)Sb samples were significantly increased. The average ZT values of the Nb-doped pseudo-ternary half-Heusler samples were dozens of times that of the TiCoSb prepared using the same process. Full article

Half-Heusler alloys are among the most promising thermoelectric materials. In the present review, thermoelectric properties (at 300 K and 800 K) of more than 1100 compositions from more than 220 publications between 1998 and 2023 were collected and evaluated. The dependence of the peak figure of merit, ZT_max, of p- and n-type half-Heusler alloys on the publishing year and the peak temperature is displayed in several figures. Furthermore, plots of ZT vs. the electrical resistivity, the Seebeck coefficient and the thermal conductivity at 300 K and 800 K are shown and discussed. Especially thermal conductivity vs. power factor leads to a good overview of ZT. For both p- and n-type individually separated into systems, ZTs and peak ZTs in dependence on the composition are displayed and discussed. This overview can help to find the ideal half-Heusler alloy for practical use. Full article

The density functional theory was used to explore the structural, electronic, dynamical, and thermoelectric properties of a VIrSi half-Heulser (HH) alloy. The minimum lattice constant of 5.69 $(\AA )$ was obtained for VIrSi alloy. The band structure and the projected density of states for this HH alloy were calculated, and the gap between the valence and conduction bands was noted to be 0.2 eV. In addition, the quasi-harmonic approximation was used to predict the dynamical stability of the VIrSi HH alloy. At 300 K, the Seebeck coefficient of 370 and −270 $\mathsf{\mu }$V.K${}^{-1}$, respectively, was achieved for the p and n-type doping. From the power factor result, the highest peak of 18 × 10${}^{11}$ W/cm.K${}^2$ is obtained in the n-type doping. The Figure of Merit (ZT) result revealed that VIrSi alloy possesses a high ZT at room temperature, which would make VIrSi alloy applicable for thermoelectric performance. Full article

RNiSb intermetallics are composed of R-rare earth, T-transition metals, and X-p elements. This family of compounds demonstrates many outstanding properties and phenomena perspectives in functional applications. The intermetallic compounds are crystalized in the cubic half-Heusler structure (space group F$\overline{4}$3 m). Similar binary RSb compounds with the same crystal structure are topological semimetals with unusual Dirac-cone-like states observed in ARPES studies. In this work, the band structure and magnetic properties of ErSb and ErNiSb compounds are investigated in the framework of the DFT+U method comprising the density functional theory and correction for strong electron correlations in Er 4f shell. The calculated magnetic properties of both alloys obtained, to be solely caused by the magnetic moments of the Er ions, provide good agreement with the experimental data. ErSb has the band structure of a topological semimetal. A narrow energy gap was found in the band structure of ErNiSb, i.e., this alloy is an indirect gap semiconductor. The energy gap in ErNiSb was calculated to be 0.25 eV due to the minority spin projection. The band structure exhibits the presence of occupied bands, which can form a hole pocket near Γ in the L-Γ-X and K-Γ directions. In the band structure of ErSb, one can find the hole pockets near the same k-point along L-Γ-X, K-Γ and an electron pocket along Γ-X-W. These bands form topological features in ErSb, in particular, and cause a semimetallic state. Full article