Search Results (27)

The in situ combination of plasma-enhanced chemical vapor deposition (PECVD) and vacuum evaporation in the same vacuum chamber allowed us to integrate germanium nanocrystals (Ge NCs) into hydrogenated amorphous silicon carbide (a-SiC:H) thin films deposited from monomethyl silane diluted with hydrogen. Transmission electron microscopy (TEM) and energy-dispersive X-ray (EDX) spectroscopy were used for the microscopic characterization, while photothermal deflection spectroscopy (PDS) and near-infrared photoluminescence spectroscopy (NIR PL) were for optical characterization. The presence of Ge NCs embedded in the amorphous a-Si:C:H thin films was confirmed by TEM and EDX. The embedded Ge NCs increased optical absorption in the NIR spectral region. The quenching of a-SiC:H NIR PL due to the presence of Ge indicates that the diffusion length of free charge carriers in a-SiC:H is in the range of a few tens of nm, an order of magnitude less than in a-Si:H. The optical properties of a-SiC:H films were degraded after vacuum annealing at 550 °C. Full article

The development of skin-protective materials that prevent the adhesion of cnidarian nematocysts and enhance the mechanical strength of these materials is crucial for addressing the issue of jellyfish stings. This study aimed to construct superhydrophobic nanomaterials capable of creating a surface that inhibits nematocyst adhesion, therefore preventing jellyfish stings. We investigated wettability and nematocyst adhesion on four different surfaces: gelatin, polydimethylsiloxane (PDMS), dodecyl trichlorosilane (DTS)-modified SiO₂, and perfluorooctane triethoxysilane (PFOTS)-modified TiO₂. Our findings revealed that an increase in hydrophobicity significantly inhibited nematocyst adhesion. Furthermore, DTS-modified sprayed SiO₂ and PFOTS-modified sprated TiO₂ were further enhanced with low-surface-energy substances—cellulose nanofibers (CNF) and chitin nanocrystals (ChNCs)—to improve both hydrophobicity and mechanical strength. After incorporating CNF and ChNCs, the surface of s-TiO₂-ChNCs exhibited a contact angle of 153.49° even after undergoing abrasion and impact tests, and it maintained its hydrophobic properties with a contact angle of 115.21°. These results indicate that s-TiO₂-ChNCs can serve as an effective skin coating to resist tentacle friction. In conclusion, this study underscores the importance of utilizing hydrophobic skin materials to inhibit the adhesion of tentacle nematocysts, providing a novel perspective for protection against jellyfish stings. Full article

This work reports on the correlation between resistive switching (RS) with capacitance switching (CS) states observed in SiO₂/Si-nanocrystals (Si-NCs)/SiO₂ stack layers using a metal-insulating semiconductor (MIS)-like device. The formation of Si-NCs, which act as conductive nodes, of about 6.7 nm in size was confirmed using a transmission electron microscope. These devices exhibit bipolar RS properties with an intermediate resistive state (IRS), which is a self-compliance behavior related to the presence of the Si-NCs layer. The current value changes from 40 nA to 550 µA, indicating RS from a high resistance state (HRS) to a low resistance state (LRS) with the IRS at 100 µA. The accumulation (C_A) and inversion capacitance (C_I) also change when these RS events occur. The C_A switches from 2.52 nF to 3 nF with an intermediate CS of 2.7 nF for the HRS, LRS, and IRS, respectively. The C_I also switches from 0.23 nF to 0.6 nF for the HRS and LRS, respectively. These devices show an ON/OFF current ratio of 10⁴ with retention times of 10⁴ s. Furthermore, both C_A and C_I states remained stable for more than 10³ s. These findings highlight the potential of these devices for applications in information storage through memristor and memcapacitor technologies. Full article

We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO₃) deposited into SiO₂/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 10⁸ ions/cm²) followed by etching in HF solution. ZnSeO₃ nanocrystals were obtained via chemical deposition from the aqueous solution of ZnCl₂ and SeO₂ as Zn-, Se- and O-precursors. To estimate the thermal stability of the deposited precipitates, heat treatment was carried out at 800 and 1000 °C for 60 min in a vacuum environment. Scanning electron microscopy (SEM), X-ray diffractometry (XRD), photoluminescence (PL) spectroscopy, and electrical measurements were used for the characterization of ZnSeO₃/SiO_2nanoporous/Si nanocomposites. Thermal treatment of the synthesized nanocomposites resulted in structural transformations with the formation of ZnSe and ZnO phases while the content of the ZnSeO₃ phase decreased. For the as-deposited and annealed precipitates, an emission in the range of (400 to 600) nm was observed. PL spectra were approximated by four Gaussian curves with maxima at ~550 nm (2.2 eV), 488 nm (2.54 eV), ~440 nm (2.82 eV), and 410 nm (3.03 eV). Annealing resulted in a decrease in PL intensity that was possibly due to the weight loss of the deposited substance during high-temperature treatment. The redistribution of maxima intensities after annealing was also observed with an increase in blue and violet emissions. The origin of the observed PL is discussed. The I–V curve analysis revealed an electronic type of conductivity for the ZnSeO₃(NCs)/SiO_2nanoporous/Si structure. The values of the specific conductivity were calculated within the percolation model. The sample annealed at 800 °C showed the highest specific conductivity of 8.5 × 10⁻⁶ Ohm⁻¹·cm⁻¹. Full article

The early monitoring and inactivation of bacteria are of crucial importance in preventing the further spread of foodborne pathogens. Staphylococcus aureus (S. aureus), a prototypical foodborne pathogen, is widely present in the natural environment and has the capability to trigger a range of diseases at low concentrations. In this work, we designed Fe₃O₄@SiO₂-Au core–shell–satellite nanocomposites (NCs) modified with aptamer for efficient capture, high-sensitivity surface-enhanced Raman scattering (SERS) detection, and photothermal therapy (PTT) against S. aureus. Fe₃O₄@SiO₂-Au NCs with tunable Au nanocrystal nanogaps were prepared. By combining the finite-difference time-domain (FDTD) method and experimental results, we studied the electric field distribution of Fe₃O₄@SiO₂-Au under different Au nanogaps and ultimately obtained the optimal SERS substrate FSA-60. The modification of aptamer on the surfaces of FSA-60 could be used for the specific capture and selective detection of S. aureus, achieving a detection limit of as low as 50 cfu/mL. Furthermore, Apt-FSA-60 possessed excellent photothermal properties, demonstrating the strong photothermal killing ability against S. aureus. Therefore, Apt-FSA-60 is a promising high-sensitivity SERS substrate and efficient photothermal agent and is expected to be widely applied and promoted in future disease prevention and treatment. Full article

Molecular dynamics simulations were performed on CaO-MgO-Al₂O₃-SiO₂ (CMAS) diopside glass ceramics (GCs) to study the effect of nanocrystal on glass and the effect of chemical composition on mechanical properties. Under tensile loading, the GCs demonstrated that the strength lay between its glass and ceramic counterparts and maintained considerable ductility. Moreover, high Mg/Ca ion ratios are conductive to both the strength and ductility of GCs. In addition, Al ions should be avoided as far as possible since they would promote fracture. After analyzing the shear strain and displacement vector map for ion structures, we found that the presence of nanocrystal in glass changes the original deformation pattern and led to the deformation concentration surrounding the nanocrystal. A high Mg/Ca ion ratio would make the deformation more homogeneous, while a high Ca/Mg ion ratio would aggregate the deformation in the glass region near the nanocrystal. The existence of Al ions near the interface between glass and crystal would promote the formation of voids. Full article

In this work, the SET and RESET processes of bipolar resistive switching memories with silicon nanocrystals (Si-NCs) embedded in an oxide matrix is simulated by a stochastic model. This model is based on the estimation of two-dimensional oxygen vacancy configurations and their relationship with the resistive state. The simulation data are compared with the experimental current-voltage data of Si-NCs/Si${\mathrm{O}}_2$ multilayer-based memristor devices. Devices with 1 and 3 Si-NCs/Si${\mathrm{O}}_2$ bilayers were analyzed. The Si-NCs are assumed as agglomerates of fixed oxygen vacancies, which promote the formation of conductive filaments (CFs) through the multilayer according to the simulations. In fact, an intermediate resistive state was observed in the forming process (experimental and simulated) of the 3-BL device, which is explained by the preferential generation of oxygen vacancies in the sites that form the complete CFs, through Si-NCs. Full article

All-inorganic perovskite nanocrystals (NCs) have attractive potential for applications in display and lighting fields due to their special optoelectronic properties. However, they still suffer from poor water and thermal stability. In this work, green CsPbBr₃-alginic acid (CsPbBr₃-AA) perovskite composites were synthesized by an in situ hot-injection process which showed a high photoluminescence quantum yield (PLQY) of 86.43% and improved moisture and thermal stability. Finally, white light-emitting diodes (WLEDs) were fabricated by combining the green CsPbBr₃-AA perovskite composites with red K₂SiF₆:Mn⁴⁺ phosphors and blue InGaN LED chips. The WLEDs show a relatively high luminous efficacy of 36.4 lm/W and a wide color gamut (124% of the National Television System Committee). These results indicate that the green CsPbBr₃-AA perovskite composites have great potential applications in backlight displays. Full article

Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO₂) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO₂ (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved. Full article

In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.24 nm embedded in a SiO₂/Si-NCs/SiO₂ multilayer structure acts as an RS layer. These devices exhibit bipolar RS with an intermediate resistance step during SET and RESET processes, which is believed to lie in the Si-NCs layer acting as charge-trapping nodes. The endurance studies of about 70 DC cycles indicate an ON/OFF ratio of ~10⁶ and a retention time larger than 10⁴ s. Long-term potentiation (LTP, −2 V) and long-term depression (LTD, +4 V) are obtained by applying consecutive identical pulse voltages of 150 ms duration. The current value gradually increases/decreases (LTP/LTD) as the pulse number increases. Three consecutive identical pulses of −2 V/150 ms (LTP) separated by 5 and 15 min show that the last current value obtained at the end of each pulse train is kept, confirming an analog RS behavior. These characteristics provide a possible way to mimic biological synapse functions for applications in neuromorphic computing in Si-NCs-based CMOS structures. Full article

We propose here a novel green synthesis route of core-shell magnetic nanomaterials based on the polyol method, which uses bio-based substances (BBS) derived from biowaste, as stabilizer and directing agent. First, we studied the effect of BBS concentration on the size, morphology, and composition of magnetic iron oxides nanoparticles obtained in the presence of BBS via the polyol synthesis method (MBBS). Then, as a proof of concept, we further coated MBBS with mesoporous silica (MBBS@mSiO₂) or titanium dioxide (MBBS@TiO₂) to obtain magnetic nanostructured core-shell materials. All the materials were deeply characterized with diverse physicochemical techniques. Results showed that both the size of the nanocrystals and their aggregation strongly depend on the BBS concentration used in the synthesis: the higher the concentration of BBS, the smaller the sizes of the iron oxide nanoparticles. On the other hand, the as-prepared magnetic core-shell nanomaterials were applied with good performance in different systems. In particular, MBBS@SiO₂ showed to be an excellent nanocarrier of ibuprofen and successful adsorbent of methylene blue (MB) from aqueous solution. MBBS@TiO₂ was capable of degrading MB with the same efficiency of pristine TiO₂. These excellent results encourage the use of bio-based substances in different types of synthesis methods since they could reduce the fabrication costs and the environmental impact. Full article

The present contribution aims to enhance solar cells’ performance via the development of advanced luminescent down-shifting based on encapsulated nanostructured perovskite materials. Here, thin films of inorganic lead halide (CsPbBr₃) perovskite nanocrystal luminophores were synthetized, by hot-injection, deposited on glass substrates by spin-coating, and encapsulated with parylene type C, via chemical vapor deposition, to protect and stabilize the films. The optical properties of these thin films were characterized by absorption, emission and 2D contour spectra, their structure by X-ray diffraction and X-ray photoelectron spectroscopy, and the morphology by Scanning Transmission Electron microscopy. I–V curve and spectral response nanocrystalline silicon photovoltaic (nc-Si:H PV) cells were studied in the absence and presence of the perovskite and parylene luminescent down-shifting layers. The incorporation of the CsPbBr₃ nanocrystals and their encapsulation with the parylene type C polymeric coating led to an increase in the current generated and the spectral response of the PV cells in the regime of the nanocrystals’ fluorescence emission. A 3.1% increase in the short circuit current density and a 5.6% increase in the power conversion efficiency were observed. Full article

In this work, we show a correlation between the composition and the microstructural and optical properties of bright and uniform luminescent porous silicon (PSi) films. PSi films were synthesized by electrochemical etching using nitric acid in an electrolyte solution. PSi samples synthesized with nitric acid emit stronger (up to six-fold greater) photoluminescence (PL) as compared to those obtained without it. The PL peak is shifted from 630 to 570 nm by changing the concentration ratio of the HF:HNO₃:(EtOH-H₂O) electrolyte solution, but also shifts with the excitation energy, indicating quantum confinement effects in the silicon nanocrystals (Si-NCs). X-ray photoelectron spectroscopy analysis shows a uniform silicon content in the PSi samples that emit the strongest PL. High-resolution transmission electron microscopy reveals that the Si-NCs in these PSi samples are about ~2.9 ± 0.76 nm in size and are embedded in a dense and stoichiometric SiO₂ matrix, as indicated by the Fourier transform infrared analysis. On the other hand, the PSi films that show PL of low intensity present an abrupt change in the silicon content depth and the formation of non-bridging oxygen hole center defects. Full article

In this study, we prepare Erbium compound nanocrystals and Si nanocrystal (Si NC) co-embedded silica film by the sol-gel method. Dual phases of Si and Er chloride silicate (ECS) nanocrystals were coprecipitated within amorphous silica. Effective sensitized emission of Er chloride silicate nanocrystals was realized via interparticle energy transfer between silicon nanocrystal and Er chloride silicate nanocrystals. The influence of density and the distribution of sensitizers and Er compounds on interparticle energy transfer efficiency was discussed. The interparticle energy transfer between the semiconductor and erbium compound nanocrystals offers some important insights into the realization of efficient light emission for silicon-based integrated photonics. Full article

Group IV nanocrystals (NCs), in particular from the Si–Ge system, are of high interest for Si photonics applications. Ge-rich SiGe NCs embedded in nanocrystallized HfO₂ were obtained by magnetron sputtering deposition followed by rapid thermal annealing at 600 °C for nanostructuring. The complex characterization of morphology and crystalline structure by X-ray diffraction, μ-Raman spectroscopy, and cross-section transmission electron microscopy evidenced the formation of Ge-rich SiGe NCs (3–7 nm diameter) in a matrix of nanocrystallized HfO₂. For avoiding the fast diffusion of Ge, the layer containing SiGe NCs was cladded by very thin top and bottom pure HfO₂ layers. Nanocrystallized HfO₂ with tetragonal/orthorhombic structure was revealed beside the monoclinic phase in both buffer HfO₂ and SiGe NCs–HfO₂ layers. In the top part, the film is mainly crystallized in the monoclinic phase. High efficiency of the photocurrent was obtained in a broad spectral range of curves of 600–2000 nm at low temperatures. The high-quality SiGe NC/HfO₂ matrix interface together with the strain induced in SiGe NCs by nanocrystallization of both HfO₂ matrix and SiGe nanoparticles explain the unexpectedly extended photoelectric sensitivity in short-wave infrared up to about 2000 nm that is more than the sensitivity limit for Ge, in spite of the increase of bandgap by well-known quantum confinement effect in SiGe NCs. Full article