Search Results (65)

The growing demand for wideband electronically scanned arrays (ESAs) in next-generation radar, satellite, and 5G/6G systems has renewed interest in true time delay units (TDUs) to overcome the limitations of phase-based beamforming. In parallel, recent advances in the commercial availability and reliability of packaged RF MEMS switches have enabled practical hardware implementations once considered infeasible. This paper presents the design, fabrication, and experimental validation of a broadband, 4-bit switched-line TDU using only off-the-shelf components and standard PCB processes. The unit operates from 0.4 to 6 GHz, with a total delay range of 0–413 ps, achieving an average insertion loss of 1.5 dB and delay error below 18.4 ps, resulting in a figure of merit (FOM) of 152.8 ps/dB. Measured results are reported alongside a refined switch/termination model that aligns simulations with measurements. This is among the first reported demonstrations of a complete RF MEMS-based TDU implemented entirely with commercially available components in a standard PCB-integrated implementation. These results demonstrate a practical pathway toward scalable MEMS-based TDUs for deployment in advanced beamforming systems. Full article

This paper provides a comprehensive review of recent advancements in radio-frequency (RF) multifunctional components with integrated filtering characteristics, including tunable filtering attenuators, filtering power dividers, filtering couplers, and filtering Butler matrices, all of which play critical roles in wireless communication systems. With the increasing demand for miniaturization, integration, and low-loss performance in RF front-ends, multifunctional components with filtering characteristics have become essential. This review first introduces tunable attenuators and filtering attenuators based on various technologies such as PIN diodes, graphene-based structures, and RF-MEMS switches, and also analyzes their advantages, limitations, and performance. Then, we discuss filtering power dividers developed from Wilkinson structures, three-line coupled structures, resonator-based coupling matrix methods, and SSPP-waveguide hybrids. Furthermore, filtering couplers and filtering Butler matrices are reviewed, highlighting their capability to simultaneously achieve amplitude and phase control, making them suitable for multi-beam antenna feeding networks. Finally, a brief conclusion is summarized. Future research directions, such as hybrid technologies, novel materials, broadband and multi-band designs, and antenna-matrix co-design, are suggested to further enhance the performance and practicality of multifunctional RF components for next-generation wireless communication systems. Full article

As a core functional device in microwave systems, attenuators play a crucial role in key aspects such as signal power regulation, amplitude attenuation, and impedance matching. Addressing the pressing technical issues currently exposed by attenuators in practical applications, such as excessive insertion loss, low attenuation accuracy, large physical dimensions, and insufficient process reliability, this paper proposes a design scheme for an RF three-bit reconfigurable stepped attenuator based on radio frequency micro-electromechanical systems (RF MEMS) switches. The attenuator employs planar integration of the T-type attenuation network, Coplanar Waveguide (CPW), Y-shaped power divider, and RF MEMS switches. While ensuring rational power distribution and stable attenuation performance over the full bandwidth, it reduces the number of switches to suppress parasitic parameters, thereby enhancing process feasibility. Test results confirm that this device demonstrates significant advancements in attenuation accuracy, achieving a precision of 1.18 dB across the 0–25 dB operational range from DC to 20 GHz, with insertion loss kept below 1.65 dB and return loss exceeding 12.15 dB. Additionally, the device boasts a compact size of merely 0.66 mm × 1.38 mm × 0.32 mm, significantly smaller than analogous products documented in existing literature. Meanwhile, its service life approaches 5 × 10⁷ cycles. Together, these two attributes validate the device’s performance reliability and miniaturization advantages. Full article

In the rapidly advancing digital era, the demand for miniaturized and high-performance electronic devices is increasing, particularly in applications such as wireless communication, unmanned aerial vehicles, and healthcare devices. Radio-frequency microelectromechanical systems (RF MEMS), particularly RF MEMS switches, play a crucial role in enhancing RF performance by providing low-loss, high-isolation switching and precise signal path control in reconfigurable RF front-end systems. Among different configurations, electrothermally actuated bistable lateral RF MEMS switches are preferred for their energy efficiency, requiring power only during transitions. This paper presents a novel approach to improve the RF performance of such a switch through structural modifications and machine learning (ML)-driven optimization. To enable efficient high-frequency operation, the H-clamp structure was re-engineered into various lateral configurations, among which the I-clamp exhibited superior RF characteristics. The proposed I-clamp switch was optimized using an eXtreme Gradient Boost (XGBoost) ML model to predict optimal design parameters while significantly reducing the computational overhead of conventional EM simulations. Activation functions were employed within the ML model to improve the accuracy of predicting optimal design parameters by capturing complex nonlinear relationships. The proposed methodology reduced design time by 87.7%, with the optimized I-clamp switch achieving −0.8 dB insertion loss and −70 dB isolation at 10 GHz. Full article

This paper proposes a detailed design study of resonating high-frequency notch filters driven by RF MEMS switches and their optimization for dual-band operation in the X-Band. Microstrip configurations will be considered for single and dual-band applications. An SPDT (single-pole-double-thru) switch composed of double-clamped ohmic microswitches has been introduced to connect triangular resonators with Sierpinski geometry, symmetrically placed with respect to a microstrip line to obtain a dual notch response. Close frequencies or spans as wide as 2 GHz can be obtained depending on the internal complexity and the edge side. The internal complexity has been modified to introduce the possibility of using the same edge size for the frequency tuning of an elementary cell, maintaining a fixed footprint, and allowing coupled structures to implement high-frequency filters of the same size and variable operational frequencies. Preliminary experimental results have been obtained as a confirmation of the predicted device functionality. Full article

Radio Frequency Micro Electro Mechanical Systems (RF MEMS) are devices showing exceptional potential to satisfy the demands of emerging RF electronic technologies, including those considered for high-power applications, such as for long distance communication systems. Operation in this regime requires an alternative way of thinking for these devices and, for example, a more accurate control of the pull-in voltage is of major importance due to the self-actuation effect. Therefore, the studies focusing on the features of the moving bridges are of great importance. This work presents the fabrication of a full family of RF MEMS switches suitable for high-power implementations having bridges deposited by Au electroplating and released using purely standard wet processes, as well as a carefully designed experimental study of their pull-in voltage. Depositing the bridge of the high-power RF MEMS by using only a single electroplating step makes the device fabrication easier, whilst the utilization of a purely wet release process is an asset. This method relies on low temperature processes, applicable simultaneously in bridges with various geometrical and perforation details without the need of any specialised infrastructure. The experimentally obtained results suggest that for this technology the bridge thickness is a critical factor for controlling the pull-in characteristics between devices fabricated in the same run. Moreover, it is revealed that for thicker bridges, geometry and hole perforation effects are more pronounced. This technology is therefore suitable for developing RF MEMS where the bridge thickness could be potentially utilized for enabling optimization engineering between devices that should be fabricated in the same run but need to satisfy diverse specifications during their operation. Full article

A geometrical reconfigurable structure based on RF Micro-electro-mechanical switches (RF-MEMS) is proposed in this work. The structure is composed of an array of gold metallic patches interconnected together utilizing RF-MEMS switches in order to change its geometry and, consequently, the scattering parameters. In particular, the reconfigurability is achieved by activating multiple RF-MEMS switches, which enables the change in electrical length and, consequently, the resonance frequency of the structure. As a proof of concept, an experimental antenna prototype composed of an array of $7\times 7$ elements interconnected by a set of RF-MEMS switches has been designed, fabricated numerically, and experimentally assessed. The structure can be set as an antenna or as other basic radio frequency components. The obtained experimental results are in good agreement with the simulations, with an error of less than $5\%$ for the considered radiating structures. The quite promising results demonstrate the potential and flexibility of the proposed structure. Full article

This paper presents a three-channel reconfigurable step attenuator based on radio frequency (RF) microelectromechanical system (MEMS) switches, in response to the current issues of high insertion loss and low attenuation accuracy of attenuators. The coplanar waveguide (CPW), cross-shaped power dividers, RF MEMS switches, and π-type attenuation resistor networks are designed as a basic unit of the attenuator. The attenuator implemented attenuation of 0~30 dB at 5 dB intervals in the frequency range of 1~25 GHz through two basic units. The results show that the insertion loss is less than 1.41 dB, the attenuation accuracy is better than 2.48 dB, and the geometric size is 2.4 mm × 4.0 mm × 0.7 mm. The attenuator can be applied to numerous fields such as radar, satellites, aerospace, electronic communication, and so on. Full article

Due to its excellent electrical performance, mechanical reliability, and thermal stability, electroplated gold is still the most commonly used material for movable beams in RF MEMS switches. This paper investigates the influence of process conditions on the quality and growth rate of gold electroplating, and the optimized process parameters for the gold electroplating process are obtained. The characterization of the optimized electroplated gold layer shows that it has small surface roughness and excellent thermal stability. With this optimized gold electroplating process, the RF MEMS switches are fabricated and hermetic packaged. In order to obtain the temperature environment adaptability of the packaged switch, the influence of working temperature is studied. The temperature effects on mechanical performance (includes pull-in voltage and lifetime) and RF performance (includes insertion loss and isolation) are revealed. Full article

A novel stress suppression design for flexible RF MEMS switches has been presented and demonstrated through theoretical and experimental research to isolate the stress caused by substrate bending. An RF MEMS switch with an S-shaped microspring structure was fabricated by the two-step etching process as a developmental step toward miniaturization and high reliability. The RF MEMS switches with an S-shaped microspring exhibited superior microwave performance and stable driving voltage under different substrate curvatures compared to the conventional non-microspring switches, demonstrating that the bending stress is successfully suppressed by the S-shaped microspring and the island structure. Furthermore, this innovative design could be easily extended to other flexible devices. Full article

In this paper, different concepts of reconfigurable RF-MEMS attenuators for beamforming applications are proposed and critically assessed. Capitalizing on the previous part of this work, the 1-bit attenuation modules featuring series and shunt resistors and low-voltage membranes (7–9 V) are employed to develop a 3-bit attenuator for fine-tuning attenuations (<−10 dB) in the 24.25–27.5 GHz range. More substantial attenuation levels are investigated using fabricated samples of coplanar waveguide (CPW) sections equipped with Pi-shaped resistors aiming at attenuations of −15, −30, and −45 dB. The remarkable electrical features of such configurations, showing flat attenuation curves and limited return losses, and the investigation of a switched-line attenuator design based on them led to the final proposed concept of a low-voltage 24-state attenuator. Such a simulated device combines the Pi-shaped resistors for substantial attenuations with the 3-bit design for fine-tuning operations, showing a maximum attenuation level of nearly −50 dB while maintaining steadily flat attenuation levels and limited return losses (<−11 dB) along the frequency band of interest. Full article

This paper introduces a broadband triple-pole triple-throw (3P3T) RF MEMS switch with a frequency range from DC to 380 GHz. The switch achieves precise signal control and efficient modulation through its six-port design. It achieves an insertion loss of −0.66 dB across its frequency range, with isolation and return loss metrics of −32 dB and −15 dB, respectively. With its low actuation voltage of 6.8 V and rapid response time of 2.28 μs, the switch exemplifies power-efficient and prompt switching performance. The compact design is ideal for integration into space-conscious systems. This switch is pivotal for 6G research and has potential applications in satellite communications, military radar systems, and next-generation radio applications that require multi-antenna access. Full article

The miniaturization and low power consumption characteristics of RF MEMS (Radio Frequency Microelectromechanical System) switches provide new possibilities for the development of microsatellites and nanosatellites, which will play an increasingly important role in future space missions. This paper provides a comprehensive review of RF MEMS switches in satellite communication, detailing their working mechanisms, performance optimization strategies, and applications in reconfigurable antennas. It explores various driving mechanisms (electrostatic, piezoelectric, electromagnetic, thermoelectric) and contact mechanisms (capacitive, ohmic), highlighting their advantages, challenges, and advancements. The paper emphasizes strategies to enhance switch reliability and RF performance, including minimizing the impact of shocks, reducing driving voltage, improving contacts, and appropriate packaging. Finally, it discusses the enormous potential of RF MEMS switches in future satellite communications, addressing their technical advantages, challenges, and the necessity for further research to optimize design and manufacturing for broader applications and increased efficiency in space missions. The research findings of this review can serve as a reference for further design and improvement of RF MEMS switches, which are expected to play a more important role in future aerospace communication systems. Full article

The performance consistency of an RF MEMS switch matrix is a crucial metric that directly impacts its operational lifespan. An improved crossbar-based RF MEMS switch matrix topology, SR-Crossbar, was investigated in this article. An optimized port configuration scheme was proposed for the RF MEMS switch matrix. Both the utilization probability of individual switch nodes and the path lengths in the switch matrix achieve their best consistency simultaneously under the proposed port configuration scheme. One significant advantage of this scheme lies in that it only adjusts the positions of the input and output ports, with the topology and individual switch nodes kept unchanged. This grants it a high level of generality and feasibility and also introduces an additional degree of freedom for optimizations. In this article, a universal utilization probability function of single nodes was constructed and an optimization objective function for the SR-Crossbar RF MEMS switch matrix was formulated, which provide a convenient approach to directly solving the optimized port configuration scheme for practical applications. Simulations to demonstrate the optimized dynamic and static consistencies were conducted. For an 8 × 8 SR-Crossbar switch matrix, the standard deviations of contact resistances of 128 units and losses of all 64 paths decreased from 1.00 and 0.42 to 0.51 and 0.23, respectively. These results aligned closely with theoretical calculations derived from the proposed model. Full article