Search Results (132)

Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal–organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices. Full article

Mesoporous silicon dioxide films have been shown to be well suited as adhesion-promoting interlayers for generating high-strength polymer–metal interfaces. These films can be fabricated via microwave plasma-enhanced chemical vapor deposition using the precursor hexamethyldisiloxane and oxygen as working gas. The resulting mesoporous structures enable polymer infiltration during overmolding, which leads to a nanoscale form-locking mechanism after solidification. This mechanism allows for efficient stress transfer across the interface and makes the resulting adhesion highly dependent on the morphology of the deposited film. To gain a deeper understanding of the underlying deposition mechanisms and improve process stability, this work investigates the growth behavior of mesoporous silica films using a multiple regression analysis approach. The seven process parameters coating time, distance, chamber pressure, substrate temperature, flow rate, plasma pulse duration, and pause-to-pulse ratio were systematically varied within a Design of Experiments framework. The resulting films were characterized by their free surface area, mean agglomerate diameter, and film thickness using digital image analysis, white light interferometry, and atomic force microscopy. The deposited films exhibit a wide range of morphological appearances, ranging from quasi-dense to dust-like structures. As part of this research, the free surface area varied from 15 to 55 percent, the mean agglomerate diameter from 17 to 126 nm, and the film thickness from 35 to 1600 nm. The derived growth model describes the deposition process with high statistical accuracy. Furthermore, all coatings were overmolded via injection molding and subjected to mechanical testing, allowing a direct correlation between film morphology and their performance as adhesion-promoting interlayers. Full article

Silicon oxynitride (SiO_xN_y, hereafter denoted as SiON) thin films represent an intermediate phase between silicon dioxide (SiO₂) and silicon nitride (Si₃N₄). Through systematic compositional ratio adjustments, the refractive index can be precisely tuned across a wide range from 1.45 to 2.3. However, the underlying mechanism governing the influence of elemental composition on film structural quality remains insufficiently understood. To address this knowledge gap, we systematically investigate the effects of key industrial plasma-enhanced chemical vapor deposition (PECVD) parameters—including precursor gas selection and flow rate ratios—on SiON film properties. Our experimental measurements reveal that stoichiometric SiO_xN_y (x = y) achieves a minimum surface roughness of 0.18 nm. As oxygen content decreases and nitrogen content increases, progressive replacement of Si-O bonds by Si-N bonds correlates with increased structural defect density within the film matrix. Capacitance–voltage (C-V) characterization demonstrates a corresponding enhancement in device capacitance following these compositional modifications. Recent studies confirm that controlled modulation of film stoichiometry enables precise tailoring of dielectric properties and capacitive behavior, as demonstrated in SiON-based power electronics, thereby advancing applications in related fields. Full article

Silicon nitride (SiN) films deposited via plasma-enhanced chemical vapor deposition (PECVD) exhibit tunable tensile stress, which is critical for various microelectronic and optoelectronic applications. In this paper, the effects of silane (SiH₄) flow rate during PECVD deposition, ultraviolet (UV) curing, and layered deposition on the tensile stress of SiN films are mainly investigated. The results reveal that increasing the SiH₄ concentration raises hydrogen incorporation, which modifies internal stress dynamics. UV curing significantly increases tensile stress by breaking N-H and Si-H bonds, facilitating hydrogen desorption, and promoting Si-N-Si crosslinking. The optimal UV curing duration stabilizes tensile stress at approximately 1570 MPa, while excessive UV power alters hydrogen content dynamics, reducing stress. Additionally, layered deposition further amplifies stress enhancement, with films subjected to multiple deposition cycles exhibiting increased densification and crosslinking. The combined optimization of PECVD deposition parameters, UV curing, and layered deposition provides a robust strategy for tailoring SiN film stress, offering a versatile approach to engineering mechanical properties for advanced applications. Full article

In this study, carbon nanosheets were deposited on the surface of graphite films for surface modification using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. The effects of catalyst addition and concentration, growth gas flow rate, and hydrogen plasma pretreatment on the size, morphology, and density of the deposited carbon nanosheets were investigated. These factors influence the deposition results by affecting the nucleation and growth processes of the carbon nanosheets, while the growth process affects their size. The surface morphology and distribution of the carbon nanosheets were characterized using scanning electron microscopy (SEM). Graphite film/aluminum composites were prepared using graphite films modified under different process conditions as reinforcements. The composite prepared with graphite films modified without catalysts showed significant improvement in thermal conductivity, achieving an xy-direction thermal conductivity of 705 W/(m·K) and a z-direction thermal conductivity of 14.8 W/(m·K), both of which are higher than those of unmodified graphite film/aluminum composites. X-ray diffraction (XRD) analysis was conducted to identify the phase composition of the resulting composites and confirm the structural integrity of the reinforcement after processing. Full article

In plasma-enhanced chemical vapor deposition (PECVD) processes, thin films can accumulate on the inner chamber walls, resulting in particle contamination and process drift. In this study, we investigate the physical and chemical properties of these wall-deposited films to understand their spatial variation and impact on chamber maintenance. A 6-inch capacitively coupled plasma (CCP)-type PECVD system was used to deposit SiO₂ films, whilst long silicon coupons were attached vertically to the chamber side walls to collect contamination samples. The collected contamination samples were comparatively analyzed in terms of their chemical properties and surface morphology. The results reveal significant differences in hydrogen content and Si–O bonding configurations compared to reference films deposited on wafers. The top chamber wall, located near the plasma region, exhibited higher hydrogen incorporation and larger Si–O–Si bonding angles, while the bottom wall exhibited rougher surfaces with larger particulate agglomerates. These variations were closely linked to differences in gas flow dynamics, precursor distribution, and the energy state of the plasma species at different chamber heights. The findings indicate that top-wall contaminants are more readily cleaned due to their high hydrogen content, while bottom-wall residues may be more persistent and pose higher risks for particle generation. This study provides insights into wall contamination behavior in PECVD systems and suggests strategies for spatially optimized chamber cleaning and conditioning in high-throughput semiconductor processes. Full article

An uncooled microbolometer is a thermal sensor consisting of a membrane suspended from the substrate to provide thermal insulation. Typically, the membrane is composed of a stack of three films integrated by a supporting film, an IR sensing film, and an IR absorbing film. However, the above increases the thickness of the device and affects its mechanical stability and thermal mass, thereby reducing its performance. One solution is to use a single film as a membrane with both IR sensing and IR absorbing properties. In this regard, this work presents the fabrication and evaluation of uncooled microbolometers using nitrogen-doped hydrogenated amorphous silicon-germanium (a-SiGe:H,N) as a single IR-absorber/IR sensing membrane. The films were deposited via low frequency Plasma Enhanced Chemical Vapor Deposition (PECVD) at 200 °C. Three microbolometer configurations were fabricated using a-SiGe:H,N films deposited from a SiH₄, GeH₄, N_2, and H₂ gas mixture with different SiH₄ and GeH₄ flow rates and, consequently, with different properties, such as temperature coefficient of resistance (TCR) and conductivity at room temperature. The microbolometer that exhibited the best performance achieved a voltage responsivity of 7.26 × 10⁵ V/W and a NETD of 22.35 mK at 140 Hz, which is comparable to state-of-the-art uncooled infrared (IR) sensors. These results confirm that the optimization of the deposition parameters of the a-SiGe:H,N films significantly affects the microbolometers final performance, enabling an optimal balance between thermal sensitivity (TCR) and conductivity. Full article

This study investigates the mechanical and optical characteristics of silicon nitride thin films deposited with PECVD at 80 °C for tunable silicon-rich SiN_x-SiO_y-based MEMS optical cavities. Varying the deposition parameters using SiH₄ and N₂ as precursor gases for silicon-rich SiN_x thin films allows us to tune the refractive index to a value as high as 2.40 ± 0.013 at an extinction coefficient of only 0.008, an extremely low surface roughness of only 0.26 nm, and a compressive stress of about 150 MPa. We deposited 6.5-layer pairs of silicon-rich SiN_x/SiO_y-distributed Bragg reflector (DBR) micro-electro-mechanical system (MEMS) mirror that covers the whole 1300 and 1550 nm range. Cavity architectures of 6.5 top and 6 bottom layer-pairs were fabricated in the clean room providing a variety of cavity lengths between 0.615 µm and 2.85 µm. These lengths were then simulated in order to estimate the Young’s Modulus of silicon-rich SiN_x, obtaining values from 56 to 92 GPa. One of the designs was characterised electro-thermally providing a tuning range of at least 86.7 nm centred at 1585 nm. The tunable filters are well suitable for implementation as tuning element in lasers for optical coherence tomography. Full article

In this study, hydrophobic poly(hexafluorobutyl acrylate) (PHFBA) thin films were successfully deposited over a large area of 25 × 50 cm using plasma-enhanced chemical vapor deposition (PECVD). Key parameters, including plasma power and the distance between the plasma antenna and the substrate, were optimized to achieve the highest deposition rate while ensuring uniformity and defect-free coatings. The optimal conditions were determined as 5 W plasma power and a 9 cm antenna–substrate distance, yielding a maximum deposition rate of 11.3 nm/min. PHFBA’s low fluorine content makes it a more environmentally and biologically friendly alternative compared to heavily fluorinated polymers, addressing concerns about toxicity and environmental impact. The coatings were applied to a flexible and wetting-sensitive paper towel substrate, which was successfully coated without any visible defects. The contact angle measurements confirmed the hydrophobic nature of the films, with a maximum water contact angle of 131.9° after the deposition of PHFBA. This study highlights the potential of PECVD as an efficient and scalable method for producing hydrophobic coatings, combining high-performance properties with improved environmental considerations. The results not only validate PECVD as a scalable and precise method for thin film fabrication but also open new possibilities for its use in applications requiring durable and functional surface modifications. Full article

The in situ combination of plasma-enhanced chemical vapor deposition (PECVD) and vacuum evaporation in the same vacuum chamber allowed us to integrate germanium nanocrystals (Ge NCs) into hydrogenated amorphous silicon carbide (a-SiC:H) thin films deposited from monomethyl silane diluted with hydrogen. Transmission electron microscopy (TEM) and energy-dispersive X-ray (EDX) spectroscopy were used for the microscopic characterization, while photothermal deflection spectroscopy (PDS) and near-infrared photoluminescence spectroscopy (NIR PL) were for optical characterization. The presence of Ge NCs embedded in the amorphous a-Si:C:H thin films was confirmed by TEM and EDX. The embedded Ge NCs increased optical absorption in the NIR spectral region. The quenching of a-SiC:H NIR PL due to the presence of Ge indicates that the diffusion length of free charge carriers in a-SiC:H is in the range of a few tens of nm, an order of magnitude less than in a-Si:H. The optical properties of a-SiC:H films were degraded after vacuum annealing at 550 °C. Full article

This study explores the low-temperature synthesis of graphene using plasma-enhanced chemical vapor deposition (PECVD), emphasizing the optimization of process parameters to achieve controlled growth of pristine and hydrogenated graphene. Graphene films were synthesized at temperatures ranging from 700 °C to as low as 400 °C by varying methane (25–100 sccm) and hydrogen (25–100 sccm) gas flow rates under 10–20 mBar pressures. Raman spectroscopy revealed structural transitions: pristine graphene grown at 700 °C exhibited strong 2D peaks with an I(2D)/I(G) ratio > 2, while hydrogenated graphene synthesized at 500 °C showed increased defect density with an I(D)/I(G) ratio of ~1.5 and reduced I(2D)/I(G) (~0.8). At 400 °C, the material transitioned to a highly hydrogenated amorphous carbon film, confirmed by photoluminescence (PL) in the Raman spectra. Atomic force microscopy (AFM) showed pristine graphene with a root mean square roughness (R_q) of 0.37 nm. By carefully adjusting PECVD synthesis parameters, it was possible to tune the surface roughness of hydrogenated graphene to levels close to that of pristine graphene or to achieve even smoother surfaces. Conductive AFM measurements revealed that hydrogenation could enhance graphene’s contact current under specific conditions. The findings highlight the role of PECVD parameters in tailoring graphene’s structural, morphological, and electronic properties for diverse applications. This work demonstrates a scalable, low-temperature approach to graphene synthesis, offering the potential for energy storage, sensing, and electronic devices requiring customized material properties. Full article

Hexamethyldisiloxane (HMDSO) is an organosilicon compound with a modifiable bandgap, depending on the deposition conditions. This material has many unique properties due to its stability, low toxicity, and strong adhesion, making it useful as a protective barrier against corrosion, moisture, and oxidation. In this work, HMDSO films were deposited on glass substrates by the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at different deposition times. The optical properties of HMDSO films, such as dielectric permittivity, refractive index, extinction and absorption coefficients, and band gap energy, are inferred from transmission and reflection spectra. As the deposition time increased, the real part of the dielectric constant, the refractive index, and the bandgap energy showed a decrease, dropping from 4.24 to 3.40, from 2.06 to 1.84, and from 2.85 eV to 2.03 eV, respectively. The latter result is determined using classical models such as the O’Leary-Johnson-Lim (‘OJL’) interband transition and the harmonic oscillator model. HMDSO and Silver are used in this study for the fabrication of optical filters using two types of structures, a multiple cavity metal–dielectric (MCMD) and the Fabry–Perot structure. The silver layers are deposited by a sputtering process. The MCMD optical filter shows a higher transmittance of about 30%, but a wide range of wavelengths is transmitted. In contrast, the Fabry–Perot filter showed high contrast but a lower transmittance of about 20%. Full article

Plasma-enhanced chemical vapor deposition (PECVD) was used to obtain several graphite nanowall (GNW)-type films at different deposition times on silicon and copper to achieve various thicknesses of carbonic films for the development of electrochemical sensors for the detection of anthracene. The PECVD growth time varied from 15 min to 30 min to 45 min, while scanning electron microscopy (SEM) confirmed the changes in the thickness of the GNW films, revealing a continuous increase in the series. X-ray diffraction (XRD) analysis revealed that the crystallinity of the GNW film samples increased with increasing crystallite size and decreasing dislocation density as the deposition time increased. Electrochemical characterization of the GNW-based electrodes indicated that the electroactive area and heterogeneous electron transfer rate constant were greater for the GNW 45 min film in the carbonic material series. We present the transfer of GNW films on flexible polyethylene substrates for achieving flexible electrochemical sensors for further use in anthracene determination. The flexible GNW-based electrodes were investigated using differential pulse voltammetry (DPV) in the presence of anthracene. The results showed that the highest sensitivity in anthracene detection was provided by the sensor with the GNW film obtained after 45 min of PECVD growth. The optimization of the GNW film thickness for the development of flexible electrochemical sensors on polyethylene substrates represents a successful approach for enhancing the electrochemical performance of carbonic materials. Full article

In this research, two intermediate layers were deposited on 316L stainless steel to improve the adhesion of diamond-like carbon (DLC) films, one composed of Ti_xAl and produced using the RF sputtering technique with three thicknesses, 100 nm, 200 nm, and 300 nm; the other, interlayer composed of amorphous hydrogenated silicon (a-Si:H). The DLC films were deposited using the pulsed-DC PECVD method with an active screen to achieve the AISI 316L/Ti_xAl//DLC and AISI 316L/TiₓAl/a-Si/DLC configurations. The binding energy between the substrate/Ti_xAl and Ti_xAl/a-Si:H was investigated via X-ray photoelectron spectroscopy with high-resolution spectra. The chemical composition and microstructure of the titanium–aluminum interlayers were investigated using energy-dispersive X-ray spectroscopy and X-ray diffraction, and the microstructure of the DLC coatings was studied using Raman spectroscopy. The coatings’ adherence was measured using scratch and indentation tests, and the hardness of the DLC coatings was determined with the nanoindentation test. The X-ray diffractograms did not allow the determination of any crystalline structure in the Ti_xAl interlayers. The XPS results showed that between the AISI 316L substrate and the Ti_xAl intermediate layer, Ti-O-Fe and FeAl₂O₄ were formed. On the other hand, at the Ti_xAl/a-Si:H interface, TiSi₂ and Al₂SiO₅ compounds were identified. The DLC coatings grew as hydrogenated amorphous carbon with a hydrogen content of around 30 at.% and a hardness of 24 GPa. The deposition methods used and the Ti_xAl/a-Si:H interlayers allowed the obtainment of adherent DLC coatings on AISI 316L stainless steel substrates. High critical load values of about 30 N were obtained. The novelty of this work is underscored by the absence of previous studies that thoroughly examine the bonds present in interlayers used as gradients to enhance the adhesion of DLC. Full article

The high surface area and transfer-less growth of graphene on dielectric materials is still a challenge in the production of novel sensing devices. We demonstrate a novel approach to graphene synthesis on a C-plane sapphire substrate, involving the microwave plasma-enhanced chemical vapor deposition (MW-PECVD) technique. The decomposition of methane, which is used as a precursor gas, is achieved without the need for remote plasma. Raman spectroscopy, atomic force microscopy and resistance characteristic measurements were performed to investigate the potential of graphene for use in sensing applications. We show that the thickness and quality of graphene film greatly depend on the CH₄/H₂ flow ratio, as well as on chamber pressure during the synthesis. By varying these parameters, the intensity ratio of Raman D and G bands of graphene varied between ~1 and ~4, while the 2D to G band intensity ratio was found to be 0.05–0.5. Boundary defects are the most prominent defect type in PECVD graphene, giving it a grainy texture. Despite this, the samples exhibited sheet resistance values as low as 1.87 kΩ/□. This reveals great potential for PECVD methods and could contribute toward efficient and straightforward graphene growth on various substrates. Full article