Search Results (34)

This study investigates the interfacial structural origin of enhanced optical performance in InP-based quantum dots (QDs) employing a 2-step ZnSe shelling strategy. By comparing InP/ZnSe/ZnS QDs synthesized via 1-step and 2-step shelling methods using identical InP cores, we demonstrate that the 2-step approach results in improved core–shell lattice matching, more favorable carrier dynamics, and enhanced thermal stability. These enhancements are attributed to the formation of an initial thin ZnSe interfacial layer, which facilitates uniform shell growth and suppresses interfacial defect formation. High-resolution transmission electron microscopy and elemental mapping via energy-dispersive X-ray spectroscopy analyses confirm the improved crystallinity and reduced oxygen-related trap states in the 2-step samples. The findings highlight the critical role of interfacial control in determining QD performance and establish the 2-step ZnSe shelling strategy as an effective route to achieving structurally and optically robust QD emitters for advanced optoelectronic applications. Full article

Organic photodetectors (OPDs) offer considerable promise for low-power, solution-processable biosensing and imaging applications; however, their performance remains limited by spectral mismatch and interfacial trap states. In this study, a highly sensitive polymer photodiode was developed via trace incorporation (0.8 wt%) of InP/ZnSe/ZnS quantum dots (QDs) into a PTB7-Th:PC₇₁BM bulk heterojunction (BHJ) matrix. This QD doping approach enhanced the external quantum efficiency (EQE) across the 540–660 nm range and suppressed the dark current density at −2 V by passivating interface trap states. Despite a slight decrease in optical absorption at the optimized composition, the internal quantum efficiency (IQE) increased significantly from ~80% to nearly 95% resulting in a net EQE improvement. This suggests that QD incorporation improved charge transport without compromising charge separation efficiency. As a result, the device achieved a specific detectivity (D*) of 1.8 × 10¹³ Jones, representing a 93% improvement over binary BHJs, along with an ultra-low dark current density of 7.76 × 10⁻¹⁰ A/cm². Excessive QD loading, however, led to optical losses and increased dark current, underscoring the need for precise compositional control. Furthermore, the enhanced detectivity led to a 4 dB improvement in the signal-to-noise ratio (SNR) of photoplethysmography (PPG) signals in the target wavelength range, enabling more reliable biophotonic sensing without increased power consumption. This work demonstrates that QD-based spectral and interfacial engineering offers an effective and scalable route for advancing the performance of OPDs, with broad applicability to low-power biosensors and high-resolution polymer–QD imaging systems. Full article

Abstract: Quantum dot–polymer composites have the advantages of high luminescent quantum yield (PLQY), narrow emission half-peak full width (FWHM), and tunable emission spectra, and have broad application prospects in display and lighting fields. Research on quantum dots embedded in polymer films and plates has made great progress in both synthesis technology and optical properties. However, due to the shortcomings of quantum dots, such as cadmium selenide (CdSe), indium phosphide (InP), lead halide perovskite (LHP), poor water, oxygen, and light stability, and incapacity for large-scale synthesis, their practical application is still restricted. Various polymers, such as methyl methacrylate (PMMA), polyethylene terephthalate (PET), polystyrene (PS), polyvinylidene fluoride (PVDF), polypropylene (PP), etc., are widely used in packaging quantum dot materials because of their high plasticity, simple curing, high chemical stability, and good compatibility with quantum dot materials. This paper focuses on the application and development of quantum dot–polymer materials in the field of backlight displays, summarizes and expounds the synthesis strategies, advantages, and disadvantages of different quantum dot–polymer materials, provides inspiration for the optimization of quantum dot–polymer materials, and promotes their application in the field of wide-color-gamut backlight display. Full article

Ternary In_1−xGa_xP quantum dots (QDs) have emerged as promising materials for efficient blue emission, owing to their tunable bandgap, high stability, and superior optoelectronic properties. However, most reported methods for Ga incorporation into the InP structure have predominantly relied on cation exchange in pre-grown InP QDs at elevated temperatures above 280 °C. This is largely due to the fact that, when heating In and P precursors in the presence of Ga, an InP/GaP core–shell structure readily forms. Herein, we introduce a novel synthesis approach using the indium precursor [In(btsa)₂Cl]₂ and GaI₃ to fabricate In_1−xGa_xP QDs in a single step at relatively low temperatures (200 °C). By adjusting the GaI₃ content, we achieved controlled emission tuning from red to blue. Structural and compositional analysis through X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirmed successful Ga³⁺ incorporation into the QD core, with a corresponding blue shift in the emission as GaI₃ content increased. The synthesized QDs demonstrated a photoluminescence quantum yield (PLQY) of ~50% and a full width at half maximum (FWHM) of 45~62 nm, highlighting the potential of this synthesis method for advanced optoelectronic applications. Full article

The utilization of InP-based quantum dots (QDs) as alternative luminescent nanoparticles to cadmium-based QDs is actively pursued. However, leveraging their luminescence for solid-state applications presents challenges due to the sensitivity of InP QDs to oxidation and aggregation-caused quenching. Hence, an appealing strategy is to protect and disperse InP QDs within hybrid materials. Metal–organic frameworks (MOFs) offer a promising solution as readily available crystalline porous materials. Among these, MOF-5 (composed of {Zn₄O}⁶⁺ nodes and terephthalate struts) can be synthesized under mild conditions (at room temperature and basic pH), making it compatible with InP QDs. In the present work, luminescent InP/ZnS QDs are successfully incorporated within MOF-5 by two distinct methods. In the bottle around the ship (BAS) approach, the MOF was synthesized around the QDs. Alternatively, in the ship in the bottle (SIB) strategy, the QDs were embedded via capillarity into a specially engineered, more porous variant of MOF-5. Comparative analysis of the BAS and SIB approaches, evaluating factors such as operational simplicity, photoluminescence properties, and the resistance of the final materials to leaching were carried out. This comparative study provides insights into the efficacy of these strategies for the integration of InP/ZnS QDs within MOF-5 for potential solid-state applications in materials chemistry. Full article

There is increased interest in the conversion of solar energy into green chemical energy because of the depletion of fossil fuels and their unpleasant environmental effect. Photocatalytic hydrogen generation from water involves the direct conversion of solar energy into H₂ fuels, which exhibits significant advantages and immense promise. Nevertheless, photocatalytic efficiency is considerably lower than the standard range of industrial applications. Low light absorption efficiency, the rapid recombination of photogenerated electrons and holes, slow surface redox reaction kinetics and low photostability are well known to be key factors negatively affecting photocatalytic hydrogen production. Therefore, to construct highly efficient and stable photocatalysts is important and necessary for the development of photocatalytic hydrogen generation technology. In this review, quantum dots (QDs)-based photocatalysts have emerged with representative achievements. Due to their excellent light-harvesting ability, low recombination efficiency of photogenerated electrons and holes, and abundant surface active sites, QDs have attracted remarkable interest as photocatalysts and/or cocatalyst for developing highly efficient photocatalysts. In this review, the application of QDs for photocatalytic H₂ production is emphatically introduced. First, the special photophysical properties of QDs are briefly described. Then, recent progress into the research on QDs in photocatalytic H₂ production is introduced, in three types: semiconductor QDs (e.g., CdS, CdMnS, and InP QDs), metal QDs (e.g., Au, Pt and Ag QDs), and MXene QDs and carbon QDs (CDQs). Finally, the challenges and prospects of photocatalytic H₂ evolution with QDs in the future are discussed. Full article

This work highlights the novel approach of incorporating potassium iodide (KI) doping during the synthesis of In_0.53P_0.47 core quantum dots (QDs) to significantly reduce the concentration of vacancies (i.e., In vacancies; V_In⁻) within the bulk of the core QD and inhibit the formation of InPO_x at the core QD–Zn_0.6Se_0.4 shell interfaces. The photoluminescence quantum yield (PLQY) of ~97% and full width at half maximum (FWHM) of ~40 nm were achieved for In_0.53P_0.47/Zn_0.6Se_0.4/Zn_0.6Se_0.1S_0.3/Zn_0.5S_0.5 core/multi-shell QDs emitting red light, which is essential for a quantum-dot organic light-emitting diode (QD-OLED) without red, green, and blue crosstalk. KI doping eliminated V_In⁻ in the core QD bulk by forming K⁺-V_In⁻ substitutes and effectively inhibited the formation of InPO₄(H₂O)₂ at the core QD–Zn_0.6Se_0.4 shell interface through the passivation of phosphorus (P)-dangling bonds by P-I bonds. The elimination of vacancies in the core QD bulk was evidenced by the decreased relative intensity of non-radiative unpaired electrons, measured by electron spin resonance (ESR). Additionally, the inhibition of InPO₄(H₂O)₂ formation at the core QD and shell interface was confirmed by the absence of the {210} X-ray diffraction (XRD) peak intensity for the core/multi-shell QDs. By finely tuning the doping concentration, the optimal level was achieved, ensuring maximum K-V_In⁻ substitution, minimal K⁺ and I⁻ interstitials, and maximum P-dangling bond passivation. This resulted in the smallest core QD diameter distribution and maximized optical properties. Consequently, the maximum PLQY (~97%) and minimum FWHM (~40 nm) were observed at 3% KI doping. Furthermore, the color gamut of a QD-OLED display using R-, G-, and B-QD functional color filters (i.e., ~131.1%@NTSC and ~98.2@Rec.2020) provided a nearly perfect color representation, where red-light-emitting KI-doped QDs were applied. Full article

At present, heavy-metal-free quantum dot light-emitting diodes (QLEDs) have shown great potential as a research hotspot in the field of optoelectronic devices. This article reviews the research on heavy-metal-free quantum dot (QD) materials and light-emitting diode (LED) devices. In the first section, we discussed the hazards of heavy-metal-containing quantum dots (QDs), such as environmental pollution and human health risks. Next, the main representatives of heavy-metal-free QDs were introduced, such as InP, ZnE (E=S, Se and Te), CuInS₂, Ag₂S, and so on. In the next section, we discussed the synthesis methods of heavy-metal-free QDs, including the hot injection (HI) method, the heat up (HU) method, the cation exchange (CE) method, the successful ionic layer adsorption and reaction (SILAR) method, and so on. Finally, important progress in the development of heavy-metal-free QLEDs was summarized in three aspects (QD emitter layer, hole transport layer, and electron transport layer). Full article

Quantum dots (QDs) are promising semiconductor nanocrystals in photocatalysis due to their unique properties and in contrast to bulk semiconductors. Different from the traditional modification methods of indium phosphide (InP) QDs such as metal doping, shell design, and surface ligand modification, we firstly constructed the indium phosphide quantum dot and carbon quantum dot (InP QDs/CQDs) system and used it for the study of photocatalytic hydrogen production from hydrogen sulfide (H₂S) in this work. The photocatalytic performance tests show that the average rate of photocatalytic decomposition of hydrogen sulfide to produce hydrogen of the InP QDs/CQDs system increases by 2.1 times in contrast to InP QDs alone. The steady-state and time-resolved photoluminescence spectra demonstrated that the introduction of CQDs can effectively improve the separation efficiency of photo-generated carriers. In addition, the surface electronegativity of the InP QDs/CQDs system is weaker than that of InP QDs, which may reduce the repulsion between the photocatalyst and reaction substrate, promoting the surface oxidation reaction in the photocatalytic process. This work indicates that the construction of the QDs hybrid system can improve their photocatalytic performance, providing a way to optimize QDs in photocatalysis. Full article

Quantum dot light-emitting diodes (QLEDs) have been identified as a next-generation display technology owing to their low-cost manufacturing, wide color gamut, and electrically driven self-emission properties. However, the efficiency and stability of blue QLEDs still pose a significant challenge, limiting their production and potential application. This review aims to analyse the factors leading to the failure of blue QLEDs and presents a roadmap to accelerate their development based on the progress made in the synthesis of II-VI (CdSe, ZnSe) quantum dots (QDs), III-V (InP) QDs, carbon dots, and perovskite QDs. The proposed analysis will include discussions on material synthesis, core-shell structures, ligand interactions, and device fabrication, providing a comprehensive overview of these materials and their development. Full article

Saturable absorption in perovskite quantum dot (PQD) films, leading to saturation in photoluminescence (PL), is reported. PL of drop-casting films was used to probe how excitation intensity and host–substrate influence the growth of PL intensity. The PQD films were deposited on single-crystal GaAs, InP, Si wafers and glass. Saturable absorption was confirmed through PL saturation in all films, with different excitation intensity thresholds, suggesting strong substrate-dependent optical properties, resulting from absorption nonlinearities in the system. The observations extend our former studies (Appl. Phys. Lett., 2021, 119, 19, 192103), wherein we pointed out that the PL saturation in QDs can be used to create all-optical switches in combination with a bulk semiconductor host. Full article

In typical color-by-blue mode-based quantum dot (QD) display devices, only part of the blue excitation light is absorbed by QD emitters, thus it is accompanied by the leakage of blue light through the devices. To address this issue, we offer, for the first time, the applicability of AuAg alloy nanoparticles (NPs) as effective blue light absorbers in InP QD-based color-by-blue platforms. For this, high-quality fluorescent green and red InP QDs with a double shell scheme of ZnSe/ZnS were synthesized and embedded in a transparent polymer film. Separately, a series of Au/Ag ratio-varied AuAg NPs with tunable plasmonic absorption peaks were synthesized. Among them, AuAg NPs possessing the most appropriate absorption peak with respect to spectral overlap with blue emission are chosen for the subsequent preparation of AuAg NP polymeric films with varied NP concentrations. A stack of AuAg NP polymeric film on top of InP QD film is then placed remotely on a blue light-emitting diode, successfully resulting in systematically progressive suppression of blue light leakage with increasing AuAg NP concentration. Furthermore, the beneficial function of the AuAg NP polymeric overlayer in mitigating undesirable QD excitation upon exposure to ambient lights was further examined. Full article

Plentiful research of InP semiconductor quantum dots (QDs) has been launched over the past few decades for their excellent photoluminescence properties and environmentally friendly characteristics in various applications. However, InP QDs show inferior photostability because they are extremely sensitive to the ambient environment. In this study, we propose a novel method to enhance the photostability of InP/ZnSe/ZnS QDs by doping zirconium into the ZnS layer. We certify that Zr can be oxidized to Zr oxides, which can prevent the QDs from suffering oxidation during light irradiation. The InP/ZnSe/ZnS:Zr QDs maintained 78% of the original photoluminescence quantum yields without significant photodegradation under the irradiation of LED light (450 nm, 3.0 W power intensity) for 14 h, while conventional InP/ZnSe/ZnS QDs dramatically decreased to 29%. Full article

Quantum dots (QDs) are widely used in optoelectronics, lighting, and photovoltaics leading to their potential release into the environment. The most promising alternative to the highly toxic cadmium selenide (CdSe) QDs are indium phosphide (InP) QDs, which show reduced toxicity and comparable optical and electronic properties. QD degradation leads to the release of toxic metal ions into the environment. Coating the QD core with robust shell(s) composed of another semi-conductor material enhances their properties and protects the QD from degradation. We recently developed double-shelled InP QDs, which proved to be less toxic than single-shell QDs. In the present study, we confirm their reduced cytotoxicity, with an LC50 at 77 nM for pristine gradient shell QDs and >100 nM for pristine thin and thick shell QDs. We also confirm that these three QDs, when exposed to simulated sunlight, show greater cytotoxicity compared to pristine ones, with LC50 ranging from 15 to 23 nM. Using a combination of spectroscopic and microscopic techniques, we characterize the degradation kinetics and transformation products of single- and double-shell QDs, when exposed to solar light at high temperature, simulating environmental conditions. Non-toxic pristine QDs degrade to form toxic In–phosphate, In–carboxylate, Zn–phosphate, and oxidized Se, all of which precipitate as heterogeneous deposits. Comparison of their degradation kinetics highlights that the QDs bearing the thickest ZnS outer shell are, as expected, the most resistant to photodegradation among the three tested QDs, as gradient shell, thin shell, and thick shell QDs lose their optical properties in less than 15 min, 60 min, and more than 90 min, respectively. They exhibit the highest photoluminescence efficiency, i.e., the best functionality, with a photoluminescence quantum yield in aqueous solution of 24%, as compared to 18% for the gradient shell and thin shell QDs. Therefore, they can be considered as safer-by-design QDs. Full article

Indium phosphide (InP) colloidal quantum dots (CQDs) have generated great interest as next-generation light-emitting materials owing to their narrow emission spectra and environment-friendly components. The minimized surface defects is essential to achieve narrow full-width at half-maximum (FWHM) and high photoluminescence quantum yield (PLQY). However, InP CQDs are readily oxidized in ambient condition, which results in formation of oxidation defect states on the surface of InP CQDs. Herein, we introduce a strategy to successfully passivate the surface defects of InP core by zinc complexes. The zinc carboxylates passivation reduces FWHM of InP CQDs from 130 nm to 70 nm and increases PLQY from 1% to 14% without shelling. Furthermore, the photoluminescence (PL) peak has shifted from 670 nm to 510 nm with an increase of zinc carboxylates passivation, which suggests that excessive zinc carboxylates functions as a size-regulating reagent in the synthesis. Full article