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Keywords = EG-FET

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10 pages, 1608 KiB  
Article
A Reflection-Based Ultra-Fast Measurement Method for the Continuous Characterization of Self-Heating for Advanced MOSFETs
by Wei Liu, Guoqixin Huang, Yaru Ding, Chu Yan, Xinwei Yu, Liang Zhao and Yi Zhao
Electronics 2025, 14(13), 2634; https://doi.org/10.3390/electronics14132634 - 30 Jun 2025
Viewed by 262
Abstract
As semiconductor devices approach the sub-10 nm technology node, the self-heating effect (SHE) induced by confined geometries (e.g., FinFETs and nanosheet FETs) has emerged as a critical bottleneck affecting both performance and reliability. This challenge has prompted extensive research efforts to develop advanced [...] Read more.
As semiconductor devices approach the sub-10 nm technology node, the self-heating effect (SHE) induced by confined geometries (e.g., FinFETs and nanosheet FETs) has emerged as a critical bottleneck affecting both performance and reliability. This challenge has prompted extensive research efforts to develop advanced characterization methodologies to investigate this effect and its corresponding influence on the device’s reliability issues. In this paper, we propose reflection-based ultra-fast measurement techniques for the continuous monitoring of the self-heating effect in advanced MOSFETs. With this approach, the self-heating effect-induced degradation of transistor drain current and the real-time temperature change can be continuously captured using a digital phosphor oscilloscope on a nanosecond scale. The thermal time constant of 17 ns and the thermal resistance of 34,000 K/W have been extracted for the short channel transistors used in this study with the help of this new characterization method. This reflection-based method is useful for the fast extraction of the thermal time constant and thermal resistance and for the continuous monitoring of current degradation as well as the real-time temperature. Therefore, this new characterization method is beneficial for the evaluation of the self-heating effect in advanced ultra-scaled MOSFETs. Full article
(This article belongs to the Section Semiconductor Devices)
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24 pages, 1093 KiB  
Review
Electrochemical Aptamer-Based Biosensors for Sepsis Diagnosis: Recent Advances, Challenges, and Future Perspectives (2020–2025)
by Ling Ling Tan and Nur Syamimi Mohamad
Biosensors 2025, 15(7), 402; https://doi.org/10.3390/bios15070402 - 20 Jun 2025
Viewed by 828
Abstract
Sepsis remains a global health emergency, demanding timely and accurate diagnostics to reduce morbidity and mortality. This review critically assesses the recent progress (2020–2025) in the development of electrochemical aptamer-based biosensors for sepsis detection. These biosensors combine aptamers’ high specificity and modifiability with [...] Read more.
Sepsis remains a global health emergency, demanding timely and accurate diagnostics to reduce morbidity and mortality. This review critically assesses the recent progress (2020–2025) in the development of electrochemical aptamer-based biosensors for sepsis detection. These biosensors combine aptamers’ high specificity and modifiability with the sensitivity and miniaturization potential of electrochemical platforms. The analysis highlights notable advances in detecting key sepsis biomarkers, such as C-reactive protein (CRP), procalcitonin (PCT), interleukins (e.g., interleukin-6 (IL-6), tumor necrosis factor-alpha (TNF-α)), lipopolysaccharides (LPSs), and microRNAs using diverse sensor configurations, including a field-effect transistor (FET), impedance spectroscopy, voltammetry, and hybrid nanomaterial-based systems. A comparative evaluation reveals promising analytical performance in terms of the limit of detection (LOD), rapid response time, and point-of-care (POC) potential. However, critical limitations remain, including variability in validation protocols, limited testing in real clinical matrices, and challenges in achieving multiplexed detection. This review underscores translational barriers and recommends future directions focused on clinical validation, integration with portable diagnostics, and interdisciplinary collaboration. By consolidating current developments and gaps, this work provides a foundation for guiding next-generation biosensor innovations aimed at effective sepsis diagnosis and monitoring. Full article
(This article belongs to the Section Biosensor and Bioelectronic Devices)
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13 pages, 6356 KiB  
Article
Detection of Ascorbic Acid in Tears with an Extended-Gate Field-Effect Transistor-Based Electronic Tongue Made of Electropolymerized Porphyrinoids on Laser-Induced Graphene Electrodes
by Kishore Pushparaj, Lorena Di Zazzo, Valerio Allegra, Rosamaria Capuano, Alexandro Catini, Gabriele Magna, Roberto Paolesse and Corrado Di Natale
Chemosensors 2025, 13(3), 108; https://doi.org/10.3390/chemosensors13030108 - 15 Mar 2025
Viewed by 1105
Abstract
Porphyrinoids are suitable sensitive materials for potentiometric electronic tongues. In this paper, we take advantage of these properties to develop an electronic tongue using an extended-gate field-effect transistor as a signal transducer. The sensitive films were made of different porphyrins and corroles electropolymerized [...] Read more.
Porphyrinoids are suitable sensitive materials for potentiometric electronic tongues. In this paper, we take advantage of these properties to develop an electronic tongue using an extended-gate field-effect transistor as a signal transducer. The sensitive films were made of different porphyrins and corroles electropolymerized in situ onto laser-induced graphene electrodes. The electronic tongue was duly characterized with respect to ascorbic acid, a common natural antioxidant. The sensors were shown to be sensitive and selective with respect to common interferents, such as dopamine and uric acid. Finally, the sensors were tested to detect ascorbic acid in artificial tears. Full article
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12 pages, 4491 KiB  
Communication
Label-Free Extended Gate Field-Effect Transistor for Sensing Microcystin-LR in Freshwater Samples
by Sondavid Nandanwar, Songyi Lee, Myeongkee Park and Hak Jun Kim
Sensors 2025, 25(5), 1587; https://doi.org/10.3390/s25051587 - 5 Mar 2025
Cited by 1 | Viewed by 1075
Abstract
In this study, we developed a label-free biosensor based on aptamer-modified multi-walled carbon nanotube extended gate field-effect transistor (MWCNT-EG-FET) for easy and selective detection of microcystin-LR (MC-LR), a prominent cyanotoxin associated with liver damage, bleeding, and necrosis. EG-FET had two parts: a MOSFET [...] Read more.
In this study, we developed a label-free biosensor based on aptamer-modified multi-walled carbon nanotube extended gate field-effect transistor (MWCNT-EG-FET) for easy and selective detection of microcystin-LR (MC-LR), a prominent cyanotoxin associated with liver damage, bleeding, and necrosis. EG-FET had two parts: a MOSFET and an extended-gate Au/SiO2 electrode, which serves as the sensitive membrane. A custom-designed DNA oligonucleotide (5-NH2-C6-AN6) was used as MC-LR-targeting aptamer (MCTA). MWCNTs were functionalized with MCTA and then stably fixed on the sensitive membrane. The detection of MC-LR in freshwater was effectively achieved within 5 min by assessing the variations in electrical resistance that occur due to the selective interactions between MC-LR and MCTA. The detection limit and analytical sensitivity of the biosensor for MC-LR were found to be 0.134 ng/mL and 0.024 ng/mL, respectively. The sensitive membrane could be readily discarded if damaged, eliminating the need to replace the main transducer MOSFET. The developed sensor exhibits features such as straightforward preparation, swift response, potential for miniaturization, and ease of use, making it an attractive candidate for future integrated lab-on-chip systems for MC-LR detection in freshwater environments. Full article
(This article belongs to the Collection Sensors and Biosensors for Environmental and Food Applications)
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18 pages, 2946 KiB  
Article
Integrating an Extended-Gate Field-Effect Transistor in Microfluidic Chips for Potentiometric Detection of Creatinine in Urine
by Dhaniella Cristhina De Brito Oliveira, Fernando Henrique Marques Costa, Renato Massaroto Beraldo, José Alberto Fracassi da Silva and José Alexandre Diniz
Sensors 2025, 25(3), 779; https://doi.org/10.3390/s25030779 - 28 Jan 2025
Viewed by 1096
Abstract
Monitoring creatinine levels in urine helps to recognize kidney dysfunction. In this research, we developed a photocurable membrane for the detection of serum creatinine. Using a system based on field-effect transistors, we carried out creatinine quantification in synthetic urine. The device was able [...] Read more.
Monitoring creatinine levels in urine helps to recognize kidney dysfunction. In this research, we developed a photocurable membrane for the detection of serum creatinine. Using a system based on field-effect transistors, we carried out creatinine quantification in synthetic urine. The device was able to cover values between 3 and 27 mmol L−1. The current sensitivity was 0.8529 (mA)1/2 mmol−1 L with 91.8% linearity, with the LOD and LOQ being 5.3 and 17.5 mmol L−1, respectively. The voltage sensitivity was 0.71 mV mmol−1 L with a linearity of 96.2%, with the LOD and LOQ being 4.2 and 14.0 mmol L−1, respectively. These data were obtained under flow conditions. The system performed very well during the measurements, with a hysteresis of about 1.1%. Up to 90 days after manufacture, the sensor still maintained more than 70% of its initial response. Even when used periodically during the first week and then stored unused at −18 °C, it was able to maintain 96.7% of its initial response. The device used in the flow setup only had a useful life of three days due to membrane saturation, which was not reversible. In the interference test, the membrane was also shown to respond to the urea molecule, but in a different response window, which allowed us to discriminate urea in synthetic urine. EGFETs can be used to identify variations in the creatinine concentration in urine and can help in therapeutic decision-making. Full article
(This article belongs to the Special Issue 3D Printed Sensors: Innovations and Applications)
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38 pages, 8695 KiB  
Review
Polymer Dielectric-Based Emerging Devices: Advancements in Memory, Field-Effect Transistor, and Nanogenerator Technologies
by Wangmyung Choi, Junhwan Choi, Yongbin Han, Hocheon Yoo and Hong-Joon Yoon
Micromachines 2024, 15(9), 1115; https://doi.org/10.3390/mi15091115 - 31 Aug 2024
Cited by 5 | Viewed by 3697
Abstract
Polymer dielectric materials have recently attracted attention for their versatile applications in emerging electronic devices such as memory, field-effect transistors (FETs), and triboelectric nanogenerators (TENGs). This review highlights the advances in polymer dielectric materials and their integration into these devices, emphasizing their unique [...] Read more.
Polymer dielectric materials have recently attracted attention for their versatile applications in emerging electronic devices such as memory, field-effect transistors (FETs), and triboelectric nanogenerators (TENGs). This review highlights the advances in polymer dielectric materials and their integration into these devices, emphasizing their unique electrical, mechanical, and thermal properties that enable high performance and flexibility. By exploring their roles in self-sustaining technologies (e.g., artificial intelligence (AI) and Internet of Everything (IoE)), this review emphasizes the importance of polymer dielectric materials in enabling low-power, flexible, and sustainable electronic devices. The discussion covers design strategies to improve the dielectric constant, charge trapping, and overall device stability. Specific challenges, such as optimizing electrical properties, ensuring process scalability, and enhancing environmental stability, are also addressed. In addition, the review explores the synergistic integration of memory devices, FETs, and TENGs, focusing on their potential in flexible and wearable electronics, self-powered systems, and sustainable technologies. This review provides a comprehensive overview of the current state and prospects of polymer dielectric-based devices in advanced electronic applications by examining recent research breakthroughs and identifying future opportunities. Full article
(This article belongs to the Special Issue Organic Semiconductors and Devices, 2nd Edition)
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13 pages, 2616 KiB  
Article
Enhancement of Ion-Sensitive Field-Effect Transistors through Sol-Gel Processed Lead Zirconate Titanate Ferroelectric Film Integration and Coplanar Gate Sensing Paradigm
by Dong-Gyun Mah, Seong-Moo Oh, Jongwan Jung and Won-Ju Cho
Chemosensors 2024, 12(7), 134; https://doi.org/10.3390/chemosensors12070134 - 9 Jul 2024
Cited by 2 | Viewed by 1715
Abstract
To facilitate the utility of field effect transistor (FET)-type sensors, achieving sensitivity enhancement beyond the Nernst limit is crucial. Thus, this study proposed a novel approach for the development of ferroelectric FETs (FeFETs) using lead zirconate titanate (PZT) ferroelectric films integrated with indium–tungsten [...] Read more.
To facilitate the utility of field effect transistor (FET)-type sensors, achieving sensitivity enhancement beyond the Nernst limit is crucial. Thus, this study proposed a novel approach for the development of ferroelectric FETs (FeFETs) using lead zirconate titanate (PZT) ferroelectric films integrated with indium–tungsten oxide (IWO) channels synthesized via a cost-effective sol-gel process. The electrical properties of PZT-IWO FeFET devices were significantly enhanced through the strategic implementation of PZT film treatment by employing intentional annealing procedures. Consequently, key performance metrics, including the transfer curve on/off ratio and subthreshold swings, were improved. Moreover, unprecedented electrical stability was realized by eliminating the hysteresis effect during double sweeps. By leveraging a single-gate configuration as an FeFET transformation element, extended-gate (EG) detection methodologies for pH sensing were explored, thereby introducing a pioneering dimension to sensor architecture. A measurement paradigm inspired by plane gate work was adopted, and the proposed device exhibited significant resistive coupling, consequently surpassing the sensitivity thresholds of conventional ion-sensitive field-effect transistors. This achievement represents a substantial paradigm shift in the landscape of ion-sensing methodologies, surpassing the established Nernst limit (59.14 mV/pH). Furthermore, this study advances FeFET technology and paves the way for the realization of highly sensitive and reliable ion sensing modalities. Full article
(This article belongs to the Collection pH Sensors, Biosensors and Systems)
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3 pages, 461 KiB  
Abstract
Non-Stoichiometric Titanium-Oxide Gate Electrodes for EGFET Based pH Sensors
by Zsombor Szomor, Lilia Bató, Silvia Stágl, Orsolya Hakkel, Attila Sulyok, Csaba Dücső, Zsófia Baji and Péter Fürjes
Proceedings 2024, 97(1), 193; https://doi.org/10.3390/proceedings2024097193 - 17 Apr 2024
Viewed by 1027
Abstract
A compact pH measuring electrochemical sensor module was developed for Smart Multi-Well Plates (SMWP) applicable for highly parallelized cell culture analysis using incorporated Organ-on-Chip devices. A specific electronic architecture was designed and manufactured containing an extended gate field effect transistor as the transducer [...] Read more.
A compact pH measuring electrochemical sensor module was developed for Smart Multi-Well Plates (SMWP) applicable for highly parallelized cell culture analysis using incorporated Organ-on-Chip devices. A specific electronic architecture was designed and manufactured containing an extended gate field effect transistor as the transducer device. Electrochemical electrodes were functionalized using pH sensitive metal-oxides and applied as the gate material. The composition and the related pH sensitivity of differently deposited materials were characterized and the suitability of ALD-deposited, non-stoichiometric titanium oxide (TiOx) for sensitive pH measurement was verified showing excellent responses close to the ideal Nernstian slope (59 mV/pH). Full article
(This article belongs to the Proceedings of XXXV EUROSENSORS Conference)
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3 pages, 932 KiB  
Abstract
LIG/ZnO/Porphyrin-Functionalized EGFET-Based Electronic Tongue
by Kishore Pushparaj, Alexandro Catini, Rosamaria Capuano, Leonardo Papale, Valerio Allegra, Gabriele Magna, Gianni Antonelli, Eugenio Martinelli, Yuvaraj Sivalingam, Roberto Paolesse and Corrado di Natale
Proceedings 2024, 97(1), 116; https://doi.org/10.3390/proceedings2024097116 - 28 Mar 2024
Viewed by 1016
Abstract
The use of laser cutter machines to produce porous graphene films is an innovative method for a low-cost production of flexible electrodes for electronics and sensing applications. Here, laser-induced graphene (LIG) is used to produce the gate electrodes of EGFET sensors. LIG electrodes [...] Read more.
The use of laser cutter machines to produce porous graphene films is an innovative method for a low-cost production of flexible electrodes for electronics and sensing applications. Here, laser-induced graphene (LIG) is used to produce the gate electrodes of EGFET sensors. LIG electrodes and LIG electrodes functionalized with ZnO and metalloporphyrin-coated ZnO are used as elements of the electronic tongue. The array is tested in a classical experiment aimed at identifying complex food matrices, such as fruit juices. The results demonstrate the feasibility of the approach and provide a solid basis for further array developments. Full article
(This article belongs to the Proceedings of XXXV EUROSENSORS Conference)
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14 pages, 2596 KiB  
Article
Enhanced BSA Detection Precision: Leveraging High-Performance Dual-Gate Ion-Sensitive Field-Effect-Transistor Scheme and Surface-Treated Sensing Membranes
by Yeong-Ung Kim and Won-Ju Cho
Biosensors 2024, 14(3), 141; https://doi.org/10.3390/bios14030141 - 13 Mar 2024
Cited by 4 | Viewed by 2351
Abstract
Bovine serum albumin (BSA) is commonly incorporated in vaccines to improve stability. However, owing to potential allergic reactions in humans, the World Health Organization (WHO) mandates strict adherence to a BSA limit (≤50 ng/vaccine). BSA detection with conventional techniques is time-consuming and requires [...] Read more.
Bovine serum albumin (BSA) is commonly incorporated in vaccines to improve stability. However, owing to potential allergic reactions in humans, the World Health Organization (WHO) mandates strict adherence to a BSA limit (≤50 ng/vaccine). BSA detection with conventional techniques is time-consuming and requires specialized equipment. Efficient alternatives such as the ion-sensitive field-effect transistor (ISFET), despite rapid detection, affordability, and portability, do not detect BSA at low concentrations because of inherent sensitivity limitations. This study proposes a silicon-on-insulator (SOI) substrate-based dual-gate (DG) ISFET platform to overcome these limitations. The capacitive coupling DG structure significantly enhances sensitivity without requiring external circuits, owing to its inherent amplification effect. The extended-gate (EG) structure separates the transducer unit for electrical signal processing from the sensing unit for biological detection, preventing chemical damage to the transducer, accommodating a variety of biological analytes, and affording easy replaceability. Vapor-phase surface treatment with (3-Aminopropyl) triethoxysilane (APTES) and the incorporation of a SnO2 sensing membrane ensure high BSA detection efficiency and sensitivity (144.19 mV/log [BSA]). This DG-FET-based biosensor possesses a simple structure and detects BSA at low concentrations rapidly. Envisioned as an effective on-site diagnostic tool for various analytes including BSA, this platform addresses prior limitations in biosensing and shows promise for practical applications. Full article
(This article belongs to the Special Issue Transistor‐Based Biosensors: From Theory to Real Devices)
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17 pages, 7770 KiB  
Article
The Traumatic Inoculation Process Affects TSPO Radioligand Uptake in Experimental Orthotopic Glioblastoma
by Lukas Gold, Enio Barci, Matthias Brendel, Michael Orth, Jiying Cheng, Sabrina V. Kirchleitner, Laura M. Bartos, Dennis Pötter, Maximilian A. Kirchner, Lena M. Unterrainer, Lena Kaiser, Sibylle Ziegler, Lorraine Weidner, Markus J. Riemenschneider, Marcus Unterrainer, Claus Belka, Joerg-Christian Tonn, Peter Bartenstein, Maximilian Niyazi, Louisa von Baumgarten, Roland E. Kälin, Rainer Glass, Kirsten Lauber, Nathalie L. Albert and Adrien Holzgreveadd Show full author list remove Hide full author list
Biomedicines 2024, 12(1), 188; https://doi.org/10.3390/biomedicines12010188 - 15 Jan 2024
Viewed by 2588
Abstract
Background: The translocator protein (TSPO) has been proven to have great potential as a target for the positron emission tomography (PET) imaging of glioblastoma. However, there is an ongoing debate about the potential various sources of the TSPO PET signal. This work investigates [...] Read more.
Background: The translocator protein (TSPO) has been proven to have great potential as a target for the positron emission tomography (PET) imaging of glioblastoma. However, there is an ongoing debate about the potential various sources of the TSPO PET signal. This work investigates the impact of the inoculation-driven immune response on the PET signal in experimental orthotopic glioblastoma. Methods: Serial [18F]GE-180 and O-(2-[18F]fluoroethyl)-L-tyrosine ([18F]FET) PET scans were performed at day 7/8 and day 14/15 after the inoculation of GL261 mouse glioblastoma cells (n = 24) or saline (sham, n = 6) into the right striatum of immunocompetent C57BL/6 mice. An additional n = 25 sham mice underwent [18F]GE-180 PET and/or autoradiography (ARG) at days 7, 14, 21, 28, 35, 50 and 90 in order to monitor potential reactive processes that were solely related to the inoculation procedure. In vivo imaging results were directly compared to tissue-based analyses including ARG and immunohistochemistry. Results: We found that the inoculation process represents an immunogenic event, which significantly contributes to TSPO radioligand uptake. [18F]GE-180 uptake in GL261-bearing mice surpassed [18F]FET uptake both in the extent and the intensity, e.g., mean target-to-background ratio (TBRmean) in PET at day 7/8: 1.22 for [18F]GE-180 vs. 1.04 for [18F]FET, p < 0.001. Sham mice showed increased [18F]GE-180 uptake at the inoculation channel, which, however, continuously decreased over time (e.g., TBRmean in PET: 1.20 at day 7 vs. 1.09 at day 35, p = 0.04). At the inoculation channel, the percentage of TSPO/IBA1 co-staining decreased, whereas TSPO/GFAP (glial fibrillary acidic protein) co-staining increased over time (p < 0.001). Conclusion: We identify the inoculation-driven immune response to be a relevant contributor to the PET signal and add a new aspect to consider for planning PET imaging studies in orthotopic glioblastoma models. Full article
(This article belongs to the Special Issue State of the Art and Future Perspectives in Oncologic Imaging)
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14 pages, 2402 KiB  
Article
A ‘Frugal’ EGFET Sensor for Waterborne H2S
by Zahrah Alqahtani and Martin Grell
Sensors 2024, 24(2), 407; https://doi.org/10.3390/s24020407 - 9 Jan 2024
Cited by 3 | Viewed by 1673
Abstract
Hydrogen sulphide (H2S) is a toxic gas soluble in water, H2Saq, as a weak acid. Since H2Saq usually originates from the decomposition of faecal matter, its presence also indicates sewage dumping and possible parallel [...] Read more.
Hydrogen sulphide (H2S) is a toxic gas soluble in water, H2Saq, as a weak acid. Since H2Saq usually originates from the decomposition of faecal matter, its presence also indicates sewage dumping and possible parallel waterborne pathogens associated with sewage. We here present a low footprint (‘frugal’) H2Saq sensor as an accessible resource for water quality monitoring. As a sensing mechanism, we find the chemical affinity of thiols to gold (Au) translates to H2Saq. When an Au electrode is used as a control gate (CG) or floating gate (FG) electrode in the electric double layer (EDL) pool of an extended gate field effect transistor (EGFET) sensor, EGFET transfer characteristics shift along the CG voltage axis in response to H2Saq. We rationalise this by the interface potential from the adsorption of polar H2S molecules to the electrode. The sign of the shift changes between Au CG and Au FG, and cancels when both electrodes are Au. The sensor is selective for H2Saq over the components of urine, nor does urine suppress the sensor’s ability to detect H2Saq. Electrodes can be recovered for repeated use by washing in 1M HCl. Quantitatively, CG voltage shift is fitted by a Langmuir-Freundlich (LF) model, supporting dipole adsorption over an ionic (Nernstian) response mechanism. We find a limit-of-detection of 14.9 nM, 100 times below potability. Full article
(This article belongs to the Section Physical Sensors)
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7 pages, 1320 KiB  
Communication
Exploring the ITO/PET Extended-Gate Field-Effect Transistor (EGFET) for pH Sensing
by Z. Mouffak and V. Adapala
Sensors 2023, 23(20), 8350; https://doi.org/10.3390/s23208350 - 10 Oct 2023
Cited by 1 | Viewed by 2012
Abstract
In this project we investigated the extended-gate field-effect transistor (EGFET) structure used with ITO (Indium Tin Oxide)/PET (Polyethylene Terephthalate) sensitive films acting as the extended-gate part of an EGFET obtained from a combination of FETs from the CD4007 chip. We tested the device [...] Read more.
In this project we investigated the extended-gate field-effect transistor (EGFET) structure used with ITO (Indium Tin Oxide)/PET (Polyethylene Terephthalate) sensitive films acting as the extended-gate part of an EGFET obtained from a combination of FETs from the CD4007 chip. We tested the device as a pH sensor by immersing the ITO/PET electrode in several chemical solutions of acidic and basic nature, including hydrogen peroxide, acetic acid, sulfuric acid, and ammonium hydroxide, at different concentrations. Using a Tektronix 4200A sourcemeter, we plotted the current–voltage (I–V) characteristics for the different chemical solutions, and we established a correlation to the pH changes. Results from the plotted I–V characteristics show a great dependance of the drain current (ID) on solution concentration. Furthermore, we measured the pH of each of the used solutions, and we established a relationship between the drain current and the pH value. Our results show a consistent decrease in the current with an increase in the pH value, although with different rates depending on the solution. The device showed high voltage sensitivity at 0.23 V per pH unit when tested in sulfuric acid. Full article
(This article belongs to the Section Chemical Sensors)
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12 pages, 6972 KiB  
Article
Effect of Microwave Annealing on the Sensing Characteristics of HfO2 Thin Film for High Sensitive pH-EGFET Sensor
by Siwei Cui, Hui Yang, Yifei Zhang, Xing Su and Dongping Wu
Micromachines 2023, 14(10), 1854; https://doi.org/10.3390/mi14101854 - 28 Sep 2023
Cited by 2 | Viewed by 1756
Abstract
Recently, certain challenges have persisted in PH sensor applications, especially when employing hafnium oxide (HfO2) thin films as sensing layers, where issues related to sensitivity, hysteresis, and long-term stability hamper performance. Microwave annealing (MWA) technology, as a promising solution for addressing [...] Read more.
Recently, certain challenges have persisted in PH sensor applications, especially when employing hafnium oxide (HfO2) thin films as sensing layers, where issues related to sensitivity, hysteresis, and long-term stability hamper performance. Microwave annealing (MWA) technology, as a promising solution for addressing these challenges, has gained significant attraction due to its unique advantages. In this article, the effects of microwave annealing (MWA) treatment on the sensing behaviors of Extended-Gate Field-Effect Transistors (EGFETs) utilizing HfO2 as a sensing film have been investigated for the first time. Various power levels of MWA treatment (1750 W/2100 W/2450 W) were selected to explore the optimal processing conditions. A thorough physical analysis was conducted to characterize the surface of the MWA-treated HfO2 sensing thin film using techniques such as X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Our findings reveal that MWA treatment effectively increased the surface sites (Ns) in the HfO2 sensing thin film, consequently leading to an increase in the pH sensitivity of EGFETs to 59.6 mV/pH, as well as a reduction in hysteresis and an enhancement in long-term stability. These results suggest that MWA offers a straightforward, energy-efficient method to enhance overall HfO2 sensing film performance in EGFETs, offering insights for HfO2 applications and broader microelectronics challenges. Full article
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13 pages, 2995 KiB  
Article
Bridged EGFET Design for the Rapid Screening of Sorbents as Sensitisers in Water-Pollution Sensors
by Hadi Rasam AlQahtani, Abdel-Basit M. Al-Odayni, Yusif Alhamed and Martin Grell
Sensors 2023, 23(17), 7554; https://doi.org/10.3390/s23177554 - 31 Aug 2023
Cited by 2 | Viewed by 2244
Abstract
We further simplify the most ‘user-friendly’ potentiometric sensor for waterborne analytes, the ‘extended-gate field effect transistor’ (EGFET). This is accomplished using a ‘bridge’ design, that links two separate water pools, a ‘control gate’ (CG) pool and a ‘floating gate’ (FG) pool, by a [...] Read more.
We further simplify the most ‘user-friendly’ potentiometric sensor for waterborne analytes, the ‘extended-gate field effect transistor’ (EGFET). This is accomplished using a ‘bridge’ design, that links two separate water pools, a ‘control gate’ (CG) pool and a ‘floating gate’ (FG) pool, by a bridge filled with agar-agar hydrogel. We show electric communication between electrodes in the pools across the gel bridge to the gate of an LND150 FET. When loading the gel bridge with a sorbent that is known to act as a sensitiser for Cu2+ water pollution, namely, the ion exchanging zeolite ‘clinoptilolite’, the bridged EGFET acts as a potentiometric sensor to waterborne Cu2+. We then introduce novel sensitisers into the gel bridge, the commercially available resins PurometTM MTS9140 and MTS9200, which are sorbents for the extraction of mercury (Hg2+) pollution from water. We find a response of the bridged EGFET to Hg2+ water pollution, setting a template for the rapid screening of ion exchange resins that are readily available for a wide range of harmful (or precious) metal ions. We fit the potentiometric sensor response vs. pollutant concentration characteristics to the Langmuir–Freundlich (LF) model which is discussed in context with other ion-sensor characteristics. Full article
(This article belongs to the Section Environmental Sensing)
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