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Search Results (3)

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Keywords = APMOCVD

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15 pages, 2855 KB  
Article
Mosaic Structure of GaN Film Grown on Sapphire Substrate by AP-MOCVD: Impact of Thermal Annealing on the Tilt and Twist Angles
by J. Laifi, M. F. Hasaneen, H. Bouazizi, Fatimah Hafiz Alsahli, T. A. Lafford and A. Bchetnia
Crystals 2025, 15(1), 97; https://doi.org/10.3390/cryst15010097 - 20 Jan 2025
Cited by 4 | Viewed by 3350
Abstract
A GaN layer with a thickness of 2 µm was grown on a sapphire substrate using atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD). Subsequently, the layer was annealed under a nitrogen atmosphere at temperatures ranging from 1000 °C to 1120 °C. High-resolution X-ray [...] Read more.
A GaN layer with a thickness of 2 µm was grown on a sapphire substrate using atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD). Subsequently, the layer was annealed under a nitrogen atmosphere at temperatures ranging from 1000 °C to 1120 °C. High-resolution X-ray diffraction (HRXRD) analysis reveals the impact of thermal annealing on the mosaic structure of the GaN, specifically the tilt and twist variations in four planes: (00.2), (10.3), (10.2), and (10.1). Interestingly, the observed trends suggest a differential effect of annealing on screw and edge dislocation densities. The annealing process reduces the edge and screw dislocation density. Lower values (Dscrew = 1.2 × 108 cm−2; Dedge = 1.6 × 109 cm−2) were obtained for the sample annealed at 1050 °C. Notably, both tilt and twist angles exhibited a minimum at 1050 °C (tilt = 252 arcsecs, and twist = 558 arcsecs), indicating improved crystal quality at this specific temperature. Photoluminescence (PL) spectroscopy further complemented the structural analysis. The intensity and broadening of the yellow band (YL) in the PL spectra progressively increased with the increasing annealing temperature, suggesting the presence of additional defect states. The near band edge PL emission (3.35 and 3.41 eV) variation upon thermal annealing was correlated with the mosaic structure evolution. Full article
(This article belongs to the Special Issue New Trends in Magnetic, Dielectric, Electrical, Optical, and Thermal Properties of Crystalline Materials)
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11 pages, 5769 KB  
Article
The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth
by Yu-Pin Lan
Coatings 2021, 11(7), 824; https://doi.org/10.3390/coatings11070824 - 8 Jul 2021
Cited by 5 | Viewed by 3041
Abstract
In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor deposition method. The results show [...] Read more.
In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor deposition method. The results show that high-temperature preheating (>500 °C) can modify the surface morphology of the substrate so that the crystalline quality of the grown GaN layer can be improved. With higher preheated temperatures, the grown GaN layer reveals smaller FWHM (full width at half-maximum) of the X-ray rocking curve. In addition, we find that the photoluminescence spectra of the GaN layers reveal their narrowest linewidth at a preheated temperature of 800 °C. These results support improvements of crystalline quality and provide optimization of a c-GaN grown epitaxially on the preheated (−2 0 1) β-Ga2O3 substrates for further device fabrication. Full article
(This article belongs to the Section Thin Films)
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14 pages, 21007 KB  
Article
Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD
by Ivan Shtepliuk, Volodymyr Khranovskyy, Arsenii Ievtushenko and Rositsa Yakimova
Materials 2021, 14(4), 1035; https://doi.org/10.3390/ma14041035 - 22 Feb 2021
Cited by 8 | Viewed by 3637
Abstract
The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles [...] Read more.
The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics. Full article
(This article belongs to the Special Issue Progress in Optical Characterization of Semiconductor Nanomaterials and Devices)
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