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Open AccessArticle

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

1
Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
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Department of Physics and Technology of Photoelectronic and Magnetoactive Materials, I. Frantsevich Institute for Problems of Material Science, NASU, 3 Krzhizhanovskogo str., 03142 Kyiv, Ukraine
*
Author to whom correspondence should be addressed.
Academic Editor: Nabiha Ben Sedrine
Materials 2021, 14(4), 1035; https://doi.org/10.3390/ma14041035
Received: 28 January 2021 / Revised: 16 February 2021 / Accepted: 18 February 2021 / Published: 22 February 2021
The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics. View Full-Text
Keywords: ZnO; SiC; off-cut angle; luminescence; APMOCVD ZnO; SiC; off-cut angle; luminescence; APMOCVD
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MDPI and ACS Style

Shtepliuk, I.; Khranovskyy, V.; Ievtushenko, A.; Yakimova, R. Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD. Materials 2021, 14, 1035. https://doi.org/10.3390/ma14041035

AMA Style

Shtepliuk I, Khranovskyy V, Ievtushenko A, Yakimova R. Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD. Materials. 2021; 14(4):1035. https://doi.org/10.3390/ma14041035

Chicago/Turabian Style

Shtepliuk, Ivan; Khranovskyy, Volodymyr; Ievtushenko, Arsenii; Yakimova, Rositsa. 2021. "Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD" Materials 14, no. 4: 1035. https://doi.org/10.3390/ma14041035

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