Advances in Ferroelectric HfO2 Thin Films

Dear Colleagues,

Since the first report of unexpected ferroelectricity in Si-doped hafnium oxide (HfO2) thin films, the topic of hafnium oxide-based ferroelectric materials has attracted a great deal of interest in fundamental physics and device applications. Owing to their advantages of overcoming the technical bottlenecks of perovskite-structured ferroelectrics suffering from, for instance, the high compatibility of integrating with CMOS processes and superior scalability of only a few nanometers, ferroelectric fluorite-structure hafnium oxides are believed to bring opportunities in terms of material revolution for the future development of high density logic and memory devices, including ferroelectric random-access memories (FeRAMs), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (Fe-TJs). A tremendous amount of research has been carried out in the last 10 years to fully understand the origin of the ferroelectric phase and further control microstructure and ferroelectric properties in hafnium oxide. In this Special Issue titled “Advances in Ferroelectric HfO2 Thin Films”, authors are highly encouraged to submit manuscripts on the topics of interest, including but not limited to the growth of ferroelectric HfO2 films, doped and undoped HfO2, microscopic origin of ferroelectricity, structure-property characterization, and related device applications of ferroelectric HfO2. The aim of this Special Issue is to cover the recent progress and future perspectives in the field of ferroelectric hafnium oxide thin films, including theoretical, experimental, and related memory devices and concepts.

Dr. Jike Lyu
Prof. Dr. Danyang Wang
Guest Editors

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• hafnium oxides
• ferroelectric thin films
• fabrication techniques
• ferroelectric phase and nanostructures
• physical and chemical properties
• epitaxial oxides
• non-volatile memory devices
• die-, piezo-, and pyroelectricity
• ferroelectric reliability