Advances in Ultra-Wide Bandgap Semiconductors and Their Applications
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".
Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 236
Special Issue Editor
Special Issue Information
Dear Colleagues,
Ultra-Wide Bandgap Semiconductors (UWBGS) refer to materials with bandgaps higher than gallium nitride (GaN), which is 3.4 eV. These materials include aluminum gallium nitride (AlGaN), gallium oxide (Ga2O3), diamond, and hexagonal and cubic boron nitride (h- and c-BN). Larger bandgaps open new areas of application due to higher figures-of-merit than their narrow band gap counterparts. Interest in UWBS has not diminished over time; as one material system reaches maturity, another emerges as its competitor; as AlGaN has developed considerably, Ga2O3 has started to show promise. Similarly, h-BN, a two-dimensional material (2D), can be applied to aid other material systems, and c-BN has the largest bandgap of any known semiconductor. Every member of the UWBGS family has issues to be resolved, leading to opportunities for innovators and researchers. The applications of UWBGS are even more exciting that include numerous types of field-effect transistors (FETs), deep ultraviolet light-emitting diodes (DUVLED), solar blind detectors, and high-power and radio frequency (RF) electronics, to name a few. Due to these reasons, the interest in UWBGS material research leads to new applications.
This Issue aims to consolidate research on Ultra-Wide Bandgap Semiconductor materials and their applications in one place where researchers can explore the published research work so that they can contribute further to this field.
Dr. Iftikhar Ahmad
Guest Editor
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Keywords
- aluminum nitride (AlN)
- aluminum Gallium nitride (AlGaN)
- gallium oxide (Ga2O3)
- aluminum gallium indium oxide [(AlGaIn)2O3]
- hexagonal boron nitride (h-BN)
- cubic aluminum boron nitride (c-AlBN)
- cubic boron nitride (c-BN)
- field effect transistor (FETs)
- heterojunction field effect transistor (HFTEs)
- metal insulator field effect transistor (MIFET)
- metal oxide field effect transistor (MOSFET)
- solar blind detectors
- deep ultraviolet light emitting diodes (DUVLEDs)
- two-dimensional electron gas (2DEG)
- modulation doping
- surface acoustic-wave devices
- quantum information
- extreme/harsh environment sensors
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