Semicond. Heterog. Integr., Volume 1, Issue 1 (June 2026) – 4 articles

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11 pages, 499 KB  
Article
Orbital Selectivity from Orbital Ordering in a van Hove Singularity Hubbard Model
by Luis Craco
Semicond. Heterog. Integr. 2026, 1(1), 4; https://doi.org/10.3390/shi1010004 - 22 May 2026
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Abstract
We explore the electronic state of a van Hove singularity two-orbital model, showing the emergence of orbital selectivity arising from ferro-orbital ordering (FOO). Our microscopic description highlights the role of orbital degrees of freedom in realizing orbital selectivity with coexistent quasiparticle resonances and [...] Read more.
We explore the electronic state of a van Hove singularity two-orbital model, showing the emergence of orbital selectivity arising from ferro-orbital ordering (FOO). Our microscopic description highlights the role of orbital degrees of freedom in realizing orbital selectivity with coexistent quasiparticle resonances and Mott-localized electronic states. This allows us to identify the emergent paramagnetic electronic state that gives rise to spontaneous formation of altermagnetism from electron interactions and orbital ordering. We also show why our DMFT results might be important for understanding the implications of FOO for memristors for future neuromorphics. Full article
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13 pages, 885 KB  
Article
Mo-4d Orbital Selectivity Induced by Disorder and Substrate–Film Interaction in Monolayer MoS2
by Luis Craco
Semicond. Heterog. Integr. 2026, 1(1), 3; https://doi.org/10.3390/shi1010003 - 21 Apr 2026
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Abstract
Based on DFT+DMFT calculations, we explore the interplay between electron correlations, lattice disorder and substrate–film interaction on the Mo-4d spectra MoS2 monolayer. We show that MoS2 serves as an ideal testing ground for the exploration of weakly correlated phenomena [...] Read more.
Based on DFT+DMFT calculations, we explore the interplay between electron correlations, lattice disorder and substrate–film interaction on the Mo-4d spectra MoS2 monolayer. We show that MoS2 serves as an ideal testing ground for the exploration of weakly correlated phenomena with tunable semiconducting-to-metal phase transitions. We also show why our orbital-selective results in the dirty limit are important to understanding the emergence of substrate-induced localized in-gap states and the implication of it for future memristors for memory-based neuromorphic computing. Full article
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16 pages, 2558 KB  
Perspective
In-SoIC ESD Protection for Chiplet-Based 3D Microsystems: Future Research Directions
by Xunyu Li, Runyu Miao, Zijian Yue and Albert Wang
Semicond. Heterog. Integr. 2026, 1(1), 2; https://doi.org/10.3390/shi1010002 - 23 Mar 2026
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Abstract
Heterogeneous integration opens a pathway to three-dimensional chiplet-based microsystem chips. Electrostatic discharge reliability is a major challenge to future smart chips featuring rich functionalities and ultra performance, utilizing advanced heterogeneous integration and packaging technologies. This paper discusses emerging challenges and future research directions [...] Read more.
Heterogeneous integration opens a pathway to three-dimensional chiplet-based microsystem chips. Electrostatic discharge reliability is a major challenge to future smart chips featuring rich functionalities and ultra performance, utilizing advanced heterogeneous integration and packaging technologies. This paper discusses emerging challenges and future research directions in developing robust electrostatic discharge protection solutions for future systems-on-integrated-chiplets. Full article
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2 pages, 257 KB  
Editorial
Launching the Semiconductors and Heterogeneous Integration Journal
by Hei Wong
Semicond. Heterog. Integr. 2026, 1(1), 1; https://doi.org/10.3390/shi1010001 - 5 Nov 2025
Cited by 1 | Viewed by 1357
Abstract
The semiconductor industry stands at a transformative crossroads [...] Full article
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