Semiconductors and Heterogeneous Integration doi: 10.3390/shi1010003

Authors: Luis Craco

Based on DFT+DMFT calculations, we explore the interplay between electron correlations, lattice disorder and substrate–film interaction on the Mo-4d spectra MoS2 monolayer. We show that MoS2 serves as an ideal testing ground for the exploration of weakly correlated phenomena with tunable semiconducting-to-metal phase transitions. We also show why our orbital-selective results in the dirty limit are important to understanding the emergence of substrate-induced localized in-gap states and the implication of it for future memristors for memory-based neuromorphic computing.

Semiconductors and Heterogeneous Integration doi: 10.3390/shi1010002

Authors: Xunyu Li Runyu Miao Zijian Yue Albert Wang

Heterogeneous integration opens a pathway to three-dimensional chiplet-based microsystem chips. Electrostatic discharge reliability is a major challenge to future smart chips featuring rich functionalities and ultra performance, utilizing advanced heterogeneous integration and packaging technologies. This paper discusses emerging challenges and future research directions in developing robust electrostatic discharge protection solutions for future systems-on-integrated-chiplets.

Semiconductors and Heterogeneous Integration doi: 10.3390/shi1010001

Authors: Hei Wong

The semiconductor industry stands at a transformative crossroads [...]