Chen, H.-C.; Chen, K.-H.; Hung, G.-J.; Kao, M.-C.; Wang, Y.-C.; Kao, C.-C.H.; Lin, S.-F.
Schottky Energy Barrier Characteristics of Gadolinium Oxide Thin-Film Resistive Memory Devices with Low-Temperature Supercritical Fluid Technology. Eng. Proc. 2026, 129, 13.
https://doi.org/10.3390/engproc2026129013
AMA Style
Chen H-C, Chen K-H, Hung G-J, Kao M-C, Wang Y-C, Kao C-CH, Lin S-F.
Schottky Energy Barrier Characteristics of Gadolinium Oxide Thin-Film Resistive Memory Devices with Low-Temperature Supercritical Fluid Technology. Engineering Proceedings. 2026; 129(1):13.
https://doi.org/10.3390/engproc2026129013
Chicago/Turabian Style
Chen, Hsin-Chin, Kai-Huang Chen, Guo-Jau Hung, Ming-Cheng Kao, Yao-Chin Wang, Chin-Chueh Huang Kao, and Shen-Feng Lin.
2026. "Schottky Energy Barrier Characteristics of Gadolinium Oxide Thin-Film Resistive Memory Devices with Low-Temperature Supercritical Fluid Technology" Engineering Proceedings 129, no. 1: 13.
https://doi.org/10.3390/engproc2026129013
APA Style
Chen, H.-C., Chen, K.-H., Hung, G.-J., Kao, M.-C., Wang, Y.-C., Kao, C.-C. H., & Lin, S.-F.
(2026). Schottky Energy Barrier Characteristics of Gadolinium Oxide Thin-Film Resistive Memory Devices with Low-Temperature Supercritical Fluid Technology. Engineering Proceedings, 129(1), 13.
https://doi.org/10.3390/engproc2026129013
