Cioni, M.; Giorgino, G.; Chini, A.; Parisi, A.; Cappellini, G.; Miccoli, C.; Castagna, M.E.; Tringali, C.; Iucolano, F.
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs. Electron. Mater. 2024, 5, 132-144.
https://doi.org/10.3390/electronicmat5030009
AMA Style
Cioni M, Giorgino G, Chini A, Parisi A, Cappellini G, Miccoli C, Castagna ME, Tringali C, Iucolano F.
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs. Electronic Materials. 2024; 5(3):132-144.
https://doi.org/10.3390/electronicmat5030009
Chicago/Turabian Style
Cioni, Marcello, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Giacomo Cappellini, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, and Ferdinando Iucolano.
2024. "Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs" Electronic Materials 5, no. 3: 132-144.
https://doi.org/10.3390/electronicmat5030009
APA Style
Cioni, M., Giorgino, G., Chini, A., Parisi, A., Cappellini, G., Miccoli, C., Castagna, M. E., Tringali, C., & Iucolano, F.
(2024). Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs. Electronic Materials, 5(3), 132-144.
https://doi.org/10.3390/electronicmat5030009
