Vashishtha, P.; Prajapat, P.; Goswami, L.; Yadav, A.; Pandey, A.; Gupta, G.
Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector. Electron. Mater. 2022, 3, 357-367.
https://doi.org/10.3390/electronicmat3040029
AMA Style
Vashishtha P, Prajapat P, Goswami L, Yadav A, Pandey A, Gupta G.
Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector. Electronic Materials. 2022; 3(4):357-367.
https://doi.org/10.3390/electronicmat3040029
Chicago/Turabian Style
Vashishtha, Pargam, Pukhraj Prajapat, Lalit Goswami, Aditya Yadav, Akhilesh Pandey, and Govind Gupta.
2022. "Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector" Electronic Materials 3, no. 4: 357-367.
https://doi.org/10.3390/electronicmat3040029
APA Style
Vashishtha, P., Prajapat, P., Goswami, L., Yadav, A., Pandey, A., & Gupta, G.
(2022). Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector. Electronic Materials, 3(4), 357-367.
https://doi.org/10.3390/electronicmat3040029