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Article

Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells

by
Juanita Saroj James
1,*,
Hiromi Fujita
2,
Peter J. Carrington
3,
Andrew R. J. Marshall
4,
Susan Krier
4 and
Anthony Krier
4
1
Department of Physics, Women’s Christian College, Chennai 600006, India
2
Asahi Kasei Corporation, 2-1 Samejima, Fuji-city 416-8501, Shizuoka, Japan
3
School of Engineering, Lancaster University, Lancaster LA1 4YW, UK
4
Department of Physics, Lancaster University, Lancaster LA1 4YB, UK
*
Author to whom correspondence should be addressed.
Physics 2024, 6(3), 990-998; https://doi.org/10.3390/physics6030060
Submission received: 28 February 2024 / Revised: 19 June 2024 / Accepted: 25 June 2024 / Published: 19 July 2024
(This article belongs to the Section Applied Physics)
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Abstract

An approach to derive the below-bandgap absorption in GaSb/GaAs self-assembled quantum dot devices using room-temperature external quantum efficiency measurement results is presented. Devices with five layers of delta-doped quantum dots placed in the intrinsic, n- and p-regions of a GaAs solar cell are studied. The importance of incorporating an extended Urbach tail absorption in analyzing the absorption strength of quantum dots and the transition states is demonstrated. The theoretically integrated absorbance via quantum dot ground states is calculated as 1.04 × 1015 cm−1s−1, which is in reasonable agreement with the experimentally derived value 8.1 × 1015 cm−1s−1. The wetting layer and quantum dot absorption contributions are separated from the tail absorption and their transition energies are calculated. Using these transition energies and the GaAs energy gap of 1.42 eV, the heavy hole confinement energies for the quantum dots (320 meV) and for the wetting layer (120 meV) are estimated.
Keywords: solar cells; quantum dots; molecular beam epitaxy; gallium antimonide; photocurrent; delta doping; photoresponse; Urbach tail; below-bandgap absorption solar cells; quantum dots; molecular beam epitaxy; gallium antimonide; photocurrent; delta doping; photoresponse; Urbach tail; below-bandgap absorption

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MDPI and ACS Style

James, J.S.; Fujita, H.; Carrington, P.J.; Marshall, A.R.J.; Krier, S.; Krier, A. Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells. Physics 2024, 6, 990-998. https://doi.org/10.3390/physics6030060

AMA Style

James JS, Fujita H, Carrington PJ, Marshall ARJ, Krier S, Krier A. Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells. Physics. 2024; 6(3):990-998. https://doi.org/10.3390/physics6030060

Chicago/Turabian Style

James, Juanita Saroj, Hiromi Fujita, Peter J. Carrington, Andrew R. J. Marshall, Susan Krier, and Anthony Krier. 2024. "Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells" Physics 6, no. 3: 990-998. https://doi.org/10.3390/physics6030060

APA Style

James, J. S., Fujita, H., Carrington, P. J., Marshall, A. R. J., Krier, S., & Krier, A. (2024). Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells. Physics, 6(3), 990-998. https://doi.org/10.3390/physics6030060

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