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Energy Response of Silicon Drift Detectors for Kaonic Atom Precision Measurements

Istituto Nazionale di Fisica Nucleare–Laboratori Nazionali di Frascati (LNF-INFN), 00044 Frascati RM, Italy
Department of Physics, Faculty of Science MM.FF.NN., University of Rome 2 (Tor Vergata), 00133 Rome, Italy
Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria and INFN Sezione di Milano, 20133 Milano, Italy
Horia Hulubei National Institute of Physics and Nuclear Engineering (IFIN-HH), 77125 Magurele, Romania
Stefan-Meyer-Institut für Subatomare Physik, 1090 Vienna, Austria
Author to whom correspondence should be addressed.
Condens. Matter 2019, 4(1), 31;
Received: 29 January 2019 / Revised: 1 March 2019 / Accepted: 6 March 2019 / Published: 11 March 2019
(This article belongs to the Special Issue High Precision X-Ray Measurements)
Novel, large-area silicon drift detectors (SDDs) have been developed to perform precision measurements of kaonic atom X-ray spectroscopy, for the study the K ¯ N strong interaction in the low-energy regime. These devices have special geometries, field configurations and read-out electronics, resulting in excellent performances in terms of linearity, stability and energy resolution. In this work the SDDs energy response in the energy region between 4000 eV and 12,000 eV is reported, revealing a stable linear response within 1 eV and good energy resolution. View Full-Text
Keywords: solid-state detectors; radiation detectors; photodetectors solid-state detectors; radiation detectors; photodetectors
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MDPI and ACS Style

Miliucci, M.; Iliescu, M.; Amirkhani, A.; Bazzi, M.; Curceanu, C.; Fiorini, C.; Scordo, A.; Sirghi, F.; Zmeskal, J. Energy Response of Silicon Drift Detectors for Kaonic Atom Precision Measurements. Condens. Matter 2019, 4, 31.

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