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Magnetochemistry
Volume 11
Issue 5
10.3390/magnetochemistry11050039
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Article

Rhenium-Induced Negative Magnetoresistance in Monolayer Graphene

by
Ying Zhang
1,2,*,
Jiali You
1,
Weiwei Li
1,
Zijie Huang
1,
Yuxiang Feng
1,
Yuyu Liu
1 and
Jing Li
3,*
1
School of Electronic Engineering, Huainan Normal University, Dongshan West Road, Huainan 232038, China
2
Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
3
Engineering Research Center of High-Frequency Soft Magnetic Materials and Ceramic Powder Materials of Anhui Province, Engineering Technology Research Center of Preparation and Application of Industrial Ceramics of Anhui Province, School of Chemistry and Material Engineering, Chaohu University, 1 Bantang Road, Hefei 238000, China
*
Authors to whom correspondence should be addressed.
Magnetochemistry 2025, 11(5), 39; https://doi.org/10.3390/magnetochemistry11050039
Submission received: 15 March 2025 / Revised: 18 April 2025 / Accepted: 22 April 2025 / Published: 6 May 2025
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Abstract

The impact of rhenium doping on the transport properties and electron localization in monolayer graphene was experimentally investigated. In this study, we report the emergence of unsaturated negative magnetoresistance in Re-doped graphene devices, which is observed exclusively at low temperatures. Moreover, angle-dependent measurements reveal a pronounced anisotropy in the negative magnetoresistance. This phenomenon is attributed to the disorder and localized magnetic moments introduced by Re doping, which lead to charge carrier localization and are accompanied by substantial magnetocrystalline anisotropy energy.
Keywords: electron localization; Re-doped graphene; negative magnetoresistance; transport properties electron localization; Re-doped graphene; negative magnetoresistance; transport properties

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MDPI and ACS Style

Zhang, Y.; You, J.; Li, W.; Huang, Z.; Feng, Y.; Liu, Y.; Li, J. Rhenium-Induced Negative Magnetoresistance in Monolayer Graphene. Magnetochemistry 2025, 11, 39. https://doi.org/10.3390/magnetochemistry11050039

AMA Style

Zhang Y, You J, Li W, Huang Z, Feng Y, Liu Y, Li J. Rhenium-Induced Negative Magnetoresistance in Monolayer Graphene. Magnetochemistry. 2025; 11(5):39. https://doi.org/10.3390/magnetochemistry11050039

Chicago/Turabian Style

Zhang, Ying, Jiali You, Weiwei Li, Zijie Huang, Yuxiang Feng, Yuyu Liu, and Jing Li. 2025. "Rhenium-Induced Negative Magnetoresistance in Monolayer Graphene" Magnetochemistry 11, no. 5: 39. https://doi.org/10.3390/magnetochemistry11050039

APA Style

Zhang, Y., You, J., Li, W., Huang, Z., Feng, Y., Liu, Y., & Li, J. (2025). Rhenium-Induced Negative Magnetoresistance in Monolayer Graphene. Magnetochemistry, 11(5), 39. https://doi.org/10.3390/magnetochemistry11050039

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