The Effect of Cu and Ga Doped ZnIn2S4 under Visible Light on the High Generation of H2 Production
1
Global Environment Center for Education & Research, Mie University, Mie 514-8507, Japan
2
Department of Chemistry for Materials, Graduate School of Engineering, Mie University, Mie 514-8507, Japan
*
Author to whom correspondence should be addressed.
ChemEngineering 2019, 3(4), 79; https://doi.org/10.3390/chemengineering3040079
Received: 28 June 2019 / Revised: 13 September 2019 / Accepted: 25 September 2019 / Published: 29 September 2019
(This article belongs to the Special Issue Advances in Metal-Based Catalysts)
A Cu+ and Ga3+ co-doped ZnIn2S4 photocatalyst (Zn(1−2x)(CuGa)xIn2S4) with controlled band gap was prepared via a simple one-step solvothermal method. Zn(1−2x)(CuGa)xIn2S4 acted as an efficient photocatalyst for H2 evolution under visible light irradiation (λ > 420 nm; 4500 µW/cm2). The effects of the (Cu and Ga)/Zn molar ratios of Zn(1−2x)(CuGa)xIn2S4 on the crystal structure (hexagonal structure), morphology (microsphere-like flower), optical property (light harvesting activity and charge hole separation ability), and photocatalytic activity have been investigated in detail. The maximum H2 evolution rate (1650 µmol·h−1·g−1) was achieved over Zn0.84(CuGa)0.13In2S4, showing a 3.3 times higher rate than that of untreated ZnIn2S4. The bandgap energy of Zn(1−2x)(CuGa)xIn2S4 decreased from 2.67 to 1.90 eV as the amount of doping Cu+ and Ga3+ increased.
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Keywords:
photocatalytic hydrogen generation; copper; gallium; ZnIn2S4
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MDPI and ACS Style
Tateishi, I.; Furukawa, M.; Katsumata, H.; Kaneco, S. The Effect of Cu and Ga Doped ZnIn2S4 under Visible Light on the High Generation of H2 Production. ChemEngineering 2019, 3, 79.
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