Magnesium Incorporation in n-CdTe to Produce Wide Bandgap p-Type CdTe:Mg Window Layers
AbstractIn order to develop wide bandgap p-type window materials to use in graded bandgap devices, the effects of magnesium (Mg) in n-CdTe layers were explored. In this work, magnesium-incorporated cadmium telluride (CdTe:Mg) layers were electroplated using two-electrode method. The layers were deposited on glass/FTO (flourine doped tin oxide) substrates, using an aqueous solution containing Cd2+, Mg2+ and tellurium dioxide (TeO2) as the precursors. X-ray diffraction (XRD) studies indicate the reduction of crystallinity as the Mg concentration is increased in parts per million (ppm) level. Material becomes a completely amorphous layer at high Mg concentrations in the electrolytic bath. Photoelectrochemical (PEC) measurements show the gradual reduction of n-CdTe turning into p-CdTe layers when Mg concentration is increased in the electrolyte. Optical absorption measurements show the expansion of energy bandgap from CdTe bandgap (~1.48 eV) up to ~2.85 eV. The other characterisation results (energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL)) are also explored and presented together with above experimental results. View Full-Text
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Alam, A.E.; Ojo, A.A.; Jasinski, J.B.; Dharmadasa, I.M. Magnesium Incorporation in n-CdTe to Produce Wide Bandgap p-Type CdTe:Mg Window Layers. ChemEngineering 2018, 2, 59.
Alam AE, Ojo AA, Jasinski JB, Dharmadasa IM. Magnesium Incorporation in n-CdTe to Produce Wide Bandgap p-Type CdTe:Mg Window Layers. ChemEngineering. 2018; 2(4):59.Chicago/Turabian Style
Alam, Ashfaque E.; Ojo, Ayotunde A.; Jasinski, Jacek B.; Dharmadasa, Imyhamy M. 2018. "Magnesium Incorporation in n-CdTe to Produce Wide Bandgap p-Type CdTe:Mg Window Layers." ChemEngineering 2, no. 4: 59.
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