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Magnesium Incorporation in n-CdTe to Produce Wide Bandgap p-Type CdTe:Mg Window Layers

Materials and Engineering Research Institute (MERI), Sheffield Hallam University, Sheffield S1 1WB, UK
Conn Center for Renewable Energy Research, University of Louisville, Louisville, KY 40292, USA
Author to whom correspondence should be addressed.
ChemEngineering 2018, 2(4), 59;
Received: 18 October 2018 / Revised: 28 November 2018 / Accepted: 30 November 2018 / Published: 6 December 2018
(This article belongs to the Special Issue Functional Materials for Renewable Energy Technologies)
PDF [24466 KB, uploaded 6 December 2018]


In order to develop wide bandgap p-type window materials to use in graded bandgap devices, the effects of magnesium (Mg) in n-CdTe layers were explored. In this work, magnesium-incorporated cadmium telluride (CdTe:Mg) layers were electroplated using two-electrode method. The layers were deposited on glass/FTO (flourine doped tin oxide) substrates, using an aqueous solution containing Cd2+, Mg2+ and tellurium dioxide (TeO2) as the precursors. X-ray diffraction (XRD) studies indicate the reduction of crystallinity as the Mg concentration is increased in parts per million (ppm) level. Material becomes a completely amorphous layer at high Mg concentrations in the electrolytic bath. Photoelectrochemical (PEC) measurements show the gradual reduction of n-CdTe turning into p-CdTe layers when Mg concentration is increased in the electrolyte. Optical absorption measurements show the expansion of energy bandgap from CdTe bandgap (~1.48 eV) up to ~2.85 eV. The other characterisation results (energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL)) are also explored and presented together with above experimental results. View Full-Text
Keywords: n-CdTe; Mg doping of CdTe; p-CdTe; Wide bandgap window materials n-CdTe; Mg doping of CdTe; p-CdTe; Wide bandgap window materials

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Alam, A.E.; Ojo, A.A.; Jasinski, J.B.; Dharmadasa, I.M. Magnesium Incorporation in n-CdTe to Produce Wide Bandgap p-Type CdTe:Mg Window Layers. ChemEngineering 2018, 2, 59.

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