Zhang, H.; Feng, B.; Xiong, T.; Li, W.; Tang, T.; Ruan, R.; Jin, P.; Zhou, G.; Zhang, Y.; Wang, K.;
et al. Bismuth-Doped Indium Oxide as a Promising Thermoelectric Material. Inorganics 2025, 13, 277.
https://doi.org/10.3390/inorganics13090277
AMA Style
Zhang H, Feng B, Xiong T, Li W, Tang T, Ruan R, Jin P, Zhou G, Zhang Y, Wang K,
et al. Bismuth-Doped Indium Oxide as a Promising Thermoelectric Material. Inorganics. 2025; 13(9):277.
https://doi.org/10.3390/inorganics13090277
Chicago/Turabian Style
Zhang, Haitao, Bo Feng, Tongqiang Xiong, Wenzheng Li, Tong Tang, Ruolin Ruan, Peng Jin, Guopeng Zhou, Yang Zhang, Kewei Wang,
and et al. 2025. "Bismuth-Doped Indium Oxide as a Promising Thermoelectric Material" Inorganics 13, no. 9: 277.
https://doi.org/10.3390/inorganics13090277
APA Style
Zhang, H., Feng, B., Xiong, T., Li, W., Tang, T., Ruan, R., Jin, P., Zhou, G., Zhang, Y., Wang, K., Zhong, Y., Chen, Y., & Zuo, X.
(2025). Bismuth-Doped Indium Oxide as a Promising Thermoelectric Material. Inorganics, 13(9), 277.
https://doi.org/10.3390/inorganics13090277