Yan, Y.; Huang, J.; Pan, L.; Meng, B.; Wei, Q.; Yang, B.
Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates. Inorganics 2024, 12, 207.
https://doi.org/10.3390/inorganics12080207
AMA Style
Yan Y, Huang J, Pan L, Meng B, Wei Q, Yang B.
Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates. Inorganics. 2024; 12(8):207.
https://doi.org/10.3390/inorganics12080207
Chicago/Turabian Style
Yan, Yujie, Jun Huang, Lei Pan, Biao Meng, Qiangmin Wei, and Bing Yang.
2024. "Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates" Inorganics 12, no. 8: 207.
https://doi.org/10.3390/inorganics12080207
APA Style
Yan, Y., Huang, J., Pan, L., Meng, B., Wei, Q., & Yang, B.
(2024). Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates. Inorganics, 12(8), 207.
https://doi.org/10.3390/inorganics12080207