Simulations and Experiments on Activation of Doped Silicon Wafers Based on Dual Beam of 785 nm Semiconductor Laser and 10.6 μm CO2 Laser

Wang, Ziming; Li, Sicheng; Liu, Mingkun; Wang, Guochang; Xie, Zhenzhen; Hu, Liemao; Li, Hui; Ning, Fangjin; Xu, Wenning; Hou, Yishen; Liu, Jie; Wang, Lianqing; Wang, Donglei; Ke, Changjun; Li, Zhiyong; Tan, Rongqing

doi:10.3390/photonics13030232

Open AccessArticle

Simulations and Experiments on Activation of Doped Silicon Wafers Based on Dual Beam of 785 nm Semiconductor Laser and 10.6 μm CO₂ Laser

by

Ziming Wang

^1,2,

Sicheng Li

^1,2,

Mingkun Liu

^1,2

,

Guochang Wang

^1,2,

Zhenzhen Xie

^1,2,

Liemao Hu

¹,

Hui Li

¹,

Fangjin Ning

¹,

Wenning Xu

^1,2

,

Yishen Hou

^1,2,

Jie Liu

^1,2,

Lianqing Wang

^3,4,*,

Donglei Wang

^1,2,

Changjun Ke

^1,2,

Zhiyong Li

^1,2,* and

Rongqing Tan

^1,2

¹

Laser Engineering Center, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China

²

School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China

³

College of Intelligent Science, National University of Defense Technology, Changsha 410073, China

⁴

Command and Control Support Department, Engineering University of the Information Support Force, Wuhan 430030, China

^*

Authors to whom correspondence should be addressed.

Photonics 2026, 13(3), 232; https://doi.org/10.3390/photonics13030232

Submission received: 30 December 2025 / Revised: 13 February 2026 / Accepted: 24 February 2026 / Published: 27 February 2026

(This article belongs to the Special Issue Long-Wave Infrared Lasers and Applications)

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Abstract

In this study, we analyzed the spatiotemporal distribution of annealing temperature using a dual-beam dynamic scanning annealing technique based on a CO₂ laser (10.6 μm) and a 785 nm laser, and the effects of laser energy density, scanning speed, and preheating temperature on the resulting temperature. We systematically examined the influence of key process parameters, including laser energy density, scanning speed, and preheating temperature, on the annealing temperature. Our aim was to optimize annealing conditions to enhance the electrical properties of the materials, as indicated by reduced sheet resistance, controlled diffusion depth of doped ions, and higher activation rates. This approach ensured high activation rates of doped ions while limiting dopant re-diffusion to merely 3.6 nm in the depth direction, as confirmed by concentration profile analysis. Furthermore, based on temperature distribution, deformation of the wafer surface was analyzed. The results indicate that under the employed process parameters, no significant adverse effects on wafer flatness or structural integrity were observed.

Keywords: laser annealing; CO₂ laser; temperature distribution; electrical performance; structural characteristics

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MDPI and ACS Style

Wang, Z.; Li, S.; Liu, M.; Wang, G.; Xie, Z.; Hu, L.; Li, H.; Ning, F.; Xu, W.; Hou, Y.; et al. Simulations and Experiments on Activation of Doped Silicon Wafers Based on Dual Beam of 785 nm Semiconductor Laser and 10.6 μm CO₂ Laser. Photonics 2026, 13, 232. https://doi.org/10.3390/photonics13030232

AMA Style

Wang Z, Li S, Liu M, Wang G, Xie Z, Hu L, Li H, Ning F, Xu W, Hou Y, et al. Simulations and Experiments on Activation of Doped Silicon Wafers Based on Dual Beam of 785 nm Semiconductor Laser and 10.6 μm CO₂ Laser. Photonics. 2026; 13(3):232. https://doi.org/10.3390/photonics13030232

Chicago/Turabian Style

Wang, Ziming, Sicheng Li, Mingkun Liu, Guochang Wang, Zhenzhen Xie, Liemao Hu, Hui Li, Fangjin Ning, Wenning Xu, Yishen Hou, and et al. 2026. "Simulations and Experiments on Activation of Doped Silicon Wafers Based on Dual Beam of 785 nm Semiconductor Laser and 10.6 μm CO₂ Laser" Photonics 13, no. 3: 232. https://doi.org/10.3390/photonics13030232

APA Style

Wang, Z., Li, S., Liu, M., Wang, G., Xie, Z., Hu, L., Li, H., Ning, F., Xu, W., Hou, Y., Liu, J., Wang, L., Wang, D., Ke, C., Li, Z., & Tan, R. (2026). Simulations and Experiments on Activation of Doped Silicon Wafers Based on Dual Beam of 785 nm Semiconductor Laser and 10.6 μm CO₂ Laser. Photonics, 13(3), 232. https://doi.org/10.3390/photonics13030232

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Simulations and Experiments on Activation of Doped Silicon Wafers Based on Dual Beam of 785 nm Semiconductor Laser and 10.6 μm CO₂ Laser

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