Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer
Abstract
1. Introduction
2. Device Structures and Simulation Parameters
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
- Liu, B.; Chen, D.; Lu, H.; Tao, T.; Zhuang, Z.; Shao, Z.; Xu, W.; Ge, H.; Zhi, T.; Ren, F.; et al. Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors. Adv. Mater. 2020, 32, 1904354. [Google Scholar] [CrossRef] [PubMed]
- Liu, Z.; Nong, M.; Lu, Y.; Cao, H.; Yuvaraja, S.; Xiao, N.; Alnakhli, Z.; Aguileta Vázquez, R.R.; Li, X. Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy. Opt. Lett. 2022, 47, 6229–6232. [Google Scholar] [CrossRef] [PubMed]
- Zhou, S.; Zhao, X.; Du, P.; Zhang, Z.; Liu, X.; Liu, S.; Guo, L.J. Application of patterned sapphire substrate for III-nitride light-emitting diodes. Nanoscale 2022, 14, 4887–4907. [Google Scholar] [CrossRef]
- Fan, B.; Zhao, X.; Zhang, J.; Sun, Y.; Yang, H.; Guo, L.J.; Zhou, S. Monolithically Integrating III-Nitride Quantum Structure for Full-Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth. Laser Photonics Rev. 2023, 17, 2200455. [Google Scholar] [CrossRef]
- Hu, H.; Tang, B.; Wan, H.; Sun, H.; Zhou, S.; Dai, J.; Chen, C.; Liu, S.; Guo, L.J. Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array. Nano Energy 2020, 69, 104427. [Google Scholar] [CrossRef]
- Zhou, S.; Liu, X.; Yan, H.; Chen, Z.; Liu, Y.; Liu, S. Highly efficient GaN-based high-power flip-chip light-emitting diodes. Opt. Express 2019, 27, A669–A692. [Google Scholar] [CrossRef] [PubMed]
- Zhang, S.; Liu, W.; Zhang, J.; Zhao, H.; Liu, Z.; Hu, Z. Influence of well position on the electroluminescence characteristics of InGaN/GaN single quantum well red light-emitting diodes. J. Lumin. 2022, 250, 119090. [Google Scholar] [CrossRef]
- Li, P.; Li, H.; Wong, M.S.; Chan, P.; Yang, Y.; Zhang, H.; Iza, M.; Speck, J.S.; Nakamura, S.; Denbaars, S.P. Progress of InGaN-Based Red Micro-Light Emitting Diodes. Crystals 2022, 12, 541. [Google Scholar] [CrossRef]
- Oh, J.T.; Lee, S.Y.; Moon, Y.T.; Moon, J.H.; Park, S.; Hong, K.Y.; Song, K.Y.; Oh, C.; Shim, J.I.; Jeong, H.H.; et al. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures. Opt. Express 2018, 26, 11194–11200. [Google Scholar] [CrossRef]
- Romanov, A.E.; Baker, T.J.; Nakamura, S.; Speck, J.S. Strain-induced polarization in wurtzite III-nitride semipolar layers. J. Appl. Phys. 2006, 100, 023522. [Google Scholar] [CrossRef]
- Pieniak, K.; Trzeciakowski, W.; Muzioł, G.; Kafar, A.; Siekacz, M.; Skierbiszewski, C.; Suski, T. Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs. Opt. Express 2021, 29, 40804–40818. [Google Scholar] [CrossRef]
- Muziol, G.; Hajdel, M.; Siekacz, M.; Turski, H.; Pieniak, K.; Bercha, A.; Trzeciakowski, W.; Kudrawiec, R.; Suski, T.; Skierbiszewski, C. III-nitride optoelectronic devices containing wide quantum wells-unexpectedly efficient light sources. Jpn. J. Appl. Phys. 2021, 61, SA0801. [Google Scholar] [CrossRef]
- Young, N.G.; Farrell, R.M.; Oh, S.; Cantore, M.; Wu, F.; Nakamura, S.; DenBaars, S.P.; Weisbuch, C.; Speck, J.S. Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes. Appl. Phys. Lett. 2016, 108, 061105. [Google Scholar] [CrossRef]
- Alhassan, A.I.; Young, N.G.; Farrell, R.M.; Pynn, C.; Wu, F.; Alyamani, A.Y.; Nakamura, S.; DenBaars, S.P.; Speck, J.S. Development of high performance green c-plane III-nitride light-emitting diodes. Opt. Express 2018, 26, 5591–5601. [Google Scholar] [CrossRef] [PubMed]
- Shen, Y.C.; Mueller, G.O.; Watanabe, S.; Gardner, N.F.; Munkholm, A.; Krames, M.R. Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 2007, 91, 141101. [Google Scholar] [CrossRef]
- Zhang, B.J.; Egawa, T.; Ishikawa, H.; Nishikawa, N.; Jimbo, T.; Umeno, M. InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates. Phys. Status Solidi (A) 2001, 188, 151–154. [Google Scholar] [CrossRef]
- Badcock, T.J.; Ali, M.; Zhu, T.; Pristovsek, M.; Oliver, R.A.; Shields, A.J. Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures. Appl. Phys. Lett. 2016, 109, 151110. [Google Scholar] [CrossRef]
- Wernicke, T.; Schade, L.; Netzel, C.; Rass, J.; Hoffmann, V.; Ploch, S.; Knauer, A.; Weyers, M.; Schwarz, U.; Kneissl, M. Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells. Semicond. Sci. Technol. 2012, 27, 024014. [Google Scholar] [CrossRef]
- Wang, Q.; Yuan, G.; Liu, W.; Zhao, S.; Liu, Z.; Chen, Y.; Wang, J.; Li, J. Semipolar (101)InGaN/GaN red-amber-yellow light-emitting diodes on triangular-striped Si (100) substrate. J. Mater. Sci. 2019, 54, 7780–7788. [Google Scholar] [CrossRef]
- Du, P.; Shi, L.; Liu, S.; Zhou, S. High-performance AlGaN-based deep ultraviolet light-emitting diodes with different types of InAlGaN/AlGaN electron blocking layer. Jpn. J. Appl. Phys. 2021, 60, 092001. [Google Scholar] [CrossRef]
- Lang, J.; Xu, F.J.; Ge, W.K.; Liu, B.Y.; Zhang, N.; Sun, Y.H.; Wang, J.M.; Wang, M.X.; Xie, N.; Fang, X.Z.; et al. Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer. Opt. Express 2019, 27, A1458–A1466. [Google Scholar] [CrossRef] [PubMed]
- Arif, R.A.; Zhao, H.; Ee, Y.K.; Tansu, N. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes. IEEE J. Quantum Electron. 2008, 44, 573–580. [Google Scholar] [CrossRef]
- Arif, R.A.; Ee, Y.-K.; Tansu, N. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Appl. Phys. Lett. 2007, 91, 091110. [Google Scholar] [CrossRef]
- Lv, Z.; Zhao, X.; Sun, Y.; Tao, G.; Du, P.; Zhou, S. Unexpectedly Simultaneous Increase in Wavelength and Output Power of Yellow LEDs Based on Staggered Quantum Wells by TMIn Flux Modulation. Nanomaterials 2022, 12, 3378. [Google Scholar] [CrossRef] [PubMed]
- Zhao, X.; Tang, B.; Gong, L.; Bai, J.; Ping, J.; Zhou, S. Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes. Appl. Phys. Lett. 2021, 118, 182102. [Google Scholar] [CrossRef]
- Melanson, B.; Liu, C.; Zhang, J. Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers. IEEE Photonics J. 2021, 13, 1–10. [Google Scholar] [CrossRef]
- Iida, D.; Zhuang, Z.; Kirilenko, P.; Velazquez-Rizo, M.; Najmi, M.A.; Ohkawa, K. 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress. Appl. Phys. Lett. 2020, 116, 162101. [Google Scholar] [CrossRef]
- Usman, M.; Mushtaq, U.; Zheng, D.-G.; Han, D.-P.; Rafiq, M.; Muhammad, N. Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode. Appl. Sci. 2019, 9, 77. [Google Scholar] [CrossRef]
- Usman, M.; Munsif, M.; Anwar, A.-R.; Mushtaq, U.; Imtiaz, W.A.; Han, D.-P.; Muhammad, N. Zigzag-shaped quantum well engineering of green light-emitting diode. Superlattices Microstruct. 2019, 132, 106164. [Google Scholar] [CrossRef]
- Zhou, S.; Wan, Z.; Lei, Y.; Tang, B.; Tao, G.; Du, P.; Zhao, X. InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes. Opt. Lett. 2022, 47, 1291–1294. [Google Scholar] [CrossRef]
- Ohashi, T.; Kouno, T.; Kawai, M.; Kikuchi, A.; Kishino, K. Growth and characterization of InGaN double heterostructures for optical devices at 1.5-1.7 mm communication wavelengths. Phys. Status Solidi (A) 2004, 201, 2850–2854. [Google Scholar] [CrossRef]
- Naoi, H.; Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Miyajima, T.; Na, H.; Nanishi, A.Y. Growth and properties of InN, InGaN, and InN/InGaN quantum wells. Phys. Status Solidi (A) 2006, 203, 93–101. [Google Scholar] [CrossRef]
- Kurouchi, M.; Naoi, H.; Araki, T.; Miyajima, T.; Nanishi, Y. Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy. Jpn. J. Appl. Phys. 2005, 44, L230. [Google Scholar] [CrossRef]
- Che, S.-B.; Mizuno, T.; Wang, X.; Ishitani, Y.; Yoshikawa, A. Fabrication and properties of coherent-structure In-polarity InN/In0.7Ga0.3N multiquantum wells emitting at around 1.55 μm. J. Appl. Phys. 2007, 102, 083539. [Google Scholar] [CrossRef]
- Yoshikawa, A.; Che, S.B.; Yamaguchi, W.; Saito, H.; Wang, X.Q.; Ishitani, Y.; Hwang, E.S. Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix. Appl. Phys. Lett. 2007, 90, 073101. [Google Scholar] [CrossRef]
- Ozaki, T.; Funato, M.; Kawakami, Y. Red-emitting InxGa1-xN/InyGa1-yN quantum wells grown on lattice-matched InyGa1-yN/ScAlMgO4 (0001) templates. Appl. Phys. Express 2019, 12, 011007. [Google Scholar] [CrossRef]
- Du, P.; Shi, L.; Liu, S.; Zhou, S. Polarization-doped quantum wells with graded Al-composition for highly efficient deep ultraviolet light-emitting diodes. Micro Nanostruct. 2022, 163, 107150. [Google Scholar] [CrossRef]
- Che, S.; Yuki, A.; Watanabe, H.; Ishitani, Y.; Yoshikawa, A. Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region. Appl. Phys. Express 2009, 2, 021001. [Google Scholar] [CrossRef]
- Mymrin, V.F.; Bulashevich, K.A.; Podolskaya, N.I.; Zhmakin, I.A.; Karpov, S.Y.; Makarov, Y.N. Modelling study of MQW LED operation. Phys. Status Solidi (C) 2005, 2, 2928–2931. [Google Scholar] [CrossRef]
- Kim, S.J.; Kim, T.G. Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths. Phys. Status Solidi (A) 2014, 211, 656–660. [Google Scholar] [CrossRef]
- Mondal, R.K.; Chatterjee, V.; Singh, S.; Islam, S.M.; Pal, S. Optimization of structure parameters for highly efficient AlGaN based deep ultraviolet light emitting diodes. Superlattices Microstruct. 2017, 112, 339–352. [Google Scholar] [CrossRef]
- Muziol, G.; Turski, H.; Siekacz, M.; Szkudlarek, K.; Janicki, L.; Baranowski, M.; Zolud, S.; Kudrawiec, R.; Suski, T.; Skierbiszewski, C. Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices. ACS Photonics 2019, 6, 1963–1971. [Google Scholar] [CrossRef]
Distance (nm) | 0 | 0.5 | 1.0 | 1.5 | 2.0 |
Ee1 (eV) | −0.725 | −0.879 | −1.001 | −1.083 | −1.052 |
Ehh1 (eV) | −2.674 | −2.725 | −2.838 | −2.947 | −2.971 |
Ee1 − Ehh1 (eV) | 1.949 | 1.846 | 1.837 | 1.864 | 1.919 |
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Zhou, Q.; Du, P.; Shi, L.; Sun, Y.; Zhou, S. Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer. Photonics 2023, 10, 647. https://doi.org/10.3390/photonics10060647
Zhou Q, Du P, Shi L, Sun Y, Zhou S. Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer. Photonics. 2023; 10(6):647. https://doi.org/10.3390/photonics10060647
Chicago/Turabian StyleZhou, Qianxi, Peng Du, Lang Shi, Yuechang Sun, and Shengjun Zhou. 2023. "Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer" Photonics 10, no. 6: 647. https://doi.org/10.3390/photonics10060647
APA StyleZhou, Q., Du, P., Shi, L., Sun, Y., & Zhou, S. (2023). Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer. Photonics, 10(6), 647. https://doi.org/10.3390/photonics10060647