Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing

Zhou, Sikun; Yang, Junjie; Wang, Sha; Wang, Shutong; Deng, Guoliang; Zhou, Shouhuan

doi:10.3390/photonics10040479

Open AccessCommunication

Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing

by

Sikun Zhou

,

Junjie Yang

,

Sha Wang

,

Shutong Wang

,

Guoliang Deng

^* and

Shouhuan Zhou

College of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China

^*

Author to whom correspondence should be addressed.

Photonics 2023, 10(4), 479; https://doi.org/10.3390/photonics10040479

Submission received: 24 March 2023 / Revised: 17 April 2023 / Accepted: 19 April 2023 / Published: 21 April 2023

(This article belongs to the Special Issue Femtosecond Laser-Induced Microfabrication)

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Abstract

In this work, we fabricated the antireflection microstructures (ARMs) on ZnSe surfaces using a femtosecond Bessel direct laser writing in burst mode. The morphology and transmittance performance of ARMs with different single-pulse energies (from 200 nJ to 500 nJ), different burst modes (burst 1, 3, and 5 modes), different periods (from 3 μm to 6 μm), and different arrangements were investigated. The results revealed that tetragonally arranged ARMs fabricated by 500 nJ of single-pulse energy, the burst 3 mode, and a period of 3 μm show the best transmittance performance. The average transmittance of the ARMs was about 17.13% higher than that of bulk ZnSe in the range of 8–12 μm, and the highest transmittance of 81.75% (an improvement of 18.63% on one side of the ZnSe) was achieved at 12.36 μm. This process makes it possible to enhance ARMs’ transmittance in the infrared wavelength range by using direct laser writing in burst mode.

Keywords: femtosecond laser; antireflection microstructure; burst mode; Bessel beam

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MDPI and ACS Style

Zhou, S.; Yang, J.; Wang, S.; Wang, S.; Deng, G.; Zhou, S. Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing. Photonics 2023, 10, 479. https://doi.org/10.3390/photonics10040479

AMA Style

Zhou S, Yang J, Wang S, Wang S, Deng G, Zhou S. Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing. Photonics. 2023; 10(4):479. https://doi.org/10.3390/photonics10040479

Chicago/Turabian Style

Zhou, Sikun, Junjie Yang, Sha Wang, Shutong Wang, Guoliang Deng, and Shouhuan Zhou. 2023. "Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing" Photonics 10, no. 4: 479. https://doi.org/10.3390/photonics10040479

APA Style

Zhou, S., Yang, J., Wang, S., Wang, S., Deng, G., & Zhou, S. (2023). Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing. Photonics, 10(4), 479. https://doi.org/10.3390/photonics10040479

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Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing

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