Wafer Eccentricity Deviation Measurement Method Based on Line-Scanning Chromatic Confocal 3D Profiler

Qu, Dingjun; Zhou, Zuoda; Li, Zhiwei; Ding, Ruizhe; Jin, Wei; Luo, Haiyan; Xiong, Wei

doi:10.3390/photonics10040398

Open AccessArticle

Wafer Eccentricity Deviation Measurement Method Based on Line-Scanning Chromatic Confocal 3D Profiler

by

Dingjun Qu

^1,2,3

,

Zuoda Zhou

^1,2,3,

Zhiwei Li

^1,3,

Ruizhe Ding

^1,2,3,

Wei Jin

^1,3,

Haiyan Luo

^1,2,3,* and

Wei Xiong

^1,2,3,*

¹

Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China

²

Science Island Branch, Graduate School of University of Science and Technology of China, Hefei 230026, China

³

Key Laboratory of Optical Calibration and Characterization of Chinese Academy of Sciences, Hefei 230031, China

^*

Authors to whom correspondence should be addressed.

Photonics 2023, 10(4), 398; https://doi.org/10.3390/photonics10040398

Submission received: 15 February 2023 / Revised: 17 March 2023 / Accepted: 30 March 2023 / Published: 3 April 2023

(This article belongs to the Special Issue Recent Advances in Optical Metrology)

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Abstract

The wafer eccentricity deviation caused by misalignment between the center of the wafer and rotary table will lead to edge image distortion and quality degradation of the defect signals during automated inspection. However, wafer end jump and edge topography change will bring great challenges to the accurate measurement of micrometer deviations. A new wafer eccentricity deviation measurement method based on line-scanning chromatic confocal sensors (LSCCSs) is proposed. Firstly, the LSCCS with Z-axis submicron resolution used in the experiment acquires the 3D profile height of the wafer edge as the turntable rotates, and the edge distance is calculated at each rotation angle. Secondly, a robust Fourier-LAR fitting method is used to fit edge distance serial to reduce sensitivity to outliers. Finally, the wafer eccentricity deviation that is equal to the wafer center coordinate can be calculated using the wafer eccentricity deviation model. In the simulated experiment, the results show that the eccentricity deviation measurement accuracy was insensitivity to noise and reached the micron level. Additionally, the measurement uncertainty of eccentricity deviation coordinate

(X_{w}, Y_{w})

was (0.53 µm, 1.4 µm) in the actual data of the 12-inch wafers.

Keywords: wafer eccentricity deviation; automated inspection; chromatic confocal; 3D profiler measurement; dark-field scatter

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MDPI and ACS Style

Qu, D.; Zhou, Z.; Li, Z.; Ding, R.; Jin, W.; Luo, H.; Xiong, W. Wafer Eccentricity Deviation Measurement Method Based on Line-Scanning Chromatic Confocal 3D Profiler. Photonics 2023, 10, 398. https://doi.org/10.3390/photonics10040398

AMA Style

Qu D, Zhou Z, Li Z, Ding R, Jin W, Luo H, Xiong W. Wafer Eccentricity Deviation Measurement Method Based on Line-Scanning Chromatic Confocal 3D Profiler. Photonics. 2023; 10(4):398. https://doi.org/10.3390/photonics10040398

Chicago/Turabian Style

Qu, Dingjun, Zuoda Zhou, Zhiwei Li, Ruizhe Ding, Wei Jin, Haiyan Luo, and Wei Xiong. 2023. "Wafer Eccentricity Deviation Measurement Method Based on Line-Scanning Chromatic Confocal 3D Profiler" Photonics 10, no. 4: 398. https://doi.org/10.3390/photonics10040398

APA Style

Qu, D., Zhou, Z., Li, Z., Ding, R., Jin, W., Luo, H., & Xiong, W. (2023). Wafer Eccentricity Deviation Measurement Method Based on Line-Scanning Chromatic Confocal 3D Profiler. Photonics, 10(4), 398. https://doi.org/10.3390/photonics10040398

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Wafer Eccentricity Deviation Measurement Method Based on Line-Scanning Chromatic Confocal 3D Profiler

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