Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor
Abstract
:1. Introduction
2. Materials and Methods
Memristor Fabrication Process
3. Results and Discussion
3.1. Material Characteristics
3.1.1. TEM Image of Pristine Memristor
3.1.2. XPS Analysis
3.1.3. XRD Pattern and AFM Image
3.2. Bipolar Resistive Switching Characteristics
3.2.1. Current-Voltage Switching and Transport Mechanism
3.2.2. Evidence of Cu Migration
3.2.3. Device Performance and Low Current Operation
3.3. CRS Phenomena
3.3.1. I–V and Transport Characteristics
3.3.2. Memristor Mechanism
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Chiu, C.-F.; Ginnaram, S.; Senapati, A.; Chen, Y.-P.; Maikap, S. Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor. Electronics 2020, 9, 1466. https://doi.org/10.3390/electronics9091466
Chiu C-F, Ginnaram S, Senapati A, Chen Y-P, Maikap S. Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor. Electronics. 2020; 9(9):1466. https://doi.org/10.3390/electronics9091466
Chicago/Turabian StyleChiu, Chiao-Fan, Sreekanth Ginnaram, Asim Senapati, Yi-Pin Chen, and Siddheswar Maikap. 2020. "Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor" Electronics 9, no. 9: 1466. https://doi.org/10.3390/electronics9091466