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Article

Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates

1
Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia
2
V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences, Moscow 117105, Russia
*
Authors to whom correspondence should be addressed.
Electronics 2020, 9(3), 495; https://doi.org/10.3390/electronics9030495
Received: 28 February 2020 / Revised: 12 March 2020 / Accepted: 14 March 2020 / Published: 17 March 2020
(This article belongs to the Special Issue Terahertz Technology and Its Applications)
The terahertz wave generation by spiral photoconductive antennas fabricated on low-temperature In0.5Ga0.5As films and In0.5Ga0.5As/In0.5Al0.5As superlattices is studied by the terahertz time-domain spectroscopy method. The structures were obtained by molecular beam epitaxy on GaAs and InP substrates with surface crystallographic orientations of (100) and (111)A. The pump-probe measurements in the transmission geometry and Hall effect measurements are used to characterize the properties of LT-InGaAs and LT-InGaAs/InAlAs structures. It is found that the terahertz radiation power is almost four times higher for LT-InGaAs samples with the (111)A substrate orientation as compared to (100). Adding of LT-InAlAs layers into the structure with (111)A substrate orientation results in two orders of magnitude increase of the structure resistivity. The possibility of creating LT-InGaAs/InAlAs-based photoconductive antennas with high dark resistance without compensating Be doping is demonstrated. View Full-Text
Keywords: terahertz wave generation; InGaAs; molecular beam epitaxy; time-domain spectroscopy; photoconductive antenna terahertz wave generation; InGaAs; molecular beam epitaxy; time-domain spectroscopy; photoconductive antenna
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MDPI and ACS Style

Kuznetsov, K.; Klochkov, A.; Leontyev, A.; Klimov, E.; Pushkarev, S.; Galiev, G.; Kitaeva, G. Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates. Electronics 2020, 9, 495. https://doi.org/10.3390/electronics9030495

AMA Style

Kuznetsov K, Klochkov A, Leontyev A, Klimov E, Pushkarev S, Galiev G, Kitaeva G. Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates. Electronics. 2020; 9(3):495. https://doi.org/10.3390/electronics9030495

Chicago/Turabian Style

Kuznetsov, Kirill, Aleksey Klochkov, Andrey Leontyev, Evgeniy Klimov, Sergey Pushkarev, Galib Galiev, and Galiya Kitaeva. 2020. "Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates" Electronics 9, no. 3: 495. https://doi.org/10.3390/electronics9030495

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