Next Article in Journal
A Data Secured Communication System Design Procedure with a Chaotic Carrier and Synergetic Observer
Previous Article in Journal
Low-Power CMOS Complex Bandpass Filter with Passband Flatness Tunability
Previous Article in Special Issue
Design and Measurement of a 0.67 THz Biased Sub-Harmonic Mixer
Open AccessArticle

Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates

1
Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia
2
V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences, Moscow 117105, Russia
*
Authors to whom correspondence should be addressed.
Electronics 2020, 9(3), 495; https://doi.org/10.3390/electronics9030495
Received: 28 February 2020 / Revised: 12 March 2020 / Accepted: 14 March 2020 / Published: 17 March 2020
(This article belongs to the Special Issue Terahertz Technology and Its Applications)
The terahertz wave generation by spiral photoconductive antennas fabricated on low-temperature In0.5Ga0.5As films and In0.5Ga0.5As/In0.5Al0.5As superlattices is studied by the terahertz time-domain spectroscopy method. The structures were obtained by molecular beam epitaxy on GaAs and InP substrates with surface crystallographic orientations of (100) and (111)A. The pump-probe measurements in the transmission geometry and Hall effect measurements are used to characterize the properties of LT-InGaAs and LT-InGaAs/InAlAs structures. It is found that the terahertz radiation power is almost four times higher for LT-InGaAs samples with the (111)A substrate orientation as compared to (100). Adding of LT-InAlAs layers into the structure with (111)A substrate orientation results in two orders of magnitude increase of the structure resistivity. The possibility of creating LT-InGaAs/InAlAs-based photoconductive antennas with high dark resistance without compensating Be doping is demonstrated. View Full-Text
Keywords: terahertz wave generation; InGaAs; molecular beam epitaxy; time-domain spectroscopy; photoconductive antenna terahertz wave generation; InGaAs; molecular beam epitaxy; time-domain spectroscopy; photoconductive antenna
Show Figures

Figure 1

MDPI and ACS Style

Kuznetsov, K.; Klochkov, A.; Leontyev, A.; Klimov, E.; Pushkarev, S.; Galiev, G.; Kitaeva, G. Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates. Electronics 2020, 9, 495.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop