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Open AccessEditor’s ChoiceArticle

A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors

1
Department of Information Engineering, Marche Polytechnic University, 60131 Ancona, Italy
2
Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research & Technology Hellas (FORTH), 70013 Crete, Greece
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Electronics 2020, 9(12), 2199; https://doi.org/10.3390/electronics9122199
Received: 26 October 2020 / Revised: 9 December 2020 / Accepted: 16 December 2020 / Published: 20 December 2020
(This article belongs to the Section Microelectronics and Optoelectronics)
Carbon nanotubes field-effect transistors (CNTFETs) have been recently studied with great interest due to the intriguing properties of the material that, in turn, lead to remarkable properties of the charge transport of the device channel. Downstream of the full-wave simulations, the construction of equivalent device models becomes the basic step for the advanced design of high-performance CNTFET-based nanoelectronics circuits and systems. In this contribution, we introduce a strategy for deriving a compact model for a CNTFET that is based on the full-wave simulation of the 3D geometry by using the finite element method, followed by the derivation of a compact circuit model and extraction of equivalent parameters. We show examples of CNTFET simulations and extract from them the fitting parameters of the model. The aim is to achieve a fully functional description in Verilog-A language and create a model library for the SPICE-like simulator environment, in order to be used by IC designers. View Full-Text
Keywords: carbon nanotubes; field-effect transistors; finite element method; parameter extraction; device modeling; circuit; SPICE carbon nanotubes; field-effect transistors; finite element method; parameter extraction; device modeling; circuit; SPICE
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MDPI and ACS Style

Falaschetti, L.; Mencarelli, D.; Pelagalli, N.; Crippa, P.; Biagetti, G.; Turchetti, C.; Deligeorgis, G.; Pierantoni, L. A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors. Electronics 2020, 9, 2199. https://doi.org/10.3390/electronics9122199

AMA Style

Falaschetti L, Mencarelli D, Pelagalli N, Crippa P, Biagetti G, Turchetti C, Deligeorgis G, Pierantoni L. A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors. Electronics. 2020; 9(12):2199. https://doi.org/10.3390/electronics9122199

Chicago/Turabian Style

Falaschetti, Laura; Mencarelli, Davide; Pelagalli, Nicola; Crippa, Paolo; Biagetti, Giorgio; Turchetti, Claudio; Deligeorgis, George; Pierantoni, Luca. 2020. "A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors" Electronics 9, no. 12: 2199. https://doi.org/10.3390/electronics9122199

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