Next Article in Journal
Effect of Receiver’s Tilted Angle on the Capacity for Underwater Wireless Optical Communication
Next Article in Special Issue
Practical Controller Design of Three-Phase Dual Active Bridge Converter for Low Voltage DC Distribution System
Previous Article in Journal
WIoTED: An IoT-Based Portable Platform to Support the Learning Process Using Wearable Devices
Previous Article in Special Issue
Investigation of Scale Conversion for Inductive Power Transfer in Series-Series Configuration
Open AccessReview

Enhance Reliability of Semiconductor Devices in Power Converters

School of Electrical Engineering, Chung-Ang University, Seoul 06974, Korea
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(12), 2068; https://doi.org/10.3390/electronics9122068
Received: 18 November 2020 / Revised: 2 December 2020 / Accepted: 2 December 2020 / Published: 4 December 2020
(This article belongs to the Special Issue State-of-the-art Power Electronics in Korea)
As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great concern in terms of reliability. Owing to the wide utilization of power semiconductor devices in various power applications, especially insulated gate bipolar transistors (IGBTs), power semiconductor devices have been studied extensively regarding increasing reliability methods. This study comparatively reviews recent advances in the area of reliability research for power semiconductor devices, including condition monitoring (CM), active thermal control (ATC), and remaining useful lifetime (RUL) estimation techniques. Different from previous review studies, this technical review is carried out with the aim of providing a comprehensive overview of the correlation between various enhancing reliability techniques and discussing the corresponding merits and demerits by using 144 related up-to-date papers. The structure and failure mechanism of power semiconductor devices are first investigated. Different failure indicators and recent associated CM techniques are then compared. The ATC approaches following the type of converter systems are further summarized. Furthermore, RUL estimation techniques are surveyed. This paper concludes with summarized challenges for future research opportunities regarding reliability improvement. View Full-Text
Keywords: power semiconductor device; condition monitoring (CM); active thermal control (ATC); remaining useful lifetime (RUL); temperature; reliability power semiconductor device; condition monitoring (CM); active thermal control (ATC); remaining useful lifetime (RUL); temperature; reliability
Show Figures

Figure 1

MDPI and ACS Style

Nguyen, M.H.; Kwak, S. Enhance Reliability of Semiconductor Devices in Power Converters. Electronics 2020, 9, 2068. https://doi.org/10.3390/electronics9122068

AMA Style

Nguyen MH, Kwak S. Enhance Reliability of Semiconductor Devices in Power Converters. Electronics. 2020; 9(12):2068. https://doi.org/10.3390/electronics9122068

Chicago/Turabian Style

Nguyen, Minh H.; Kwak, Sangshin. 2020. "Enhance Reliability of Semiconductor Devices in Power Converters" Electronics 9, no. 12: 2068. https://doi.org/10.3390/electronics9122068

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop